Nanoscale Characterization of Active Doping Concentration in Boron-Doped Individual Si Nanocrystals

AbstractMobilities in Si1-x-yGex Cy layers were measured using mesa etched Van der Pauw structures for alloy layers with 0 < x < 0.30 and 0 < y < 0.02 and doping levels of 1015 < N < 1018 cm-3. Mobilities in Si1-x-yGex Cy layers with x = 0.27 were found to approach Si mobilities for both μn and μp.While electron mobilities in phosphorous-doped SiGeC decrease with doping concentration, hole mobilities in boron-doped SiGeC increase with doping level, indicating ionized impurity scattering is not dominant for μp over the temperature range studied.

Download Full-text

Characterization of Heavily Boron-Doped a-Si:H Films Deposited at Low Substrate Temperatures

MRS Proceedings ◽

10.1557/proc-95-565 ◽

1987 ◽

Vol 95 ◽

Author(s):

Jin Jang ◽

Sung Chul Kim ◽

Dae Bong Lee ◽

Choochon Lee

Keyword(s):

Gas Phase ◽

Doping Concentration ◽

Electrical And Optical Properties ◽

Optical Gap ◽

Boron Doped ◽

Hydrogenated Amorphous ◽

Substrate Temperatures ◽

Absorption Tail ◽

Film Change

AbstractThe electrical and optical properties of heavily boron-doped hydrogenated amorphous silicon (a-Si:H) films deposited at 100°C with a gas phase doping concentration between B2H6/SiH4=0.001 and 0.1 have been investigated. The absorption edge exhibits the characteristic Urbach form and the width of exponential absorption tail, Eo, increases with increasing doping concentration. The optical gap has a linear relationship with the Eo and it is expected to be 2.20 eV when the Eo is zero. Thus, the disorder determines the optical gap directly whether the sample is doped or undoped, the hydrogen and boron in the film change the disorder. The conversion efficiency of n-i-p cell is improved by 15% if the p-layer is deposited at 100°C after preparing the n- and i-layers ∼250°C.

Download Full-text

Spectroscopic Characterization of Boron Doped Tetrahedral Amorphous Carbon

Journal of Inorganic Materials ◽

10.3724/sp.j.1077.2008.00180 ◽

2008 ◽

Vol 23 (1) ◽

pp. 180-184 ◽

Cited By ~ 1

Author(s):

Hua-Yu ZHANG

Keyword(s):

Amorphous Carbon ◽

Spectroscopic Characterization ◽

Tetrahedral Amorphous Carbon ◽

Boron Doped

Download Full-text

Preparation and characterization of boron-doped corn straw biochar: Fe (Ⅱ) removal equilibrium and kinetics

Journal of Environmental Sciences ◽

10.1016/j.jes.2021.01.001 ◽

2021 ◽

Vol 106 ◽

pp. 116-123

Author(s):

Long Sui ◽

Chunyu Tang ◽

Qing Du ◽

Ying Zhao ◽

Kui Cheng ◽

...

Keyword(s):

Corn Straw ◽

Boron Doped ◽

Equilibrium And Kinetics

Download Full-text

Digital light processing in a hybrid atomic force microscope: In Situ, nanoscale characterization of the printing process

Additive Manufacturing ◽

10.1016/j.addma.2020.101744 ◽

2021 ◽

Vol 38 ◽

pp. 101744

Author(s):

Callie I. Higgins ◽

Tobin E. Brown ◽

Jason P. Killgore

Keyword(s):

Atomic Force Microscope ◽

Digital Light Processing ◽

Printing Process ◽

Atomic Force ◽

Nanoscale Characterization

Download Full-text

Nanoscale characterization of the site‐specific degradation of electric double‐layer capacitor using scanning electrochemical cell microscopy

Electrochemical Science Advances ◽

10.1002/elsa.202100053 ◽

2021 ◽

Author(s):

Yusuke Kawabe ◽

Yosuke Miyakoshi ◽

Rui Tang ◽

Takeshi Fukuma ◽

Hirotomo Nishihara ◽

...

Keyword(s):

Double Layer ◽

Electric Double Layer ◽

Electrochemical Cell ◽

Electric Double Layer Capacitor ◽

Site Specific ◽

Double Layer Capacitor ◽

Nanoscale Characterization ◽

Specific Degradation ◽

Cell Microscopy

Download Full-text

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

MRS Proceedings ◽

10.1557/proc-742-k1.1 ◽

2002 ◽

Vol 742 ◽

Cited By ~ 1

Author(s):

T. Kimoto ◽

K. Hashimoto ◽

K. Fujihira ◽

K. Danno ◽

S. Nakamura ◽

...

Keyword(s):

Epitaxial Growth ◽

Schottky Barrier ◽

Breakdown Voltage ◽

Doping Concentration ◽

Schottky Barrier Diodes ◽

Homoepitaxial Growth ◽

Nitrogen Incorporation ◽

Impurity Doping ◽

Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

Download Full-text