Reaction And Interdiffusion at III-V Compound Semiconductor-Metal Interfaces

1985 ◽  
Vol 54 ◽  
Author(s):  
L. J. Brillson
Keyword(s):  
Schottky Barrier ◽  
Surface Science ◽  
Compound Semiconductor ◽  
Atomic Scale ◽  
Interfacial Chemistry ◽  
Barrier Heights ◽  
Barrier Formation ◽  
At Iii ◽  
Metal Interfaces

ABSTRACTThe characterization of III-V compound semiconductor-metal interfaces by surface science techniques has led to new relationships between interfacial chemistry and Schottky barrier formation. These and recent results on ternary alloy III-V compounds suggest a greater control of Schottky barrier heights by atomic scale techniques and advanced III-V materials than previously believed.

Characterization of interface states at III‐V compound semiconductor‐metal interfaces

1991 ◽  
Vol 69 (4) ◽  
pp. 2312-2316 ◽  
Author(s):  
L. Burstein ◽  
J. Bregman ◽  
Yoram Shapira
Keyword(s):  
Compound Semiconductor ◽  
Interface States ◽  
At Iii ◽  
Metal Interfaces

Process-Dependent Electronic Structure at Metallized GaAs Contacts

1992 ◽  
Vol 260 ◽  
Author(s):  
L. J. Brillson ◽  
I. M. Vitomirov ◽  
A. Raisanen ◽  
S. Chang ◽  
R. E. Viturro ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Chemical Interaction ◽  
Deep Level ◽  
Multiple Roles ◽  
Atomic Scale ◽  
Photoemission Spectroscopy ◽  
Band Bending ◽  
Barrier Heights ◽  
Barrier Formation ◽  
Thermally Driven

ABSTRACTThe influence of metallization and processing on Schottky barrier formation provides the basis for one of several fruitful approaches for controlling junction electronic properties. Interface cathodo-and photoluminescence measurements reveal that electrically-active deep levels form on GaAs(100) surfaces and metal interfaces which depend on thermally-driven surface stoichiometry and reconstruction, chemical interaction, as well as surface misorientation and bulk crystal quality. These interface states are discrete and occur at multiple gap energies which can account for observed band bending. Characteristic trends in such deep level emission with interface processing provide guides for optimizing interface electronic behavior. Correspondingly, photoemission and internal photoemission spectroscopy measurements indicate self-consistent changes in barrier heights which may be heterogeneous and attributable to interface chemical reactions observed on a monolayer scale. These results highlight the multiple roles of atomic-scale structure in forming macroscopic electronic properties of compound semiconductor-metal junctions.

scholarly journals Atomic-scale characterization of (mostly zincblende) compound semiconductor heterostructures

2013 ◽  
Vol 471 ◽  
pp. 012005 ◽  
Author(s):  
David J Smith ◽  
T Aoki ◽  
J K Furdyna ◽  
X Liu ◽  
M R McCartney ◽  
...  
Keyword(s):  
Compound Semiconductor ◽  
Semiconductor Heterostructures ◽  
Atomic Scale ◽  
Scale Characterization

Electrical Properties of Copper Silicide/Silicon Interfaces

1993 ◽  
Vol 320 ◽  
Author(s):  
B.G. Svensson
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Deep Level ◽  
Ion Beam ◽  
Energy Levels ◽  
Copper Silicide ◽  
Barrier Heights ◽  
Barrier Formation ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTThe electrical properties of Cu/Si(100) and Cu3Si/Si(100) interfaces have been studied using both n- and p-type silicon samples. Current-voltage and capacitance-voltage measurements were performed in the temperature range 80-295 K in order to monitor Schottky barrier formation and electrical carrier concentration profiles. Deep-level transient spectroscopy was employed to observe Cu-related energy levels in the forbidden band gap of Si, and different ion beam analysis techniques were applied to study the interfacial reaction between Cu and Si. Emphasis is put on determination of Schottky barrier heights and their variation with temperature, dopant passivation by Cu atoms and interaction of Cu with irradiation-induced point defects in silicon.

Electrical Properties and Schottky Barriers of Metal-Semiconductor Interfaces

1990 ◽  
Vol 181 ◽  
Author(s):  
M.O. Aboelfotoh
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Barrier Formation ◽  
Indirect Band Gap ◽  
P Type

ABSTRACTThe electrical properties of metal/Si(100) and metal/Ge(100) interfaces formed by the deposition of metal on both n-type and p-type Si(100) and Ge(100) have been studied in the temperature range 77-295 K with the use of current- and capacitance-voltage techniques. Compound formation is found to have very little or no effect on the Schottky-barrier height and its temperature dependence. For silicon, the barrier height and its temperature dependence are found to be affected by the metal. For germanium, on the other hand, the barrier height and its temperature dependence are unaffected by the metal. The temperature dependence of the Si and Ge barrier heights is found to deviate from the predictions of recent models of Schottky-barrier formation based on the suggestion of Fermi-level pinning in the center of the semiconductor indirect band gap.

Low Schottky Barrier on N-Type Si for N-Channel Schottky Source/Drain MOSFETs

2003 ◽  
Vol 765 ◽  
Author(s):  
Meng Tao ◽  
Darshak Udeshi ◽  
Shruddha Agarwal ◽  
Nasir Basit ◽  
Eduardo Maldonado ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Atomic Scale ◽  
Barrier Heights ◽  
Metal Work Function ◽  
Metal Silicides ◽  
The Common ◽  
Work Functions ◽  
Metal Work ◽  
Density Of Interface States ◽  
The Ideal

AbstractSchottky source/drain (S/D) in Si-CMOS provide an alternative to current approaches in S/D, channel, and gate-stack engineering. The Schottky S/D PMOS has been demonstrated at a number of university and industrial laboratories. The bottleneck for the Schottky S/D NMOS is the fact that none of the common metals or metal silicides has a low enough barrier height (~0.2 eV) on n-type Si. A method to produce low Schottky barriers on n-type Si with common metals including aluminum (Al) and chromium (Cr) is reported in this paper. The interface between metal and Si(100) is engineered at the atomic scale with a monolayer of selenium (Se) to reduce the density of interface states, and the engineered interface shows inertness to chemical and electronic processes at the interface. One consequence of this electronic inertness is that the Schottky barrier is now more dependent on the metal work function. Al and Cr both have work functions very close to the Si electron affinity. It is found that the Schottky barrier of Al on Se-engineered n-type Si(100) is 0.08 eV, and that of Cr is 0.26 eV. These numbers agree well with the ideal Schottky barrier heights for Al and Cr on n-type Si(100), but are significantly different from the barrier heights known for four decades for these metals on n-type Si(100). These results bring new hope for the Schottky S/D NMOS with a metal commonly used in the Si industry.

Interfacial chemistry and Schottky-barrier formation of the Ni/InP(110) and Ni/GaAs(110) interfaces

1985 ◽  
Vol 32 (6) ◽  
pp. 3758-3765 ◽  
Author(s):  
T. Kendelewicz ◽  
M. D. Williams ◽  
W. G. Petro ◽  
I. Lindau ◽  
W. E. Spicer
Keyword(s):  
Schottky Barrier ◽  
Interfacial Chemistry ◽  
Barrier Formation

Role of Cation Dissociation in Schottky Barrier Formation at II–VI Compound Semiconductor-Metal Interfaces

1981 ◽  
Vol 10 ◽  
Author(s):  
C. F. Brucker ◽  
L. J. Brillson
Keyword(s):  
Schottky Barrier ◽  
Ultrahigh Vacuum ◽  
Active Species ◽  
Barrier Formation ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Interfacial Chemical Reaction ◽  
Metal Interfaces ◽  
Cation Dissociation

We used UV and X-ray photoemission spectroscopies to probe the relation between the chemical and electronic structure at ultrahigh-vacuum-cleaved CdS-metal and CdSe-metal interfaces. When combined with current-voltage and capacitance-voltage studies of the same interfaces in ultrahigh vacuum, the experimental results indicate that partially dissociated cadmium cations, produced as a consequence of interfacial chemical reaction, may be the electrically active species giving rise to the observed Fermi level stabilization at these contacts. The extent of cation dissociation, a spectroscopically determined quantity, is shown to correlate inversely with the measured Schottky barrier height. An indirect and modified doping effect is suggested as one possible mechanism to explain this behavior. Features of interdiffusion, in particular regarding the interfacial distribution of dissociated cadmium, are also described.

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