The Behavior of Ion-Implanted Hydrogen in Gallium Nitride

1998 ◽  
Vol 537 ◽  
Author(s):  
S. M. Myers ◽  
T.J. Headley ◽  
C.R. Hills ◽  
J. Han ◽  
G.A. Petersen ◽  
...  
Keyword(s):  
Bound States ◽  
Bubble Formation ◽  
Extended Defects ◽  
Wurtzite Phase ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Formation And Evolution ◽  
Ion Implanted

AbstractHydrogen was ion-implanted into wurtzite-phase GaN, and its transport, bound states, and microstructural effects during annealing up to 980°C were investigated by nuclear-reaction profiling, ion-channeling analysis, transmission electron microscopy, and infrared (IR) vibrational spectroscopy. At implanted concentrations vl at.%, faceted H 2 bubbles formed, enabling identification of energetically preferred surfaces, examination of passivating N-H states on these surfaces, and determination of the diffusivity-solubility product of the H. Additionally, the formation and evolution of point and extended defects arising from implantation and bubble formation were characterized. At implanted H concentrations ^0.1 at.%, bubble formation was not observed, and ion-channeling analysis indicated a defect-related H site located within the [0001] channel.

scholarly journals The Behavior of Ion-Implanted Hydrogen in Gallium Nitride

1999 ◽  
Vol 4 (S1) ◽  
pp. 532-541 ◽  
Author(s):  
S. M. Myers ◽  
T.J. Headley ◽  
C.R. Hills ◽  
J. Han ◽  
G.A. Petersen ◽  
...  
Keyword(s):  
Bound States ◽  
Bubble Formation ◽  
Extended Defects ◽  
Wurtzite Phase ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Formation And Evolution ◽  
Ion Implanted

Hydrogen was ion-implanted into wurtzite-phase GaN, and its transport, bound states, and microstructural effects during annealing up to 980°C were investigated by nuclear-reaction profiling, ion-channeling analysis, transmission electron microscopy, and infrared (IR) vibrational spectroscopy. At implanted concentrations ∧1 at.%, faceted H2 bubbles formed, enabling identification of energetically preferred surfaces, examination of passivating N-H states on these surfaces, and determination of the diffusivity-solubility product of the H. Additionally, the formation and evolution of point and extended defects arising from implantation and bubble formation were characterized. At implanted H concentrations ∧0.1 at.%, bubble formation was not observed, and ion-channeling analysis indicated a defect-related H site located within the [0001] channel.

Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 275-284 ◽  
Author(s):  
Michael Seibt ◽  
Philipp Saring ◽  
Philipp Hahne ◽  
Linda Stolze ◽  
M.A. Falkenberg ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Extended Defects ◽  
Metal Impurity ◽  
Transmission Electron ◽  
Electron Beam Induced Current

This contribution summarizes recent efforts to apply transmission electron microscopy (TEM) techniques to recombination-active extended defects present in a low density. In order to locate individual defects, electron beam induced current (EBIC) is applied in situ in a focused ion beam (FIB) machine combined with a scanning electron microscope. Using this approach defect densities down to about 10cm-2 are accessible while a target accuracy of better than 50nm is achieved. First applications described here include metal impurity related defects in multicrystalline silicon, recombination and charge collection at NiSi2 platelets, internal gettering of copper by NiSi2 precipitates and site-determination of copper atoms in NiSi2.

Low Temperature Dopant Activation Using Variable Frequency Microwave Annealing

2010 ◽  
Vol 1245 ◽  
Author(s):  
Terry L. Alford ◽  
Karthik Sivaramakrishnan ◽  
Anil Indluru ◽  
Iftikhar Ahmad ◽  
Bob Hubbard ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Effective Means ◽  
Variable Frequency ◽  
Dopant Activation ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Limited Diffusion ◽  
Ion Implanted

AbstractVariable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.

BIC Formation and Boron Diffusion in Relaxed Si0.8Ge0.2

2004 ◽  
Vol 810 ◽  
Author(s):  
R. T. Crosby ◽  
L. Radic ◽  
K. S. Jones ◽  
M. E. Law ◽  
P.E. Thompson ◽  
...  
Keyword(s):  
Surface Region ◽  
Extended Defects ◽  
Defect Structures ◽  
Boron Diffusion ◽  
Plan View ◽  
Near Surface ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Ion Implanted

ABSTRACTThe relationships between Boron Interstitial Cluster (BIC) evolution and boron diffusion in relaxed Si0.8Ge0.2 have been investigated. Structures were grown by Molecular Beam Epitaxy (MBE) with surface boron wells of variant composition extending 0.25 [.proportional]m into the substrate, as well as boron marker layers positioned 0.50 [.proportional]m below the surface. The boron well concentrations are as follows: 0, 7.5×1018, 1.5×1019, and 5.0×1019 atoms/cm3. The boron marker layers are approximately 3 nm wide and have a peak concentration of 5×1018 atoms/cm3. Samples were ion implanted with 60 keV Si+ at a dose of 1×1014 atoms/cm2 and subsequently annealed at 675°C and 750°C for various times. Plan-view Transmission Electron Microscopy (PTEM) was used to monitor the agglomeration of injected silicon interstitials and the evolution of extended defects in the near surface region. Secondary Ion Mass Spectroscopy (SIMS) concentration profiles facilitated the characterization of boron diffusion behaviors during annealing. Interstitial supersaturation conditions and the resultant defect structures of ion implanted relaxed Si0.8Ge0.2 in both the presence and absence of boron have been characterized.

Coherent Precipitate Formation In Pulsed-Laser And Thermally-Annealed, Ion-Implanted Si.*

1982 ◽  
Vol 13 ◽  
Author(s):  
B. R. Appleton ◽  
J. Narayan ◽  
O. W. Holland ◽  
S. J. Pennycook
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Ion Scattering ◽  
Ion Channeling ◽  
Coherent Precipitate ◽  
Transmission Electron ◽  
Solid Phase Regrowth ◽  
Ion Implanted

AbstractIt Will be shown that under suitable conditions ion implanted impurities in Si can precipitate and grow coherently within the single crystal lattice during recrystallization induced by pulsed laser or thermal annealing. Ion channeling and transmission electron microscopy (Tem) were used to characterize such precipitates in Si implanted with Sb and B and thermally annealed, and in Si implanted with Tl and annealed with a pulsed ruby laser.The orientations of these precipitates were determined from TEM and detailed angular scans using ion scattering channeling.The nucleation and precipitation processes will be discussed in terms of differences in the liquid and solid phase regrowth mechanisms.

Extended Defects in Amorphized and Rapid-Thermally Annealed Silicon

1985 ◽  
Vol 52 ◽  
Author(s):  
D. M. Maher ◽  
R. V. Knoell ◽  
M. B. Ellington ◽  
D. C. Jacobson
Keyword(s):  
Solid Phase ◽  
Analytical Techniques ◽  
Extended Defects ◽  
Final States ◽  
Defect States ◽  
Extended Defect ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Initial States

ABSTRACTThe characterization of microstructures is fundamentally important to investigations of amorphization which is induced by ion implantation and recrystallization which occurs by solid-phase, epitaxial regrowth. In this paper, microstructures of amorphized, partially regrown and fully regrown layers are described in terms of extended-defect states of the material. Initial states (i.e. amorphized) and final states (i.e. solid-phase regrown and then reordered) are defined. Transmission electron microscopy and Rutherford backscattering/ion-channeling are the analytical techniques which are used in the characterization.

A Critical Comparison of the Techniques used to Characterize the Crystallography of an Interface: Pd on mbe “Rown GaAs(100)

1984 ◽  
Vol 37 ◽  
Author(s):  
I. P. Delrue ◽  
M. Wittmer ◽  
T. S. Kuan ◽  
R. Ludeke
Keyword(s):  
Electron Diffraction ◽  
High Energy ◽  
Hexagonal Structure ◽  
Ex Situ ◽  
Epitaxial Relationship ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Pronounced Reduction

AbstractIn situ Reflection High Energy Electron Diffraction and ex-situ Transmission Electron Diffraction and Ion Channeling have been applied to a reacted Pd-GaAs interface and the results obtained are critically compared. The investigation has been done on the stabilized c(2×8) surface obtained by MBE on GaAs(100) substrates. Smooth surface epitaxial growth has been observed by RHEED as soon as a few monolayers of Pd are deposited at a substrate temperature of about 325°C. TEM diffraction studies indicate the presence of an intermetallic hexagonal structure similar to the orthorhombic Pd5Ga2 but with slightly different lattice parameters due to the possible incorporation of As. A less abundant phase was also identified as an hexagonal structure similar to Pd8As2. Ion Channeling indicates pronounced reduction in scattering yield when the [100] axis of the substrate was aligned with the impinging beam, thus supporting the RHEED analysis. The three techniques listed above were found to be useful for the determination of the epitaxial relationship between the identified phases and the substrate.

Oxygen bubble formation and evolution during oxygen implantation and annealing of silicon-on-insulator material

1991 ◽  
Vol 49 ◽  
pp. 864-865
Author(s):  
S J. Krause ◽  
J.D. Lee ◽  
B.L. Chen ◽  
S. Seraphin ◽  
B. Cordts ◽  
...  
Keyword(s):  
Structural Changes ◽  
Bubble Formation ◽  
Silicon Layer ◽  
Surface Region ◽  
Silicon On Insulator ◽  
High Dose ◽  
Oxygen Implantation ◽  
Transmission Electron ◽  
Formation And Evolution ◽  
Radiation Hard

Silicon-on-insulator (SOI) material fabricated by high dose oxygen implantation (SIMOX) is a material increasingly used for higher speed and radiation hard circuits. During implantation a variety of structural changes occur, including the formation of defects, bubbles, precipitates, and the buried oxide layer. The topic of bubble formation and evolution has received only limited study. Sjoreen et al. first reported the presence of spherical, randomly distributed precipitates near the top surface of the silicon layer. El-Ghor et al. further examined these precipitates and proposed that they were cavities filled with oxygen. Maszara confirmed the presence of spheroids filled with oxygen in the silicon top surface region in the 1mA cm-2 as-implanted samples. In this work, transmission electron microscopy (TEM) techniques were used to investigate the effect of implantation conditions on the bubble formation and the effect of subsequent annealing conditions on the evolution of bubbles.

THE DEFECT STRUCTURE OF ION-IMPLANTED AlxGa1−xAs/GaAs SUPERLATFICES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.C. DE COOMAN ◽  
C.B. CARTER ◽  
J. RALSTON ◽  
G.W. WICKS ◽  
L.F. EASTMAN
Keyword(s):  
Electron Microscopy ◽  
Point Defects ◽  
Strain Field ◽  
Defect Structure ◽  
Extended Defects ◽  
Cross Sectional ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Residual Damage ◽  
Ion Implanted

AbstractCross-sectional transmission electron microscopy (XTEM) has been used to study the defect structure and intermixing of ion-implanted and annealed AlxGa1−xAs/GaAs superlattices. The results show clearly that the layer intermixing depends on mass and energy of the implanted species and the annealing conditions. The temperature and duration of annealing determines mainly the amount of residual damage. In addition it was observed that in all cases the point-defects agglomeration was influenced by the strain field present at the layer interfaces; extended defects nucleate preferentially in the GaAs layers.

Depth-Dependent Character of Extended Defects in Ion-Implanted and RTA'd Si

1987 ◽  
Vol 104 ◽  
Author(s):  
Rodney A. Herring
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Energy ◽  
Dislocation Network ◽  
Extended Defects ◽  
Transmission Electron ◽  
Buried Layer ◽  
The Difference ◽  
Defect Character ◽  
Ion Implanted

ABSTRACTThe character of extended defects formed in high-energy S-ion implanted and rapid thermal annealed (RTA'd) Si has been found by transmission electron microscopy (TEM) to be dependent on the depth at which the defects have formed in the ion-implanted regions. Si implanted with 6 MeV S-ions and RTA'd at 1000°C for 10 s showed a buried layer of extended defects with unfaulted loops towards the top and faulted loops towards the bottom. At higher S fluences, all the loops were unfaulted, some loops coalesced to form a dislocation network, and SiS precipitates were formed. At higher RTA temperatures, all the loops were unfaulted. A few possibilities that could explain the difference in defect character will be discussed.

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