Selective Dry Etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP Systems

1999 ◽  
Vol 573 ◽  
Author(s):  
D. C. Hays ◽  
C. R. Abernathy ◽  
W. S. Hobson ◽  
S. J. Pearton ◽  
J. Han ◽  
...  
Keyword(s):  
Bond Strength ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Selective Etching ◽  
Ion Flux ◽  
Strong Function ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Two Factors

ABSTRACTSelective etching of InN over GaN and AlN, and of GaAs over both AlGaAs and InGaP was examined with a number of different plasma chemistries under inductively coupled plasma conditions. Selectivities up to 55 for InN/GaN and 20 for InN/AlN were achieved in IC1/Ar discharges. For GaAs/AlGaAs, maximum selectivities of 75(with BCl3/SF6) were obtained while for GaAs/InGaP values of 80(with BCl3/SF6) and 25(with BCl3/NF3) were achieved. Selective etching of InGaP over GaAs is possible with either CH4/H2 or BI3. The selectivity is a strong function of ion flux and ion energy, and can result from two factors – either formation of a nonvolatile etch product, or a difference in bond strength between the two materials.

Dry Etching to form Submicron Features in CMR Oxides: (Pr,Ba,Ca)MnO3 and (La,Sr)MnO3

1999 ◽  
Vol 574 ◽  
Author(s):  
K. P. Lee ◽  
K. B. Jung ◽  
H. Cho ◽  
D. Kumar ◽  
S. V. Pietambaram ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Ion Flux ◽  
Pattern Transfer ◽  
Surface Smoothing ◽  
Strong Function ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Etch Rates

AbstractEffective pattern transfer into (Pr,Ba,Ca)MnO3 and (La,Sr)MnO3 has been achieved using Cl2/Ar discharges operated under Inductively Coupled Plasma conditions. Etch rates up to 900 Å-min−1 for (La,Sr)MnO3 and 300 Å-min−1 for (Pr,Ba,Ca)MnO3 were obtained, with these rates being a strong function of ion flux, ion energy and ion-to-neutral ratio. The etching is still physically-dominated under all conditions, leading to significant surface smoothing on initially rough samples. Sub-micron (0.35 μm) features have been produced in both materials using SiNx as the mask.

Low Bias Dry Etching of Sic and Sicn in ICP NF3 Discharges

1998 ◽  
Vol 512 ◽  
Author(s):  
J. J. Wang ◽  
Hyun Cho ◽  
E. S. Lambers ◽  
S. J. Peartont ◽  
M. Ostling ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Flux ◽  
Pattern Transfer ◽  
Plasma Composition ◽  
Source Power ◽  
Ion Energy ◽  
Trade Off ◽  
Inductively Coupled ◽  
Extensive Surface ◽  
Etch Rates

ABSTRACTA parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.8N0.2 in Inductively Coupled Plasma NF3/O2 and NF3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power reaching 3500Å·min−1 for SiC and 7500 Å·min−1 for SiCN. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tinoxide( ITO) masks display relatively good etch selectivity over SiC(maximum of 70:1) while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions. The high ion flux available in the ICP tool allows etching even at very low dc self-biases, ≤ −10V, leading to very low damage pattern transfer.

Low Bias Voltage Dry Etching of InP by Inductively Coupled Plasma Using SiCl4/Ar

1998 ◽  
Vol 37 (Part 1, No. 12A) ◽  
pp. 6655-6656 ◽  
Author(s):  
Akihiro Matsutani ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Bias Voltage ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

Angled stripe InGaAsP/InP SLED fabricated by low-damage inductively coupled plasma dry etching

2004 ◽  
Author(s):  
Jun Zhang ◽  
Xiaodong Huang ◽  
Jin Chang ◽  
Yingjun Liu ◽  
Yi Gan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

Dry Etching of TaN/HfO2Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma

2005 ◽  
Vol 44 (7B) ◽  
pp. 5811-5818 ◽  
Author(s):  
Myoung Hun Shin ◽  
Sung-Woong Na ◽  
Nae-Eung Lee ◽  
Tae Kwan Oh ◽  
Jiyoung Kim ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

Hydrogenation and Defect Creation in GaAs-Based Devices During High Density Plasma Processing

1998 ◽  
Vol 510 ◽  
Author(s):  
T. Maeda ◽  
J. W. Lee ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Source Power ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Self Bias

AbstractThe effects of Inductively Coupled Plasma (ICP) and Electron Cyclotron Resonance (ECR) H2 plasmas on GaAs metal semiconductor field effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have been measured as a function of ion flux, ion energy and process pressure. The chemical effects of hydrogenation have been compared to direct physical bombardment by Ar plasmas under the same conditions. Si dopant passivation in MESFETs and HEMTs and C base-dopant passivation in HBTs produces much larger changes in sheet resistance, breakdown voltage and device gain or transconductance than Ar ion bombardment and suggests that H2-containing plasma chemistries (CH4/H2 for semiconductor etching, SiH4 for dielectric deposition, CHF3 for dielectric etching) should be avoided, or at least the exposure of the surface minimized. In some cases the device degradation is less for higher source power conditions, due to the suppression of cathode dc self-bias and hence ion energy.

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