Radiation-Induced Defects in Electron and Proton Irradiated ZnS

1998 ◽  
Vol 540 ◽  
Author(s):  
S. Brunner ◽  
W. Puff ◽  
P. Mascher ◽  
A.G. Balogh
Keyword(s):  
Vapour Deposition ◽  
Proton Irradiation ◽  
Positron Lifetime ◽  
Chemical Vapour ◽  
Isochronal Annealing ◽  
Doppler Broadening ◽  
Defect Complexes ◽  
Radiation Induced ◽  
The Stability ◽  
Induced Defects

AbstractIn this contribution, we present a study aimed at investigating the microstructural changes of ZnS single crystals and CVD (chemical vapour deposition) grown crystals after electron and proton irradiation. Positron lifetime and Doppler-broadening measurements were performed to investigate the stability of the radiation induced defects and possible clustering mechanisms during isochronal annealing. After electron as well as proton irradiation the significant changes in the annihilation characteristics are indications of radiation induced open-volume-type defects. It is found that electron and proton irradiation causes different changes in the positron annihilation characteristics. After electron irradiation a significant defect component is observed which can be attributed to the annihilation in monovacancies. During isochronal annealing agglomerations to divacancy-type defects take place. Proton irradiation reveals a significantly different defect structure. Isochronal annealing causes agglomerations to larger defect complexes. The observed annealing stages are indications of the annealing of variously sized vacancy complexes.

Proton Irradiation Induced Defects in 611- and 4H-SiC

1998 ◽  
Vol 540 ◽  
Author(s):  
Werner Puff ◽  
Adam G. Balogh ◽  
Peter Mascher
Keyword(s):  
Proton Irradiation ◽  
Positron Lifetime ◽  
Doppler Broadening ◽  
Defect Complexes ◽  
Radiation Induced ◽  
Positron Lifetime Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Type Sample

AbstractAnnealing of defects in proton irradiated bulk n-type 6H- and semi-insulating 4H-SiC has been investigated by positron lifetime spectroscopy and Doppler-broadening measurements. For the n-type sample radiation induced defects in dependence of the proton fluence were studied. Three or four annealing stages were found, during which the formation of larger defect complexes could be observed.

Microstructural Evolution of Radiation Induced Defects In ZnO During Isochronal Annealing

1998 ◽  
Vol 540 ◽  
Author(s):  
S. Brunner ◽  
W. Puff ◽  
P. Mascher ◽  
A.G. Balogh
Keyword(s):  
Room Temperature ◽  
Proton Irradiation ◽  
Positron Lifetime ◽  
Thermal Evolution ◽  
Isochronal Annealing ◽  
Doppler Broadening ◽  
Thermal Dependence ◽  
Radiation Induced ◽  
Induced Defects ◽  
Mev Protons

AbstractIn this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing. The nominally undoped samples were irradiated either with 3 MeV protons to a fluence of 1.2× 1018 p/cm2 or with 1 MeV electrons to a fluence of 1×1018 e/cm2. The investigation was performed with positron lifetime and Doppler-broadening measurements. The measurements were done at room temperature and in some cases down to 10 K to investigate the thermal dependence of the trapping characteristics of the positrons.

Vacancy-Type Defects in as-Grown and Proton-Irradiated 6H-SiC

1998 ◽  
Vol 512 ◽  
Author(s):  
Werner Puff ◽  
Peter Mascher ◽  
Adam G. Balogh
Keyword(s):  
Positron Lifetime ◽  
Doppler Broadening ◽  
Defect Complexes ◽  
Radiation Induced ◽  
Positron Lifetime Spectroscopy ◽  
P Type ◽  
Induced Defects

ABSTRACTAnnealing of defects in as-grown and proton irradiated bulk n- and p-type 6H-SiC has been investigated by positron lifetime spectroscopy and Doppler-broadening measurements. The grown-in defects do not anneal out until 1600 °C, whereas the radiation induced defects show three main annealing stages well below this temperature. During annealing, the formation of larger defect complexes can be observed.

An Investigation of Point Defects in NiAl Using Positron Annihilation Techniques

1998 ◽  
Vol 552 ◽  
Author(s):  
Werner Puff ◽  
Bernd Logar ◽  
Adam G. Balogh
Keyword(s):  
Positron Annihilation ◽  
Point Defects ◽  
Proton Irradiation ◽  
Positron Lifetime ◽  
Composition Range ◽  
Isochronal Annealing ◽  
Doppler Broadening ◽  
Positron Lifetime Spectroscopy ◽  
Induced Defects

ABSTRACTVacancy-like defects in NiAl in the composition range 47 at.-% < CNi < 53 at.-% are investigated by means of positron lifetime spectroscopy and Doppler-broadening measurements. The observed lifetimes in the annealed samples confirm that defects are quenched-in during the production of the samples. Isochronal annealing of samples quenched at 1600°C and after proton irradiation show that the induced defects are quite different.

Vacancy-Type Defects in Electron and Proton Irradiated II-VI Compounds

1998 ◽  
Vol 510 ◽  
Author(s):  
S. Brunner ◽  
W. Puff ◽  
P. Mascher ◽  
A.G. Balogh
Keyword(s):  
Band Gap ◽  
Proton Irradiation ◽  
Positron Lifetime ◽  
Wide Band ◽  
Compound Semiconductors ◽  
Doppler Broadening ◽  
Wide Band Gap ◽  
Radiation Induced ◽  
Induced Defects ◽  
Mev Protons

AbstractIn this contribution we present a study aimed at comparing results of positron-lifetime and Doppler-broadening measurements on the wide-band-gap compound semiconductors ZnS, ZnSe, and ZnTe. To investigate the basic properties of intrinsic and radiation induced defects the samples were irradiated either with 3 MeV protons or 1 MeV electrons. The isochronal annealing was performed in an Ar atmosphere. It was found that electron and proton irradiation cause different changes in the positron annihilation characteristics. Several annealing stages were observed, related to the annealing of variously sized vacancy complexes.

Development of a SiNx-Based Barrier Coating for SiC Fibres

2015 ◽  
Vol 825-826 ◽  
pp. 256-263 ◽  
Author(s):  
Kristina Roder ◽  
Daisy Nestler ◽  
Daniel Wett ◽  
Bernd Mainzer ◽  
Martin Frieß ◽  
...  
Keyword(s):  
Coating Thickness ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Liquid Silicon ◽  
Barrier Coating ◽  
Fibre Coating ◽  
Variable Chemical ◽  
Pressure Chemical ◽  
Sic Composites ◽  
The Stability

Uncoated SiC fibres in SiC/SiC composites manufactured by the liquid-silicon infiltration (LSI) process show a strong degradation as a result of silicon attack. The goal of this research is the development of a SiNx-based fibre coating, which acts as a barrier against the liquid silicon. The coating is applied by means of low-pressure chemical vapour deposition (LPCVD) utilising the gaseous precursors silane (SiH4) and ammonia (NH3) on a commercial SiC multifilament yarn. The result is an amorphous fibre coating with an increasing coating thickness and a variable chemical composition from the middle of the yarn to the edges. The coated fibres exhibit a reduced characteristic Weibull strength in comparison to the uncoated fibres. In order to examine the stability of the films, the coated fibres undergo a heat treatment at 1450 °C in different environments (vacuum, argon and nitrogen). In all environments, the amorphous SiNxcoatings crystallise to the trigonal Si3N4. Depending on the coating thickness cracks and defects develop. However, the best results and the lowest amount of damaging occurs during the treatment in nitrogen.

Defect Network in Superconducting Ceramic Oxides Studied by Neutron and Proton Irradiation

1990 ◽  
Vol 209 ◽  
Author(s):  
E. Mezzetti ◽  
D. Andreone ◽  
G. Castagno ◽  
R. Cherubini ◽  
S. Colombo ◽  
...  
Keyword(s):  
Critical Current Density ◽  
Proton Irradiation ◽  
Short Circuit ◽  
Oxide Ceramics ◽  
High Fluence ◽  
Ceramic Oxides ◽  
Radiation Induced ◽  
Proton Implantation ◽  
Induced Defects ◽  
Superconducting Ceramic

ABSTRACTThis paper investigates both transport properties and nature of superconductivity breakdown or, conversely, enhancement in oxide ceramics, due to radiation-induced defects.Low-fluence neutrons (≈107 n cm-2 at 3 MeV) can sensitively damage the samples, giving experimental evidence that the breakdown of coherent percolating paths produces decoupled domains. A set of preliminary measurements shows that high-fluence proton implantation can either damage or enhance critical current density in a currently non controllable way. In both cases strongly damaged or enhanced superconducting paths short-circuit the unaffected bulk network.

Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors

2011 ◽  
Vol 679-680 ◽  
pp. 547-550
Author(s):  
Rupert C. Stevens ◽  
Konstantin Vassilevski ◽  
John E. Lees ◽  
Nicolas G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Schottky Diode ◽  
Nuclear Power ◽  
Proton Irradiation ◽  
Deep Level ◽  
High Dose ◽  
X Ray ◽  
Power Stations ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects

Detectors capable of withstanding high radiation environments for prolonged periods of exposure are essential for the monitoring of nuclear power stations and nuclear waste as well as for space exploration. Schottky diode X-ray detectors were exposed to high dose proton irradiation (1013 cm-2, 50 MeV) and changes in the detection resolution (spectroscopic full width half-maximum) have been observed. Using Deep Level Transient Spectroscopy (DLTS) and the degradation of the electrical characteristics of the diode, we have shown that radiation induced traps located in the upper half of the bandgap have reduced the concentration of carriers.

Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy

2006 ◽  
Vol 527-529 ◽  
pp. 575-578 ◽  
Author(s):  
Reino Aavikko ◽  
Kimmo Saarinen ◽  
Björn Magnusson ◽  
Erik Janzén
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Positron Annihilation ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Annihilation Radiation ◽  
Doppler Broadening ◽  
Vacancy Clusters ◽  
Positron Spectroscopy

Positron annihilation radiation Doppler broadening spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapour deposition (HTCVD). The Doppler broadening measurements show (i) that the measured samples contain vacancy clusters (ii) that the positron trapping to the clusters is increased in annealing (iii) that the chemical environment of the defects in the un-annealed samples is different from those of the annealed samples.

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