Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN

Open Physics ◽  
2008 ◽  
Vol 6 (2) ◽  
Author(s):  
Limin Zhang ◽  
Xiaodong Zhang ◽  
Wei You ◽  
Zhen Yang ◽  
WenXiu Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Dose Dependence ◽  
Band Edge ◽  
Near Band Edge ◽  
Yellow Luminescence ◽  
C And N ◽  
Intensity Ratios ◽  
The One ◽  
Ion Implanted

AbstractThe effects of Si, O, C and N ion implantation with different implantation doses on yellow luminescence (YL) of GaN have been investigated. The as-grown GaN samples used in the work were of unintentional doped n-type, and the photoluminescence (PL) spectra of samples had strong YL. The experimental results showed that YL of ion implanted samples exhibited marked reductions compared to samples with no implantation, while the near band edge (NBE) emissions were reduced to a lesser extent. The deep-level centers associated with YL may be produced in GaN films by O and C ion implantation, and identities of these deep-level centers were analyzed. It was also found that the dose dependence of YL was analogous with the one of the intensity ratios of YL to the near band edge (NBE) emission (I YL/I NBE) for ion implanted samples. The possible reason for this comparability has been proposed.

EFFECTS OF Ge DOPING THROUGH ION IMPLANTATION ON THE STRUCTURAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY SOL-GEL TECHNIQUE

2007 ◽  
Vol 21 (31) ◽  
pp. 5257-5263 ◽  
Author(s):  
S. W. XUE ◽  
X. T. ZU ◽  
X. XIANG ◽  
M. Y. CHEN ◽  
W. G. ZHENG
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Implantation ◽  
Deep Level ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Near Band Edge ◽  
Structural And Optical Properties

ZnO thin films were first prepared by the sol–gel process, and then Ge ions were implanted into the ZnO films. The effects of ion implantation on the structural and optical properties of the ZnO films were investigated by X-ray diffraction, photoluminescence (PL), and optical transmittance measurements. Measurement results showed that the intensity of the (002) diffraction peak was decreased and the full width at half maximum was narrowed. PL emission was greatly extinguished after Ge ion implantation. Both the near band edge (NBE) excitonic UV emission at 391 nm and the defect related deep level emission centered at 470 nm in the visible region were decreased after Ge ion implantation. NBE peak and the absorption edge were observed to have a blueshift toward higher energy.

Influence of C, N and O Ion-Implantation on Yellow Luminescence

1998 ◽  
Vol 512 ◽  
Author(s):  
R. Zhang ◽  
L. Zhang ◽  
N. Perkins ◽  
T. F. Kuech
Keyword(s):  
Ion Implantation ◽  
Vapor Phase ◽  
Variable Temperature ◽  
Significant Loss ◽  
Vapor Phase Epitaxy ◽  
Yellow Luminescence ◽  
Measurement Temperature ◽  
Peak Energy ◽  
Integrated Intensity ◽  
Ion Implanted

ABSTRACTInfluence of C, N and O ion-implantation on the yellow luminescence (YL) of halide vapor phase epitaxy (HVPE) and metal-organic vapor phase epitaxy (MOVPE) grown GaN has been studied by photoluminescence (PL) spectroscopy. For the HVPE-grown samples, only C implantation produces a significant enhancement of YL while its corresponding overall PL integrated intensity is only ˜72% of its original value. Implantation of O or N do not appreciably change the YL but decrease the BE integrated intensities by a factor of ten. The full-width-halfmaximum (FWHM) of the BE band expanded to about 1.4 × of the original value in all three cases. These results indicate that one source of the YL is strongly correlated to incorporation of C into the GaN film. The C-induced defect complexes in GaN are optically active while O or N does not lead to any new luminescence features. The variable-temperature PL measurements on the C-implanted HVPE-grown GaN reveal that the FWHM of the YL band increases linearly and the peak energy of the YL changes very little with the increasing measurement temperature, while the integrated intensity of the YL band decreases monotonically. This trend of the YL FWHM and peak energy with the measurement temperature can be explained by a two-channel transition model. For MOVPE-grown GaN films., all ion-implanted samples exhibit a significant loss of both the YL and overall integrated PL intensity. Residual C contamination in the MOVPE samples could be large compared to the additional ion-implanted carbon leading to a reduced impact of the ion-implanted carbon.

Ion Species Dependence of Electrical Characteristics in Ion Implanted GaAs

1992 ◽  
Vol 279 ◽  
Author(s):  
L. He ◽  
W. A. Anderson
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Surface Damage ◽  
Electrical Performance ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTFluorine, boron and oxygen implantation in GaAs has been investigated by electrical characterization using current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Ion implantation at lOOkeV energy was conducted with doses of 1011 and 1012/cm2. Carrier compensation was observed in each implanted sample. The compensation effect strongly depended on ion implantation conditions and ion species. Severe surface damage was also induced which degrades electrical performance. Rapid thermal annealing (RTA) treatment showed the heavier ion implanted samples to be more thermally stable. Defect levels for each implanted species were compared and identified.

Selective optical compensation effect of two new near‐band‐edge emissions in simultaneously acceptor (Zn+) and donor (Se+) ion‐implanted GaAs

1986 ◽  
Vol 60 (1) ◽  
pp. 442-444 ◽  
Author(s):  
Yunosuke Makita ◽  
Toshio Nomura ◽  
Kazuhiro Kudo ◽  
Katsuhiro Irie ◽  
Nobukazu Ohnishi ◽  
...  
Keyword(s):  
Compensation Effect ◽  
Band Edge ◽  
Near Band Edge ◽  
Ion Implanted
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