Pulsed Laser Deposition of Epitaxial SrVO3 Films on (100)LaAlO3 and (100)Si

2000 ◽  
Vol 623 ◽  
Author(s):  
P.W. Yip ◽  
K.H. Wong
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Spectroscopic Studies ◽  
Laser Deposition ◽  
X Ray ◽  
Si Substrates ◽  
Post Annealing ◽  
Ambient Oxygen ◽  
Relationship Of

AbstractThin films of SrVO3 have been grown on (100)LaAlO3 and TiN buffered (100)Si substrates by pulsed laser deposition. The films were deposited in temperature range of 450°C – 750°C and under ambient oxygen pressure between 101−6 and 101−2 Torr. Their structural properties were characterized using a four-circle x-ray diffractometer. High quality SrVO3 films were obtained at growth temperatures above 500°C without post annealing. Heteroepitaxial relationship of < 100 >SrVo3 ∥ < 100 >LaAOl3 and <100>SrVo3∥ < 100 >TiN ∥ < 100 >Si were observed for films deposited at ≤ 550°C. X-ray photoelectron spectroscopic studies of the films suggest that the vanadium is mainly tetravalent and pentavalent. Charge transport measurements show that the films vary from semiconducting to highly conducting for different growth conditions. Resistivity of a few micro-ohm cm was recorded for some of the epitaxial SrVO3 films.

The Optical and Electrical Properties of SiOx(x<2) Thin Films Prepared by Pulsed Laser Deposition Technique

2007 ◽  
Vol 997 ◽  
Author(s):  
Byoung Youl Park ◽  
Sol Lee ◽  
Chang Hyun Bae ◽  
Seung Min Park ◽  
Kyoungwan Park
Keyword(s):  
Pulsed Laser Deposition ◽  
Crystalline Silicon ◽  
Quantum Confinement Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Post Annealing ◽  
Transmission Electron ◽  
Transmission Electron Microscope Analysis ◽  
Electron Microscope Analysis

AbstractSiOx (x<2) films were deposited in an O2 atmosphere using Si target in a pulsed laser deposition system. Post-annealing process was employed in an O2 atmosphere to form the nanometer-sized Si crystallites embedded in the SiO2 films. The transmission electron microscope analysis shows the existence of crystalline silicon nano-dots with diameters ranging from 2 to 4 nm. Also, the clear separation of Si and SiO2 phases can be seen in the X-ray photoemission spectra. Photoluminescence peak from the annealed films was obtained, which is attributed to the quantum confinement effect of the Si nano-dots. C-V measurements of the metal-oxide-silicon (MOS) structure containing the silicon nano-dots in the oxide layer were performed to investigate the charging/discharging behavior of the silicon nano-dots. The maximum program window of the MOS was measured to be4.1V under ±5V sweep.

ZrC Thin Films Grown by Pulsed Laser Deposition

2003 ◽  
Vol 780 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Region ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Crystalline Films

AbstractZrC thin films were grown on Si substrates by the pulsed laser deposition (PLD) technique. X- ray photoelectron spectroscopy, x-ray diffraction and reflectivity, variable angle spectroscopic ellipsometry, and four point probe measurements were used to investigate the composition, density, thickness, surface morphology, optical and electrical properties of the grown structures. It has been found that crystalline films could be grown only by using fluences above 6 J/cm2 and substrate temperatures in excess of 500 °C. For a fluence of 10 J/cm2 and a substrate temperature of 700 °C, highly (100)-textured ZrC films exhibiting a cubic structure (a=0.469 nm) and a density of 6.7 g/cm3 were deposited. The use of a low-pressure atmosphere of C2H2 had a beneficial effect on crystallinity and stoichiometry of the films. All films contained high levels of oxygen contamination, especially in the surface region, because of the rather reactive nature of Zr atoms.

The effect of target crystallography on the growth of Pb(Mg1/3Nb2/3)O3 thin films using pulsed laser deposition

1999 ◽  
Vol 14 (6) ◽  
pp. 2355-2358 ◽  
Author(s):  
M. H. Corbett ◽  
G. Catalan ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Lead Magnesium

Pulsed laser deposition has been used to make two sets of lead magnesium niobate thin films grown on single-crystal h100j MgO substrates. One set was fabricated using a perovskite-rich target while the other used a pyrochlore-rich target. It was found that the growth conditions required to produce almost 100% perovskite Pb(Mg1/3Nb2/3)O3 (PMN) films were largely independent of target crystallography. Films were characterized crystallographically using x-ray diffraction and plan view transmission electron microscopy, chemically using energy dispersive x-ray analysis, and electrically by fabricating a planar thin film capacitor structure and monitoring capacitance as a function of temperature. All characterization techniques indicated that perovskite PMN thin films had been successfully fabricated.

Heteroepitaxial Growth of Cubic Boron Nitride on Silicon

1992 ◽  
Vol 242 ◽  
Author(s):  
G. L. Doll ◽  
T. A. Perry ◽  
J. A. Sell ◽  
C. A. TAYLORS ◽  
R. Clarke
Keyword(s):  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Critical Value ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Present Evidence ◽  
X Ray ◽  
Si Substrates

ABSTRACTNew x-ray diffraction measurements performed on bonm nitride films deposited by pulsed excimer laser deposition are presented. The x-ray data, taken with both a molybdenum rotating anode source and synchrotron radiation, indicate that the epitaxial cBN films are ≤ 200 Å thick. We also report the successful growth of oriented crystalline diamond on the (001) surface of cBN/Si substrates using the method of pulsed laser deposition. X-ray diffraction measurements indicate that the diamond layer is 200 Å thick with a lattice constant of 3.56 Å. The structures of metastable films (cBN and diamond) are very sensitive to growth conditions: we present evidence that an epitaxial-crystalline to incoherent phase transition occurs when the thickness of the films exceeds a critical value (∼ 200 Å for our present growth conditions).

Effects of Ambient Pressure on the Structural and Magnetic Properties of Bismuth Ferrite Nanoparticles Prepared by Pulsed Laser Deposition (PLD)

2012 ◽  
Vol 722 ◽  
pp. 53-60
Author(s):  
Ying Bang Yao ◽  
Bei Zhang ◽  
Long Chen ◽  
Yang Yang
Keyword(s):  
Magnetic Properties ◽  
Pulsed Laser Deposition ◽  
Ambient Pressure ◽  
Bismuth Ferrite ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ferromagnetic Behavior ◽  
Deposition Pressure ◽  
Si Substrates ◽  
Ambient Oxygen

Nanoparticles of bismuth ferrite (BiFeO3) were fabricated by high-pressure pulsed laser deposition method (PLD) on Pt-coated Si substrates. Effects of the ambient oxygen pressure during deposition (from 1 Torr to 15 Torr) were studied with respect to the microstructures and magnetic properties of the samples. It was found that as the pressure is higher than 5 Torr isolated nanoparticles are formed and the size of these nanoparticles decreases with the deposition pressure. All the nanoparticles exhibit ferromagnetic behavior and the magnetic coercive filed decreases with the particle size.

Study of Nanostructure Inclusion Effects on the Thermoelectric Behavior of Ca3Co4O9 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 1267 ◽  
Author(s):  
Evan Lyle Thomas ◽  
Xueyan Song ◽  
Yonggao Yan ◽  
Joshua Martin ◽  
Winnie Wong-Ng ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Factor Α ◽  
Scanning Electron

AbstractThe influence of incorporating nanoparticulate additions into Ca3Co4O9 (CCO) thin films prepared by pulsed laser deposition using composite targets of CCO and CCO + 3wt% BaZrO3 (BZO) on Si and LaAlO3 substrates is investigated. X-ray data and high-resolution scanning electron microscopy reveal preferred c-axis orientation of the films deposited on Si substrates with the formation of nanoparticles between ∼ 10 – 50 nm. Preliminary thermoelectric behavior shows an enhancement of the power factor α2/ρ at room temperature. The microstructure and thermoelectric behavior of the CCO films are compared to the BZO-doped films.

Reactive Pulsed Laser Deposition of Microcrystalline Ge-based Thin Films

2003 ◽  
Vol 762 ◽  
Author(s):  
Matthew R. Wills ◽  
Ruth Shinar ◽  
Alan P. Constant
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Degree Of Crystallinity ◽  
X Ray ◽  
Starting Point ◽  
Crystalline Films

AbstractPulsed laser deposition (PLD) was used to grow microcrystalline thin films of germanium (Ge) and Ge-carbon (Ge,C) alloys on fused quartz and silicon substrates at substrate temperatures 25°C ≤ Ts ≤ 325°C. The films were analyzed structurally with x-ray diffraction (XRD), optically, electrically with four-point probe measurements, and chemically with x-ray photoelectron spectroscopy (XPS). XRD results displayed a varying degree of crystallinity, with the most crystalline films obtained at Ts > 150°C. The resistivity of the Ge films decreased with increasing temperature, displaying a significant decrease for the films deposited at Ts ≥ 230°C. The growth conditions for Ge films served as a starting point for low-temperature deposition of Ge,C alloys with up to 5% C. The effects of Ts and carbon concentration on film properties are discussed.

Aluminum Nitride Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition on Si Substrates

1997 ◽  
Vol 468 ◽  
Author(s):  
M. Okamoto ◽  
T. Ogawa ◽  
Y. Mori ◽  
T. Sasaki
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Atomic Ratio ◽  
Laser Deposition ◽  
X Ray ◽  
Si Substrates ◽  
High Laser ◽  
High Laser Energy

ABSTRACTThe smooth and highly oriented AlN films were obtained using pulsed laser deposition from sintered AlN target in a nitrogen ambient. The XRD investigation revealed that highly oriented AlN thin films along the c-axis (AlN (0002)) normal to the substrate were obtained both on Si(111) and on Si(100) substrates. The (0002) x-ray peak width became narrower with increasing substrate temperature. The CL investigation showed that AlN films at high laser energy density (Ed) indicated CL peak at shorter wavelength (306nm) than that at low Ed (394nm). N/Al atomic ratio in AlN films grown at high Ed also increased as comparison with the films grown at low Ed.

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