scholarly journals Synthesis and Properties of Epitaxial Thin Films of c-axis Oriented Metastable Four-Layered Hexagonal BaRuO3

1999 ◽  
Vol 602 ◽  
Author(s):  
M. K. Lee ◽  
C. B. Eom ◽  
W. Tian ◽  
X. Q. Pan ◽  
M. C. Smoak ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Room Temperature ◽  
Layered Compounds ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Novel Device ◽  
Transmission Electron ◽  
Device Applications

AbstractWe have grown epitaxial thin films of metastable four-layered hexagonal (4H) BaRuO3 on (111) SrTiO3 by 90° off-axis sputtering techniques. X-ray diffraction and transmission electron microscopy experiments reveal that the films are single crystals of c-axis 4H structures with an inplane epitaxial arrangement of BaRuO3 [2110] // SrTiO3 [110]. Smooth multilayer growth has been observed in these films with a step height equaling the size of half unit cell. In-plane resistivity of the films is metallic, with a room temperature value of about 810µΩ-cm and slightly curved temperature dependence. Their magnetic susceptibility is paramagnetic. The metastable layered compounds can be very useful for understanding new solid-state phenomena and novel device applications.

FORMATION AND MICROSTRUCTURE OF (105)-ORIENTED EPITAXIAL THIN FILMS OF YBa2Cu3O7-δ

1997 ◽  
Vol 04 (04) ◽  
pp. 679-685
Author(s):  
Y. YANG ◽  
J. GAO ◽  
T. C. CHUI
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Substrate Surface ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Strong Anisotropy ◽  
X Ray ◽  
Transmission Electron ◽  
Stepped Surface ◽  
Means Of Transmission

The formation and microstructure of the YBa 2 Cu 3 O 7-δ thin films grown on (305) SrTiO 3 substrates have been studied by means of transmission electron microscopy, X-ray diffraction analysis and scanning electron microscopy. YBa 2 Cu 3 O 7-δ was epitaxially grown on the stepped surface of such tilted substrates with an angle of 31° between its c axis and the substrate surface normal, forming the (105)-oriented films. A common feature of this kind of films is that small antidomains are nucleated in the initial growing stage. However, the further growth of these antidomains is depressed by the growth of YBa 2 Cu 3 O 7-δ with the desired orientation, leading to the formation of a single domain film. The surface of the (105) YBa 2 Cu 3 O 7-δ films is significantly rougher than that of c axis films but smoother than that of some other tilted films. Strong anisotropy of the transport properties has also been found in the [010] and [Formula: see text] directions of the (105) YBa 2 Cu 3 O 7-δ films.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Synthesis and Photoluminescence Properties of Novel SnO2 Zigzag Nanoribbons

2010 ◽  
Vol 97-101 ◽  
pp. 4213-4216
Author(s):  
Jian Xiong Liu ◽  
Zheng Yu Wu ◽  
Guo Wen Meng ◽  
Zhao Lin Zhan
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Ceramic Boat

Novel single-crystalline SnO2 zigzag nanoribbons have been successfully synthesized by chemical vapour deposition. Sn powder in a ceramic boat covered with Si plates was heated at 1100°C in a flowing argon atmosphere to get deposits on a Si wafers. The main part of deposits is SnO2 zigzag nanoribbons. They were characterized by means of X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM observations reveal that the SnO2 zigzag nanoribbons are almost uniform, with lengths near to several hundred micrometers and have a good periodically tuned microstructure as the same zigzag angle and growth directions. Possible growth mechanism of these zigzag nanoribbons was discussed. A room temperature PL spectrum of the zigzag nanoribbons shows three peaks at 373nm, 421nm and 477nm.The novel zigzag microstructures will provide a new candidate for potential application.

New method for the production of bulk amorphous materials of Nd–Fe–B alloys

2005 ◽  
Vol 20 (3) ◽  
pp. 563-566 ◽  
Author(s):  
Tetsuji Saito ◽  
Hiroyuku Takeishi ◽  
Noboru Nakayama
Keyword(s):  
Electron Microscopy ◽  
Amorphous Materials ◽  
Room Temperature ◽  
Amorphous Structure ◽  
X Ray Diffraction ◽  
Bulk Materials ◽  
X Ray ◽  
Transmission Electron ◽  
Melt Spun ◽  
Melt Spun Ribbons

We report a new compression shearing method for the production of bulk amorphous materials. In this study, amorphous Nd–Fe–B melt-spun ribbons were successfully consolidated into bulk form at room temperature by the compression shearing method. X-ray diffraction and transmission electron microscopy studies revealed that the amorphous structure was well maintained in the bulk materials. The resultant bulk materials exhibited the same magnetic properties as the original amorphous Nd–Fe–B materials.

Limitations to the use of Sb as a Surfactant During SiGe MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Quantum Well ◽  
Photoelectron Spectroscopy ◽  
Surface Coverage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Alloy Concentration

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

Room Temperature Self-Annealing of Electroplated and Sputtered Copper Films

1999 ◽  
Vol 562 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Copper Film ◽  
Copper Films ◽  
Organic Additives ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electroplated Copper ◽  
Effect Of Copper

ABSTRACTSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.

TEM Study of FePt and FePt:C/FePt Composite Double-Layered Thin Films

2013 ◽  
Vol 275-277 ◽  
pp. 1952-1955
Author(s):  
Ling Fang Jin ◽  
Xing Zhong Li
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Magnetic Properties ◽  
Composite Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

New functional nanocomposite FePt:C thin films with FePt underlayers were synthesized by noneptaxial growth. The effect of the FePt layer on the ordering, orientation and magnetic properties of the composite layer has been investigated by adjusting FePt underlayer thickness from 2 nm to 14 nm. Transmission electron microscopy (TEM), together with x-ray diffraction (XRD), has been used to check the growth of the double-layered films and to study the microstructure, including the grain size, shape, orientation and distribution. XRD scans reveal that the orientation of the films was dependent on FePt underlayer thickness. In this paper, the TEM studies of both single-layered nonepitaxially grown FePt and FePt:C composite L10 phase and double-layered deposition FePt:C/FePt are presented.

scholarly journals A Novel X-Ray Radiation Sensor Based on Networked SnO2 Nanowires

2019 ◽  
Vol 9 (22) ◽  
pp. 4878 ◽  
Author(s):  
Jae-Hun Kim ◽  
Ali Mirzaei ◽  
Hyoun Woo Kim ◽  
Hong Joo Kim ◽  
Phan Quoc Vuong ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Low Cost ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Radiation Sensor ◽  
Sno2 Nanowires ◽  
Radiation Sensors

X-Ray radiation sensors that work at room temperature are in demand. In this study, a novel, low-cost real-time X-ray radiation sensor based on SnO2 nanowires (NWs) was designed and tested. Networked SnO2 NWs were produced via the vapor–liquid–solid technique. X-ray diffraction (XRD), transmission electron microscopy (TEM) and field emission scanning electron microscopy (SEM) analyses were used to explore the crystallinity and morphology of synthesized SnO2 NWs. The fabricated sensor was exposed to X-rays (80 kV, 0.0–2.00 mA) and the leakage current variations were recorded at room temperature. The SnO2 NWs sensor showed a high and relatively linear response with respect to the X-ray intensity. The X-ray sensing results show the potential of networked SnO2 NWs as novel X-ray sensors.

Microstructure Characterization of Si/C Multilayer Thin Films

2013 ◽  
Vol 743-744 ◽  
pp. 910-914
Author(s):  
Ting Han ◽  
Geng Rong Chang ◽  
Yun Jin Sun ◽  
Fei Ma ◽  
Ke Wei Xu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Transmission Electron ◽  
Twin Defects ◽  
Modulation Ratio

Si/C multilayer thin films were prepared by magnetron sputtering and post-annealing in N2 atmosphere at 1100 for 1h. X-ray diffraction (XRD), Raman scattering and high-resolution transmission electron microscopy (HRTEM) were applied to study the microstructures of the thin films. For the case of Si/C modulation ratio smaller than 1,interlayer diffusion is evident, which promotes the formation of α-SiC during thermal annealing. If the modulation ratio is larger than 1, the Si sublayers are partially crystallized, and the thicker the Si sublayers are, the crystallinity increases. To be excited, brick-shaped nc-Si is directly observed by HRTEM. The brick-shaped nc-Si appears to be more regular near the Si (100) substrate but with twin defects. The results are instructive in the application of solar cells.

scholarly journals Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

2017 ◽  
Vol 2017 ◽  
pp. 1-4 ◽  
Author(s):  
Swati Arora ◽  
Vivek Jaimini ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Bismuth Telluride ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

Sign in / Sign up

Export Citation Format

Share Document