Heteroepitaxial Growth of Cubic Boron Nitride on Silicon

1992 ◽  
Vol 242 ◽  
Author(s):  
G. L. Doll ◽  
T. A. Perry ◽  
J. A. Sell ◽  
C. A. TAYLORS ◽  
R. Clarke
Keyword(s):  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Critical Value ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Present Evidence ◽  
X Ray ◽  
Si Substrates

ABSTRACTNew x-ray diffraction measurements performed on bonm nitride films deposited by pulsed excimer laser deposition are presented. The x-ray data, taken with both a molybdenum rotating anode source and synchrotron radiation, indicate that the epitaxial cBN films are ≤ 200 Å thick. We also report the successful growth of oriented crystalline diamond on the (001) surface of cBN/Si substrates using the method of pulsed laser deposition. X-ray diffraction measurements indicate that the diamond layer is 200 Å thick with a lattice constant of 3.56 Å. The structures of metastable films (cBN and diamond) are very sensitive to growth conditions: we present evidence that an epitaxial-crystalline to incoherent phase transition occurs when the thickness of the films exceeds a critical value (∼ 200 Å for our present growth conditions).

ZrC Thin Films Grown by Pulsed Laser Deposition

2003 ◽  
Vol 780 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Region ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Crystalline Films

AbstractZrC thin films were grown on Si substrates by the pulsed laser deposition (PLD) technique. X- ray photoelectron spectroscopy, x-ray diffraction and reflectivity, variable angle spectroscopic ellipsometry, and four point probe measurements were used to investigate the composition, density, thickness, surface morphology, optical and electrical properties of the grown structures. It has been found that crystalline films could be grown only by using fluences above 6 J/cm2 and substrate temperatures in excess of 500 °C. For a fluence of 10 J/cm2 and a substrate temperature of 700 °C, highly (100)-textured ZrC films exhibiting a cubic structure (a=0.469 nm) and a density of 6.7 g/cm3 were deposited. The use of a low-pressure atmosphere of C2H2 had a beneficial effect on crystallinity and stoichiometry of the films. All films contained high levels of oxygen contamination, especially in the surface region, because of the rather reactive nature of Zr atoms.

The effect of target crystallography on the growth of Pb(Mg1/3Nb2/3)O3 thin films using pulsed laser deposition

1999 ◽  
Vol 14 (6) ◽  
pp. 2355-2358 ◽  
Author(s):  
M. H. Corbett ◽  
G. Catalan ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Lead Magnesium

Pulsed laser deposition has been used to make two sets of lead magnesium niobate thin films grown on single-crystal h100j MgO substrates. One set was fabricated using a perovskite-rich target while the other used a pyrochlore-rich target. It was found that the growth conditions required to produce almost 100% perovskite Pb(Mg1/3Nb2/3)O3 (PMN) films were largely independent of target crystallography. Films were characterized crystallographically using x-ray diffraction and plan view transmission electron microscopy, chemically using energy dispersive x-ray analysis, and electrically by fabricating a planar thin film capacitor structure and monitoring capacitance as a function of temperature. All characterization techniques indicated that perovskite PMN thin films had been successfully fabricated.

Pulsed Laser Deposition of Epitaxial SrVO3 Films on (100)LaAlO3 and (100)Si

2000 ◽  
Vol 623 ◽  
Author(s):  
P.W. Yip ◽  
K.H. Wong
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Spectroscopic Studies ◽  
Laser Deposition ◽  
X Ray ◽  
Si Substrates ◽  
Post Annealing ◽  
Ambient Oxygen ◽  
Relationship Of

AbstractThin films of SrVO3 have been grown on (100)LaAlO3 and TiN buffered (100)Si substrates by pulsed laser deposition. The films were deposited in temperature range of 450°C – 750°C and under ambient oxygen pressure between 101−6 and 101−2 Torr. Their structural properties were characterized using a four-circle x-ray diffractometer. High quality SrVO3 films were obtained at growth temperatures above 500°C without post annealing. Heteroepitaxial relationship of < 100 >SrVo3 ∥ < 100 >LaAOl3 and <100>SrVo3∥ < 100 >TiN ∥ < 100 >Si were observed for films deposited at ≤ 550°C. X-ray photoelectron spectroscopic studies of the films suggest that the vanadium is mainly tetravalent and pentavalent. Charge transport measurements show that the films vary from semiconducting to highly conducting for different growth conditions. Resistivity of a few micro-ohm cm was recorded for some of the epitaxial SrVO3 films.

Epitaxial growth of skutterudite (CoSb3) thin films on (001) InSb by pulsed laser deposition

2001 ◽  
Vol 16 (9) ◽  
pp. 2467-2470 ◽  
Author(s):  
J. C. Caylor ◽  
M. S. Sander ◽  
A. M. Stacy ◽  
J. S. Harper ◽  
R. Gronsky ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Zinc Blende Structure

Heteroepitaxial growth of the cubic skutterudite phase CoSb3 on (001) InSb substrates was achieved by pulsed laser deposition using a substrate temperature of 270 °C and a bulk CoSb3 target with 0.75 at.% excess Sb. An InSb (a0 = 4 0.6478 nm) substrate was chosen for its lattice registry with the antimonide skutterudites (e.g., CoSb3 with a = 0 4 0.9034 nm) on the basis of a presumed 45° rotated relationship with the InSb zinc blende structure. X-ray diffraction and transmission electron microscopy confirmed both the structure of the films and their epitaxial relationship: (001)CoSb3 ∥ (001)InSb; [100]CoSb3 ∥ [110]InSb.

Heteroepitaxial Growth of In203 on Ysz (100) Single Crystal Surface

1999 ◽  
Vol 558 ◽  
Author(s):  
M. Orita ◽  
H. Ohta ◽  
H. Tanji ◽  
H. Hosono ◽  
H. Kawazoe
Keyword(s):  
Single Crystal ◽  
Crystal Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Full Width ◽  
Half Maximum ◽  
Single Crystal Surface ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTIn203 films were deposited on YSZ (001) single crystal surface at 800°C at an oxygen pressure of 14 Pa by pulsed laser deposition (PLD) method. A heteroepitaxial relationship between the film and the substrate was seen in TEM photographs and X-ray diffraction measurements. The w locking curve full width of half maximum (FWHM) of the In203 (004) x-ray diffraction was 0.06°. Film conductivities were ∼10 S/cm or less, while carriers on the order of lO18/cm3 were generated.

Structural and dielectric proper ties of CaCu3Ti4O12 thin film. deposited using laser ablation.

2003 ◽  
Vol 785 ◽  
Author(s):  
V. Gupta ◽  
R.R. Das ◽  
A. Dixit ◽  
P. Bhattacharya ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Vibrational Modes ◽  
X Ray Diffraction ◽  
Metal Insulator ◽  
X Ray ◽  
Si Substrates ◽  
Micro Raman Spectroscopy

ABSTRACTCaCu3Ti4O12 (CCT) thin films were deposited on Pt/TiO2/SiO2/Si substrates using pulsed laser deposition technique. During the thin films deposition, the substrate temperature was varied in the range of 700–800 °C with a constant O2 pressure of 200 mTorr. X-ray diffraction showed the polycrystalline nature of the films. The dielectric properties of the films were studied in metal insulator configuration. Films grown at higher substrate temperature exhibited highest value of dielectric permittivity (∼2200). Micro Raman spectroscopy was used to study the vibrational modes of the CCT thin films in comparison with the bulk ceramics.

Heteroepitaxial growth of TaN on MgO(001) and TiN(001)/Si(001) by pulsed laser deposition

2001 ◽  
Vol 672 ◽  
Author(s):  
H. Y. Cheung ◽  
K.H. Wong
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structural Quality ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plan View ◽  
Diffraction Profile ◽  
X Ray

ABSTRACTEpitaxial TaN(001) films have been successfully grown on MgO(001) single crystal and TiN(001) buffered Si(001) substrates by pulsed laser deposition method. Crystalline TaN layers of about 100 nm thick were deposited under a base pressure of 5 × 10−6 Torr and at substrate temperatures ranging from 500°C to 700°C. X-ray diffraction results suggested that stoichiometric TaN films with cube-on-cube <001>TaN∥<001>MgO heteroepitaxy are obtained in this temperature range. Plan-view and cross-sectional electron microscopy analysis revealed excellent structural quality and sharp interface boundary. TaN films grown on TiN(001) buffered Si(001), however, showed a mixture of TaNx (with x ≤ 1) components. Although the (001)-orientated TaN is always present prominently, the nitrogen deficient TaNx components are often co-existed in the films and show up as a broad peak in the X-ray diffraction profile. Stoichiometric and single phase TaN(001) films can only be obtained in a narrow temperature window at around 550oC and heteroepitaxial relation <001>TaN∥<001>TiN∥<001>Si has been demonstrated.

scholarly journals Каскадные солнечные элементы на основе наногетероструктур GaP/Si/Ge

2019 ◽  
Vol 45 (6) ◽  
pp. 7
Author(s):  
Л.С. Лунин ◽  
М.Л. Лунина ◽  
А.С. Пащенко ◽  
Д.Л. Алфимова ◽  
Д.А. Арустамян ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Energy Band ◽  
External Quantum Efficiency ◽  
Pulsed Laser ◽  
Energy Band Diagram ◽  
Laser Deposition ◽  
Band Diagram ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates

AbstractGaP/Si/Ge nanoheterostructures have been obtained using the method of pulsed laser deposition, and an energy band diagram of cascade solar cells based on these heterostructures were modeled. GaP and Ge nanolayers grown on Si substrates were studied by Raman spectroscopy and X-ray diffraction. Spectral dependences of the external quantum efficiency response of GaP/Si/Ge nanoheterostructures were determined.

EPITAXIAL GROWTH OF TRANSPARENT CONDUCTIVE OXIDES

2002 ◽  
Vol 16 (01n02) ◽  
pp. 173-180 ◽  
Author(s):  
HIROMICHI OHTA ◽  
MASAHIRO ORITA ◽  
MASAHIRO HIRANO ◽  
KAZUSHIGE UEDA ◽  
HIDEO HOSONO
Keyword(s):  
Electron Microscope ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Transparent Conductive Oxides ◽  
X Ray ◽  
Large Lattice ◽  
Film Substrate ◽  
Edge Dislocations

Transparent conductive oxides of ITO , ZnO , β- Ga 2 O 3, and CuGaO 2 and SrCu 2 O 2 were grown on single crystal substrates of α- Al 2 O 3 and YSZ by pulsed-laser deposition, and their crystallinity was evaluated by using high-resolution X-ray diffraction and electron microscope. Heteroepitaxial growth was observed in spite of relatively large lattice mismatches between film and substrate. A few disordered layers were generated automatically at film/substrate boundary, played buffer layer to suppress propagation of edge dislocations.

scholarly journals PLD Grown Polycrystalline Tungsten Disulphide (WS2) Films

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Salman Alfihed ◽  
Mohammad Hossain ◽  
Abdulaziz Alharbi ◽  
Ahmed Alyamani ◽  
Fahhad H. Alharbi
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tungsten Disulphide ◽  
Unfavorable Effect ◽  
Metallic Droplets

Polycrystalline WS2 films were grown by pulsed laser deposition (PLD) system at relatively low temperature. The main objective of this study is to optimize the growth conditions for polycrystalline WS2 films at relatively low temperature to use them for photovoltaics (PVs). Different growth conditions and substrates are used and examined systematically. It is found out that films grown on strontium titanate SrTiO3 (STO) substrate have the best structural properties when compared to other substrates examined in this work. X-ray diffraction and optical characterizations of these films reveal crystallographic growth and very promising optical properties for PVs. Furthermore, it was observed that higher growth temperature (>300°C) has an unfavorable effect on the layers by creating some tungsten metallic droplets.

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