AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
Andrey Nikolaev ◽  
Irina Nikitina ◽  
Andrey Zubrilov ◽  
Marina Mynbaeva ◽  
Yuriy Melnik ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Thick Layers

AbstractWe report on AlN wafers fabricated by hydride vapor phase epitaxy (HVPE). AlN thick layers were grown on Si substrates by HVPE. Growth rate was up to 60 microns per hour. After the growth of AlN layers, initial substrates were removed resulting in free-standing AlN wafers. The maximum thickness of AlN layer was about 1 mm. AlN free-standing single crystal wafers with a thickness ranging from 0.05 to 0.8 mm were studied by x-ray diffraction, transmission electron microscopy, optical absorption, and cathodoluminescence.

scholarly journals AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 432-437 ◽  
Author(s):  
Andrey Nikolaev ◽  
Irina Nikitina ◽  
Andrey Zubrilov ◽  
Marina Mynbaeva ◽  
Yuriy Melnik ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Thick Layers

We report on AlN wafers fabricated by hydride vapor phase epitaxy (HVPE). AlN thick layers were grown on Si substrates by HVPE. Growth rate was up to 60 microns per hour. After the growth of AlN layers, initial substrates were removed resulting in free-standing AlN wafers. The maximum thickness of AlN layer was about 1 mm. AlN free-standing single crystal wafers with a thickness ranging from 0.05 to 0.8 mm were studied by x-ray diffraction, transmission electron microscopy, optical absorption, and cathodoluminescence.

Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films

2000 ◽  
Vol 88 (11) ◽  
pp. 6252-6259 ◽  
Author(s):  
V. Ratnikov ◽  
R. Kyutt ◽  
T. Shubina ◽  
T. Paskova ◽  
E. Valcheva ◽  
...  
Keyword(s):  
Diffraction Study ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray

Synthesis of SiOx Nanowires through the Thermal Heating of Au-Coated Si Substrates

2007 ◽  
Vol 119 ◽  
pp. 79-82
Author(s):  
Hyoun Woo Kim ◽  
S.H. Shim ◽  
Jong Woo Lee
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Heating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Structures ◽  
Scanning Electron

We have demonstrated the growth of SiOx nanowires by the simple heating of the Au-coated Si substrates. We used X-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, and transmission electron microscopy to characterize the samples. The as-synthesized SiOx nanowires had amorphous structures with diameters in the range of 10-70 nm. We have discussed the possible growth mechanism.

Study of Germanium Epitaxial Recrystallization on Bulk-Si Substrates

2010 ◽  
Vol 1252 ◽  
Author(s):  
Byron Ho ◽  
Reinaldo Vega ◽  
Tsu-Jae King-Liu
Keyword(s):  
Electron Microscopy ◽  
Diffusion Theory ◽  
Grazing Incidence ◽  
Quasi Equilibrium ◽  
X Ray Diffraction ◽  
Rapid Thermal Anneal ◽  
Simple Diffusion ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

AbstractLPCVD Ge films are deposited onto bulk Si substrates and subjected to either a rapid thermal anneal (RTA) or furnace anneal (FA) at a temperature that is higher than the melting point of Ge in an attempt to induce epitaxial recrystallization. Spiking into the Si and voids in the Ge film are observed after the anneal. This is attributed to defect-assisted Ge diffusion into the Si substrate caused by strain at the Ge-Si interface. Simple diffusion theory using published diffusivity values predicts diffusion depths similar to the spiking depths observed by scanning electron microscopy and transmission electron microscopy. Approaches to reduce the strain at the interface are explored. It is found that the quasi-equilibrium nature of FA reduces spiking and that there is an area dependence. Grazing-incidence x-ray diffraction analysis suggests that this technique for epitaxial recrystallization does not result in single-crystalline Ge.

Structural Characterization of P-I-N Diode Superlattice Structures Grown on , , and Orientation Si Substrates

1991 ◽  
Vol 220 ◽  
Author(s):  
P. M. Adams ◽  
R. C. Bowman ◽  
V. Arbet-Engols ◽  
K. L. Wang ◽  
C. C. Ahn
Keyword(s):  
Electron Microscopy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Substrate Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Superlattice Structures ◽  
Strained Layer Superlattices

ABSTRACTP-I-N diodes whose intrinsic region consists of strained layer superlattices (SLS), separated by 40 nm Si spacers, have been grown by MBE on Si substrates with <100>, <110>, and <111> orientations. These structures have been characterized by x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The dual periodicities in these structures produced unique XRD effects and the quality was highly dependent on substrate orientation. The <100> sample was in general free of defects, whereas the <110> and <111> specimens contained significant numbers of twins and dislocations.

SnO2 Nanostructures Synthesized on Co Substrates

2007 ◽  
Vol 124-126 ◽  
pp. 1289-1292
Author(s):  
Hyoun Woo Kim ◽  
S.H. Shim ◽  
Hae Jin Hwang ◽  
Jae Hyun Shim ◽  
Nam Hee Cho ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Light Emission ◽  
Sno2 Nanostructures ◽  
Thermal Heating ◽  
X Ray Diffraction ◽  
Rutile Structure ◽  
X Ray ◽  
Si Substrates ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron

This study reported the fabrication of tin oxide (SnO2) nanostructures on Co-coated Si substrates by the thermal heating of Sn powders. The microstructures and morphologies of the resultant nanostructures were studied by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and scanning electron microscopy (SEM). The product mainly comprised the tangled nanowires with average diameters in the range of 50-180 nm. The nanostructures were single-crystalline rutile structure of SnO2. The PL measurement with the Gaussian fitting exhibited visible light emission bands centered at 576 nm and 638 nm, respectively. We have discussed the possible growth mechanism of the nanostructures.

First AlGaN Free-Standing Wafers

2003 ◽  
Vol 764 ◽  
Author(s):  
Yu.V. Melnik ◽  
V.A. Soukhoveev ◽  
K.V. Tsvetkov ◽  
V.A. Dmitriev
Keyword(s):  
Single Crystal ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Transmission Electron ◽  
Temperature Development ◽  
Intense Luminescence ◽  
Uv Emitters ◽  
First Time

AbstractSingle crystal AlGaN bulk materials have been fabricated, for the first time. AlGaN thick (up to 0.6 mm) layers were grown by hydride vapor phase epitaxy on SiC substrates. The substrates were removed resulting in free-standing AlGaN wafers up to 0.5 inch in diameter. Fabricated AlGaN wafers were investigated by x-ray diffraction, transmission electron microscopy (TEM), and cathodoluminescence. X-ray diffraction and TEM studies confirmed single crystal structure of grown material. Based on x-ray diffraction results, AlN concentration in grown material was estimated of about 35 mol.%. Cathodoluminescence measurements demonstrated a number of peaks in UV spectral region with the most intense luminescence at a wavelength of about 325 nm (100 K). The wafers demonstrated n-type conductivity with electron concentration in the 1017 cm-3 range at room temperature. Development of AlGaN substrates with controlled alloy composition may lead to stress-free device epitaxial structures for AlGaN-based transistors and UV emitters and sensors.

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