Synthesis of Carbon, Silicon, and Boron-nitride Nanostructures via Microwave Plasma Enhanced Chemical Vapor Deposition

2000 ◽  
Vol 633 ◽  
Author(s):  
Hongtao Cui ◽  
Wei Liu ◽  
Brian R. Stoner

AbstractCarbon, silicon nitride and boron nitride nanostructures were synthesized using microwave plasma enhanced chemical vapor deposition. Both scanning and transmission electron microscopies and x-ray diffraction were used to observe the morphology and structures while energy dispersive x-ray was used to determine the composition of the nanostructured materials. Bamboo-like multiwalled carbon nanotube structures were observed while silicon nitride showed novel needle-like solid structures. All materials were deposited using a thin film iron catalyst seeded on either silicon with reactive plasma gases containing either a mixture of methane and ammonia or ammonia. A general discussion of the nucleation and growth mechanisms for the various materials will also be included.

2005 ◽  
Vol 480-481 ◽  
pp. 71-76 ◽  
Author(s):  
Jin Chun Jiang ◽  
Wen Juan Cheng ◽  
Yang Zhang ◽  
He Sun Zhu ◽  
De Zhong Shen

Carbon nitride films were grown on Si substrates by a microwave plasma chemical vapor deposition method, using mixture of N2, CH4 and H2 as precursor. Scanning electron microscopy shows that the films consisted of a large number of hexagonal crystallites. The dimension of the largest crystallite is about 3 µm. The X-ray photoelectron spectroscopy suggests that nitrogen and carbon in the films are bonded through hybridized sp2 and sp3 configurations. The X-ray diffraction pattern indicates that the major part of the films is composed of α-, β-, pseudocubic C3N4 and graphitic C3N4. The Raman peaks match well with the calculated Raman frequencies of α- and β-C3N4, revealing the formation of the α- and β-C3N4 phase.


1991 ◽  
Vol 250 ◽  
Author(s):  
Andrzej Badzian ◽  
Teresa Badzian

AbstractThis paper reviews the status of diamond heteroepitaxy approached by chemical vapor deposition and by physical methods. Reported are experiments with cubic boron nitride and nickel conducted with the help of microwave plasma chemical vapor deposition. X-ray diffraction data confirm diamond heteroepitaxy on the (111) faces of cubic boron nitride crystals. Heteroepitaxy on nickel was not demonstrated yet nevertheless suppression of graphite nucleation was achieved by formation of nickel hydride.


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