Solid-State Field-Controlled Electron Emission: An alternative to thermionic and field-emission

2000 ◽  
Vol 621 ◽  
Author(s):  
Vu Thien Binh ◽  
J.P. Dupin ◽  
P. Thevenard ◽  
D. Guillot ◽  
J.C. Plenet
Keyword(s):  
Solid State ◽  
Field Emission ◽  
Electron Emission ◽  
Sol Gel ◽  
Wide Band ◽  
Semiconductor Layer ◽  
Metallic Surface ◽  
Wide Band Gap ◽  
Cold Cathodes ◽  
Vacuum Microelectronics

ABSTRACTIn the solid-state field-controlled emitter (SSE), the emission barrier, which is the factor of utmost importance for surface electron emission, is tailored by a controlled extrinsic parameter like the injected space charge located near the surface. This is done by depositing an ultra-thin wide band-gap semiconductor layer on a metallic surface. It is an alternative approach to the thermionic or field emission for which the work function value is intrinsic to the material used. The emission current measurements from the SSE cold cathodes show stable emission, at low applied field (≈50 V/μm) and in poor vacuum (≈10−7 Torr). The new emission mechanism has been modeled, the calculations and the theoretical analysis confirm the experimental results. The fabrication of the SSE, either by a sputter deposition in vacuum or by a sol-gel technique, meets most of the demands specific to high throughput fabrication of cold cathodes with large emitting area dedicated to applications in vacuum microelectronics.

Wide band gap materials for field emission devices

1997 ◽  
Vol 15 (3) ◽  
pp. 1733-1738 ◽  
Author(s):  
V. V. Zhirnov ◽  
G. J. Wojak ◽  
W. B. Choi ◽  
J. J. Cuomo ◽  
J. J. Hren
Keyword(s):  
Band Gap ◽  
Field Emission ◽  
Wide Band ◽  
Wide Band Gap ◽  
Field Emission Devices

Electron field emission from wide band-gap semiconductors (GaN)

2009 ◽  
Author(s):  
V. Litovchenko ◽  
A. Grygoriev ◽  
A. Evtukh ◽  
O. Yilmazoglu ◽  
H. Hartnagel ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Emission ◽  
Wide Band ◽  
Electron Field Emission ◽  
Wide Band Gap ◽  
Electron Field ◽  
Wide Band Gap Semiconductors

Thermionic FEEM, PEEM and I/V Measurements of N-Doped CVD Diamond Surfaces

2000 ◽  
Vol 621 ◽  
Author(s):  
F.A.M. Köck ◽  
J.M. Garguilo ◽  
B. Brown ◽  
R.J. Nemanich
Keyword(s):  
Gas Phase ◽  
Field Emission ◽  
Electron Emission ◽  
Low Temperatures ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Exponential Dependence ◽  
Diamond Surfaces ◽  
Cold Cathodes ◽  
Thermionic Field Emission

ABSTRACTImaging of field emission and photoemission from diamond surfaces is accomplished with a high resolution photo-electron emission microscope (PEEM). Measurements obtained as a function of sample temperature up to 1000°C display thermionic field emission images (TFEEM). The system can also record the emission current versus applied voltage. N-doped diamond films have been produced by MPCVD with a N/C gas phase ratio of 48. The surfaces display uniform emission in PEEM at all temperatures. No FEEM images are detectable below 500°C. At ∼680°C the T-FEEM and PEEM images are nearly identical in intensity and uniformity. This is to be contrasted with other carbon based cold cathodes in which the emission is observed from only a low density of highly emitting sites. The I/V measurements obtained from the N-doped films in the T-FEEM configuration show a component that depends linearly on voltage at low fields. At higher fields, an approximately exponential dependence is observed. At low temperatures employed (<700°C), the results indicate a thermionic component to the emitted current.

Electron Diffusion in ZnO Nanomaterial: An Ac Impedance Investigation

2011 ◽  
Vol 312-315 ◽  
pp. 393-398
Author(s):  
Roshidah Rusdi ◽  
Norlida Kamarulzaman ◽  
Mohamed Nor Sabirin ◽  
Zurina Osman ◽  
Azilah Abd Rahman
Keyword(s):  
Sol Gel ◽  
Wide Band ◽  
Ac Impedance ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
Electron Diffusion ◽  
Electron Conduction ◽  
Diffusion Characteristics ◽  
Zno Nanomaterials ◽  
Electrical Components

ZnO is a wide band gap semiconductor with many applications such as in solar cells, varistors, and other electrical components. The ZnO material was synthesized using a sol-gel method. The material was characterized using X-Ray diffraction (XRD) and scanning electron microscopy (SEM). The material is pure and single phase. Electron conduction in ZnO nanomaterials was done using alternating current (ac) impedance. The frequency ranges of the measurements used were 1x 10-3 Hz to 1x 106 Hz and the ac impedance measurements were done within a temperature range of 60oC to 100oC. Nyquist plots were drawn and bulk resistances were obtained. Subsequently, conductivity values were calculated and the diffusion characteristics were obtained. From further analysis of the conductivities with temperature, the diffusion of electrons in the material was studied. It was found that the conductivity increased with the increase of temperature which meant that the rate of diffusion of the electrons through the materials also increased. An Arrhenius relation was concluded for the electron diffusion in the ZnO nanomaterials.

scholarly journals β-Ga2O3 Used as a Saturable Absorber to Realize Passively Q-Switched Laser Output

2021 ◽  
Author(s):  
Baizhong Li ◽  
Qiudi Chen ◽  
Peixiong Zhang ◽  
Ruifeng Tian ◽  
Lu Zhang ◽  
...  
Keyword(s):  
Solid State ◽  
Maximum Output Power ◽  
Wide Band ◽  
Output Coupling ◽  
Maximum Output ◽  
Wide Band Gap ◽  
Saturable Absorbers ◽  
Maximum Pulse Energy ◽  
First Time ◽  
State 1

&beta;-Ga2O3 crystal have attracted great attentions in the fields of photonics and photoelectronics because of its ultra wide-band gap and high thermal conductivity. Here, pure &beta;-Ga2O3 crystal was successfully grown by optical floating zone (OFZ) method, and used as saturable absorbers to realize a passively Q-switched all-solid-state 1&mu;m laser for the first time. By placing the as-grown &beta;-Ga2O3 crystal into the resonator of Nd:GYAP solid-state laser, a Q-switched pulses at the center wavelength of 1080.4 nm are generated under a output coupling of 10%. The maximum output power is 191.5 mW while the shortest pulse width is 606.54 ns, and the maximum repetition frequency is 344.06 kHz. The maximum pulse energy and peak power are 0.567 &mu;J and 0.93 W, respectively. Our experimental results show that &beta;-Ga2O3 crystal has great potential in the development of all-solid-state 1&mu;m pulsed laser.

scholarly journals Colour centre generation in diamond for quantum technologies

Nanophotonics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1889-1906 ◽  
Author(s):  
Jason M. Smith ◽  
Simon A. Meynell ◽  
Ania C. Bleszynski Jayich ◽  
Jan Meijer
Keyword(s):  
Solid State ◽  
Ion Implantation ◽  
Electron Irradiation ◽  
Research Effort ◽  
Wide Band ◽  
Colour Centre ◽  
Wide Band Gap ◽  
Colour Centres ◽  
Delta Doping ◽  
The Subject

AbstractEffective methods to generate colour centres in diamond and other wide band-gap materials are essential to the realisation of solid state quantum technologies based on such systems. Such methods have been the subject of intensive research effort in recent years. In this review, we bring together the various techniques used in the generation and positioning of colour centres in diamond: ion implantation, delta-doping, electron irradiation, laser writing and thermal annealing. We assess the roles and merits of each of these techniques in the formation of colour centres for different quantum technologies and consider future combinations of the techniques to meet the requirements of the most demanding applications.

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