Dry Etching to form Submicron Features in CMR Oxides: (Pr,Ba,Ca)MnO3 and (La,Sr)MnO3

1999 ◽  
Vol 574 ◽  
Author(s):  
K. P. Lee ◽  
K. B. Jung ◽  
H. Cho ◽  
D. Kumar ◽  
S. V. Pietambaram ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Ion Flux ◽  
Pattern Transfer ◽  
Surface Smoothing ◽  
Strong Function ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Etch Rates

AbstractEffective pattern transfer into (Pr,Ba,Ca)MnO3 and (La,Sr)MnO3 has been achieved using Cl2/Ar discharges operated under Inductively Coupled Plasma conditions. Etch rates up to 900 Å-min−1 for (La,Sr)MnO3 and 300 Å-min−1 for (Pr,Ba,Ca)MnO3 were obtained, with these rates being a strong function of ion flux, ion energy and ion-to-neutral ratio. The etching is still physically-dominated under all conditions, leading to significant surface smoothing on initially rough samples. Sub-micron (0.35 μm) features have been produced in both materials using SiNx as the mask.

Low Bias Dry Etching of Sic and Sicn in ICP NF3 Discharges

1998 ◽  
Vol 512 ◽  
Author(s):  
J. J. Wang ◽  
Hyun Cho ◽  
E. S. Lambers ◽  
S. J. Peartont ◽  
M. Ostling ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Flux ◽  
Pattern Transfer ◽  
Plasma Composition ◽  
Source Power ◽  
Ion Energy ◽  
Trade Off ◽  
Inductively Coupled ◽  
Extensive Surface ◽  
Etch Rates

ABSTRACTA parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.8N0.2 in Inductively Coupled Plasma NF3/O2 and NF3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power reaching 3500Å·min−1 for SiC and 7500 Å·min−1 for SiCN. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tinoxide( ITO) masks display relatively good etch selectivity over SiC(maximum of 70:1) while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions. The high ion flux available in the ICP tool allows etching even at very low dc self-biases, ≤ −10V, leading to very low damage pattern transfer.

Selective Dry Etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP Systems

1999 ◽  
Vol 573 ◽  
Author(s):  
D. C. Hays ◽  
C. R. Abernathy ◽  
W. S. Hobson ◽  
S. J. Pearton ◽  
J. Han ◽  
...  
Keyword(s):  
Bond Strength ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Selective Etching ◽  
Ion Flux ◽  
Strong Function ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Two Factors

ABSTRACTSelective etching of InN over GaN and AlN, and of GaAs over both AlGaAs and InGaP was examined with a number of different plasma chemistries under inductively coupled plasma conditions. Selectivities up to 55 for InN/GaN and 20 for InN/AlN were achieved in IC1/Ar discharges. For GaAs/AlGaAs, maximum selectivities of 75(with BCl3/SF6) were obtained while for GaAs/InGaP values of 80(with BCl3/SF6) and 25(with BCl3/NF3) were achieved. Selective etching of InGaP over GaAs is possible with either CH4/H2 or BI3. The selectivity is a strong function of ion flux and ion energy, and can result from two factors – either formation of a nonvolatile etch product, or a difference in bond strength between the two materials.

scholarly journals ICP Dry Etching of III-V Nitrides

1997 ◽  
Vol 468 ◽  
Author(s):  
C. B. Vartuli ◽  
J. W. Lee ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Rf Power ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Dc Bias ◽  
Etch Rates ◽  
Icp Dry Etching

ABSTRACTInductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH4/H2/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH4 based chemistries. The etch rates increased with increasing dc bias. At low rf power (150W), the etch rates increased with increasing ICP power, while at 350W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were ≤ 6 for InN over GaN, AlN, InGaN and InAlN under all conditions.

scholarly journals Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He

1999 ◽  
Vol 4 (S1) ◽  
pp. 763-768
Author(s):  
Hyun Cho ◽  
Y.B. Hahn ◽  
D.C. Hays ◽  
K.B. Jung ◽  
S.M. Donovan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasmas ◽  
Source Power ◽  
Strong Function ◽  
Inductively Coupled ◽  
Physical Sputtering ◽  
Etch Rates ◽  
Coupled Plasmas ◽  
Nitrogen Bond

The role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AlN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AlN and GaN were obtained with Cl2/He. Efficient breaking of the III-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AlN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of ∼ 80 for InN to GaN and InN to AlN were obtained.

scholarly journals Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar AND Cl2/He

1998 ◽  
Vol 537 ◽  
Author(s):  
Hyun Cho ◽  
Y.B. Hahn ◽  
D.C. Hays ◽  
K.B. Jung ◽  
S.M. Donovan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasmas ◽  
Source Power ◽  
Strong Function ◽  
Inductively Coupled ◽  
Physical Sputtering ◽  
Etch Rates ◽  
Coupled Plasmas ◽  
Nitrogen Bond

AbstractThe role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AIN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AIN and GaN were obtained with Cl2/He. Efficient breaking of the III-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AIN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of ∼ 80 for InN to GaN and InN to AIN were obtained.

Low Bias Voltage Dry Etching of InP by Inductively Coupled Plasma Using SiCl4/Ar

1998 ◽  
Vol 37 (Part 1, No. 12A) ◽  
pp. 6655-6656 ◽  
Author(s):  
Akihiro Matsutani ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Bias Voltage ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

Angled stripe InGaAsP/InP SLED fabricated by low-damage inductively coupled plasma dry etching

2004 ◽  
Author(s):  
Jun Zhang ◽  
Xiaodong Huang ◽  
Jin Chang ◽  
Yingjun Liu ◽  
Yi Gan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

Dry Etching of TaN/HfO2Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma

2005 ◽  
Vol 44 (7B) ◽  
pp. 5811-5818 ◽  
Author(s):  
Myoung Hun Shin ◽  
Sung-Woong Na ◽  
Nae-Eung Lee ◽  
Tae Kwan Oh ◽  
Jiyoung Kim ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled
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