High Temperature Annealing Behaviors of Luminescent Siox:H Films

1999 ◽  
Vol 560 ◽  
Author(s):  
Zhixun Ma ◽  
Xianbi Xiang ◽  
Shuran Sheng ◽  
Xianbo Liao ◽  
Chunlin Shao ◽  
...  
Keyword(s):  
High Temperature ◽  
Absorption Edge ◽  
Optical Transition ◽  
Stokes Shift ◽  
Transition Process ◽  
Ir Absorption ◽  
High Temperature Annealing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Si Nanocrystals

ABSTRACTThe effects of high temperature annealing on the microstructure and optical properties of luminescent SiOx:H films have been investigated. Micro-Raman scattering and IR absorption, in combination with atomic force microscopy (AFM), provide evidence for the existence of both a-Si clusters in the as-grown a-SiOx:H and Si nanocrystals in the 1170°C annealed films. The dependence of optical coefficients (μ) on photon energy (hv) near the absorption edge (Eg) is found to follow the square root law: (μhv)½ μ (Eg – hv), indicating that nano-Si embedded in Si02 is still an indirect material. A comparison of the deduced absorption edge with the PL spectra shows an obvious Stokes shift, suggesting that phonons should be involved in the optical transition process.

Suppression of SiC surface roughening during high-temperature annealing by atmospheric control using purified Ar gas

2010 ◽  
Vol 25 (4) ◽  
pp. 708-710 ◽  
Author(s):  
Atsushi Ogura ◽  
Daisuke Kosemura ◽  
Shingo Kinoshita
Keyword(s):  
Surface Roughness ◽  
High Temperature ◽  
Surface Roughening ◽  
Annealing Atmosphere ◽  
High Temperature Annealing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Furnace Tube ◽  
Ar Gas

4H-silicon carbide (SiC) wafers were annealed at 1300 and 1600 °C for 30 min and 60 min in a conventional and purified Ar atmosphere. The surface roughness before and after annealing was evaluated by atomic force microscopy. The surface roughness before annealing was approximately 2.37 nm in root mean square. The roughness, after annealing for 30 min at 1300 and 1600 °C in a conventional Ar furnace, was increased to 4.53 and 14.9 nm, respectively. The roughness, after annealing for 60 min, was 5.01 and 19.1 nm, respectively. In this study, the G3 grade Ar gas (99.999%) was supplied in the conventional furnace tube. When the Ar gas was purified to an impurity concentration of less than 1 ppb, and it was supplied in the leak-tight furnace tube, the roughness after 30-min annealing improved 4.27 and 6.93 nm at 1300 and 1600 °C, respectively. The roughness after 60-min annealing was also reduced to 3.54 and 9.28 nm, respectively. We assume that a significant reduction of H2O concentration in the annealing atmosphere might play an important role in suppressing surface roughening of SiC during high-temperature annealing.

Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation

2006 ◽  
Vol 527-529 ◽  
pp. 915-918 ◽  
Author(s):  
Y. Wang ◽  
M.K. Mikhov ◽  
B.J. Skromme
Keyword(s):  
High Temperature ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Extended Defects ◽  
High Temperature Annealing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Encapsulation Method ◽  
The Impact

The impact of high temperature annealing using graphite encapsulation (formed by baking photoresist) on the electrical properties of Ni Schottky diodes formed on the annealed surfaces is studied. The surface morphology is also characterized by atomic force microscopy (AFM). Annealing for 10 minutes at temperatures up to 1800 °C with graphite encapsulation actually reduces the high-current ideality factor of the diodes while raising the current-voltage barrier height (linearly extrapolated to unity ideality factor) from 1.453 V to 1.67-1.73 V. Excess leakage current occurs only in a subset of diodes, which are believed to be affected by extended defects. The AFM images show no significant surface roughening, and the graphite can be removed after processing. This encapsulation method is found to be highly effective in preserving the electronic properties of the surface during high temperature annealing.

Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing

2016 ◽  
Vol 858 ◽  
pp. 233-236 ◽  
Author(s):  
Nadeemullah A. Mahadik ◽  
Robert E. Stahlbush ◽  
Eugene A. Imhoff ◽  
M.J. Tadjer ◽  
G.E. Ruland ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
High Temperature ◽  
Surface Morphology ◽  
Substrate Surface ◽  
High Temperature Annealing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Annealing ◽  
Edge Dislocations

Basal Plane Dislocations (BPD) intersecting the SiC substrate surface were converted to threading edge dislocations (TED) by high temperature annealing of the substrates in the temperature range of 1750 °C – 1950 °C. Successively, epitaxial growth on annealed as well as non-annealed samples was performed, concurrently, to investigate the effect of the substrate annealing on BPD mitigation in the epilayers. For the 1950 °C/10min anneal, a 3x reduction in BPD density was observed. Additionally, surface roughness measured using atomic force microscopy revealed no degradation in surface morphology of the grown epilayers after annealing.

Structural Characterization of Nc-Si/A-Sio2 Superlattices Subjected To Thermal Treatment

1998 ◽  
Vol 536 ◽  
Author(s):  
G. F. Grom ◽  
L. Tsybeskov ◽  
K. D. Hirschman ◽  
P. M. Fauchet ◽  
J. P. McCaffrey ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Defect Density ◽  
High Temperature Annealing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Si Nanocrystals

AbstractThe morphology of nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs) is studied using Raman spectroscopy in the acoustic and optical phonon ranges, transmission electron microscopy (TEM), and atomic force microscopy (AFM). It is demonstrated that high temperature annealing (up to 1100°C) and oxidation in O2/H2O ambient do not destroy the SL structure, which retains its original periodicity and nc-Si/a-SiO2 interface abruptness. It is found that oxidation at high temperatures reduces the defect density in nc-Si/a-SiO2 SLs and induces the lateral coalescence of Si nanocrystals (NCs). The size, shape, packing density, and crystallographic orientation of the Si nanocrystals are studied as a function of the oxidation time.

AFM study of the dynamics of α-alumina surface faceting during high-temperature processing

1995 ◽  
Vol 53 ◽  
pp. 334-335 ◽  
Author(s):  
Michael W. Bench ◽  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
High Temperature ◽  
Thin Foil ◽  
Sem Analysis ◽  
Conductive Coatings ◽  
Force Microscopy ◽  
Minimal Sample ◽  
Atomic Force ◽  
Formation And Evolution ◽  
High Temperature Processing ◽  
Nominal Surface

To gain a better understanding of the surface faceting that occurs in α-alumina during high temperature processing, atomic force microscopy (AFM) studies have been performed to follow the formation and evolution of the facets. AFM was chosen because it allows for analysis of topographical details down to the atomic level with minimal sample preparation. This is in contrast to SEM analysis, which typically requires the application of conductive coatings that can alter the surface between subsequent heat treatments. Similar experiments have been performed in the TEM; however, due to thin foil and hole edge effects the results may not be representative of the behavior of bulk surfaces.The AFM studies were performed on a Digital Instruments Nanoscope III using microfabricated Si3N4 cantilevers. All images were recorded in air with a nominal applied force of 10-15 nN. The alumina samples were prepared from pre-polished single crystals with (0001), , and nominal surface orientations.

scholarly journals Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Yong-Jin Cho ◽  
Alex Summerfield ◽  
Andrew Davies ◽  
Tin S. Cheng ◽  
Emily F. Smith ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Graphite Substrate ◽  
Force Microscopy ◽  
Atomic Force

Abstract We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate.

Non Destructive Determination of the Threading Dislocation Density of Smooth Simox Substrates using Atomic Force Microscopy

2000 ◽  
Vol 6 (S2) ◽  
pp. 1088-1089
Author(s):  
A. Domenicucci ◽  
R. Murphy ◽  
D. Sadanna ◽  
S. Klepeis
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
High Dose ◽  
Threading Dislocation ◽  
Crystal Silicon ◽  
Force Microscopy ◽  
Atomic Force ◽  
High Temperature Anneal

Atomic force microscopy (AFM) has been used extensively in recent years to study the topographic nature of surfaces in the nanometer range. Its high resolution and ability to be automated have made it an indispensable tool in semiconductor fabrication. Traditionally, AFM has been used to monitor the surface roughness of substrates fabricated by separation by implanted oxygen (SIMOX) processes. It was during such monitoring that a novel use of AFM was uncovered.A SIMOX process requires two basic steps - a high dose oxygen ion implantation (1017 to 1018 cm-3) followed by a high temperature anneal (>1200°C). The result of these processes is to form a buried oxide layer which isolates a top single crystal silicon layer from the underlying substrate. Pairs of threading dislocations can form in the top silicon layer during the high temperature anneal as a result of damage caused during the high dose oxygen implant.

Sign in / Sign up

Export Citation Format

Share Document