Physics-Based Intrinsic Model for AlGaN/GaN HEMTs

1998 ◽  
Vol 537 ◽  
Author(s):  
Shangli Wu ◽  
Richard T. Webster ◽  
A. F. M. Anwar
Keyword(s):  
High Electron Mobility Transistors ◽  
High Electron ◽  
Small Signal ◽  
Transport Parameters ◽  
Ensemble Monte Carlo ◽  
Electron Mobility Transistors ◽  
Signal Parameters ◽  
Self Consistent ◽  
Consistent Solution ◽  
Gan Hemts

AbstractDC and intrinsic small signal parameters are reported for AlGaN/GaN high electron mobility transistors. The calculations are based upon a self-consistent solution of Schrödinger and Poisson's equation to model the quantum well formed in GaN. Transport parameters are obtained from an ensemble Monte Carlo simulation.

scholarly journals Physics-Based Intrinsic Model for AlGaN/GaN HEMTs

1999 ◽  
Vol 4 (S1) ◽  
pp. 775-780 ◽  
Author(s):  
Shangli Wu ◽  
Richard T. Webster ◽  
A. F. M. Anwar
Keyword(s):  
High Electron Mobility Transistors ◽  
High Electron ◽  
Small Signal ◽  
Transport Parameters ◽  
Ensemble Monte Carlo ◽  
Electron Mobility Transistors ◽  
Signal Parameters ◽  
Self Consistent ◽  
Consistent Solution ◽  
Gan Hemts

DC and intrinsic small signal parameters are reported for AlGaN/GaN high electron mobility transistors. The calculations are based upon a self-consistent solution of Schrödinger and Poisson’s equation to model the quantum well formed in GaN. Transport parameters are obtained from an ensemble Monte Carlo simulation.

Symposium Y: Gan and Related Alloys MOCVD AlGaN/GaN HFETs on Si: Challenges and Issues

2003 ◽  
Vol 798 ◽  
Author(s):  
Pradeep Rajagopal ◽  
John C. Roberts ◽  
J. W. Cook ◽  
J. D. Brown ◽  
Edwin L. Piner ◽  
...  
Keyword(s):  
High Frequency ◽  
High Electron Mobility Transistors ◽  
Device Performance ◽  
High Electron ◽  
Small Signal ◽  
Si Substrate ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Mocvd Growth ◽  
Gan Hemts

ABSTRACTAlGaN/GaN based high power, high frequency high electron mobility transistors (HEMTs) have been in development for over a decade. Although much progress has been made, AlGaN/GaN HEMT technology has yet to be commercialized. The choice of silicon as the substrate for the growth of GaN-based epi layers will enable commercialization of AlGaN/GaN based HEMTs, because of its maturity, scalability, reproducibility and economy. One of the epitaxial issues pertaining to the growth of AlGaN/GaN HEMTs on Si is the understanding of parasitic losses that can adversely impact the RF device performance. The effect of the III-N MOCVD process on the resistivity of the Si substrate, and correlations between the Si substrate resistivity and AlGaN/GaN HEMT RF characteristics are presented. Optimization of the MOCVD growth process led to a reduction in parasitic doping of the Si substrate. This resulted in the following improvements: (a) small signal gain increased from 17 to 21dB, (b) the cut-off frequency increased from 7 to 11GHz and (c) the maximum frequency of oscillation improved from 12 to 20GHz. This optimized process will enhance performance of AlGaN/GaN HEMTs at higher frequencies.

scholarly journals Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 400
Author(s):  
Van Cuong Nguyen ◽  
Kwangeun Kim ◽  
Hyungtak Kim
Keyword(s):  
Gas Sensors ◽  
Performance Optimization ◽  
Response Times ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Bias ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Sensing Characteristics

We investigated the sensing characteristics of NO2 gas sensors based on Pd-AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures. In this paper, we demonstrated the optimization of the sensing performance by the gate bias, which exhibited the advantage of the FET-type sensors compared to the diode-type ones. When the sensor was biased near the threshold voltage, the electron density in the channel showed a relatively larger change with a response to the gas exposure and demonstrated a significant improvement in the sensitivity. At 300 °C under 100 ppm concentration, the sensor’s sensitivities were 26.7% and 91.6%, while the response times were 32 and 9 s at VG = 0 V and VG = −1 V, respectively. The sensor demonstrated the stable repeatability regardless of the gate voltage at a high temperature.

Recent Reliability Progress of GaN HEMT Power Amplifiers

2012 ◽  
Vol 1432 ◽  
Author(s):  
Toshihiro Ohki ◽  
Masahito Kanamura ◽  
Yoichi Kamada ◽  
Kozo Makiyama ◽  
Yusuke Inoue ◽  
...  
Keyword(s):  
High Efficiency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Device Structure ◽  
Passivation Film ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Specific Device ◽  
Gan Hemts ◽  
A Current

ABSTRACTIn this paper, we describe highly reliable GaN high electron mobility transistors (HEMTs) for high-power and high-efficiency amplifiers. First, we present the reliability mechanisms and progress on the previously reported GaN HEMTs. Next, we introduce our specific device structure of GaN HEMTs for improving reliability. An n-GaN cap and optimized buffer layer were used to suppress the trap-related phenomena, such as a current collapse. Gate edge oxidation is effective for reducing the gate leakage current. A Ta-based barrier metal was inserted between an ohmic electrode and interconnection metal for preventing increase in contact resistance. SiN of passivation film was optimized for reducing the current collapse of short-gatelength HEMTs.

Reliability issues of Gallium Nitride High Electron Mobility Transistors

2010 ◽  
Vol 2 (1) ◽  
pp. 39-50 ◽  
Author(s):  
Gaudenzio Meneghesso ◽  
Matteo Meneghini ◽  
Augusto Tazzoli ◽  
Nicolo' Ronchi ◽  
Antonio Stocco ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
Failure Modes ◽  
Deep Level ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Stress Tests ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts

In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and the progress in mean time to failure values, reliability of GaN HEMTs, and millimeter microwave integrated circuits still represent a relevant issue for the market penetration of these devices. The role of temperature in promoting GaN HEMT failure is controversial, and the accelerating degradation factors are largely unknown. The present paper proposes a methodology for the analysis of failure modes and mechanisms of GaN HEMTs, based on (i) DC and RF stress tests accompanied by an (ii) extensive characterization of traps using deep level transient spectroscopy and pulsed measurements, (iii) detailed analysis of electrical characteristics, and (iv) comparison with two-dimensional device simulations. Results of failure analysis using various microscopy and spectroscopy techniques are presented and failure mechanisms observed at the high electric field values typical of the operation of these devices are reviewed.

Comprehensive Analysis of Process Variability on AlGaN/GaN HEMTs through TCAD Simulations

2012 ◽  
Vol 711 ◽  
pp. 218-222
Author(s):  
Cristina Miccoli ◽  
Valeria Cinnera Martino ◽  
Salvatore Rinaudo
Keyword(s):  
Molar Fraction ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Strongly Correlated ◽  
Algan Layer ◽  
Process Variability ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Tcad Simulations

AlGaN/GaN high electron mobility transistors (HEMTs) have shown outstanding improvements in performance and reliability, becoming the leading option for power applications in the 1-40 GHz range. However, the presence of traps and defects in the hetero-structure are strongly correlated to the tolerance of the fabrication process. New powerful models designed to overcome limitations associated with the Process Variability (PV) may be part of the exploitation outcome. This work describes a methodology useful to characterize the effects of PV on AlGaN/GaN HEMTs performance, by deriving Process Compact Model (PCM) from systematic TCAD simulations. The device under examination is an Al0.26Ga0.74N/GaN HEMT and the selected critical process parameters are: molar fraction of the first AlGaN layer, AlGaN layer thickness, source-gate and drain-gate distance, field plate extension, gate height and width, recessed effect under the gate contact.

Sign in / Sign up

Export Citation Format

Share Document