Electrical Characterization of the Oxide-Silicon Carbide Interface by MOS Conductance Technique
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ABSTRACTThe electrical properties of the SiO2/SiC interface were studied using the conductance vs voltage (G-V) data for the metal-oxide-SiC (MOS) structure. It was found that the dry oxide contained too mjch charge either at the oxide-SiC interface or within the oxide films to obtain useful data. On the other hand the wet oxide invariably resulted in better capacitance and conductance data. The capacitance-voltage data showed that the SiC surface exhibited accumulation, depletion or inversion when the appropriate gate bias was applied. The conductance-voltage data indicate electronic surface states at the oxide-SiC interface. From this conductance data the interface state density has been estimated.
2016 ◽
Vol 2
(3)
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pp. 7
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2016 ◽
Vol 2
(3)
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pp. 7
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2013 ◽
Vol 133
(7)
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pp. 1279-1284
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2014 ◽
Vol 778-780
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pp. 631-634
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1992 ◽
Vol 63
(9)
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pp. 4189-4191
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