MBE Growth of GaN using NH3 and Plasma Sources

2000 ◽  
Vol 639 ◽  
Author(s):  
A.V. Sampath ◽  
A. Bhattacharyya ◽  
I. Sandeep ◽  
H.M. Ng ◽  
E. Iliopoulos ◽  
...  
Keyword(s):  
Comparative Study ◽  
Surface Reconstruction ◽  
Growth Temperature ◽  
Molecular Nitrogen ◽  
Catalytic Decomposition ◽  
Plasma Source ◽  
Mbe Growth ◽  
Plasma Sources ◽  
Plasma Activation ◽  
Aln Buffer

ABSTRACTWe report on a comparative study of the growth of GaN in an arsenic free MBE system using either the method of plasma activation of molecular nitrogen or catalytic decomposition of ammonia on a heated substrate. We find that while growth with a plasma source leads to smooth films only under Ga- rich conditions, growth with ammonia leads to smooth films under ammonia-rich conditions. In both cases we find a 2×2 surface reconstruction when using an AlN buffer, which is evidence that material grown with this buffer layer has the Ga-polarity. In the case of plasma growth we also investigated the use of a GaNbuffer and found that at the growth temperature the surface is unreconstructed, however it undergoes 3×3 reconstruction upon cooling to 300 °C. This observation is evidence that material grown on a GaN buffer has the N-polarity.

scholarly journals MBE Growth of Nitride-Arsenide Materials for long Wavelength Opto-electronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 474-480 ◽  
Author(s):  
Sylvia G. Spruytte ◽  
Christopher W. Coldren ◽  
Ann F. Marshall ◽  
Michael C. Larson ◽  
James S. Harris
Keyword(s):  
Quantum Wells ◽  
Molecular Nitrogen ◽  
Nitrogen Concentration ◽  
Plasma Source ◽  
Lattice Parameter ◽  
Nitrogen Plasma ◽  
Group V ◽  
Mbe Growth ◽  
Group Iii ◽  
Nitrogen Concentrations

Nitride-Arsenide materials were grown by molecular beam epitaxy (MBE) using a radio frequency (rf) nitrogen plasma. The plasma conditions that maximize the amount of atomic nitrogen versus molecular nitrogen were determined using the emission spectrum of the plasma. Under constant plasma source conditions and varying group III flux, the nitrogen concentration in the film is inversely proportional to the group III flux (i. e. the nitrogen sticking coefficient is unity). The relationship between nitrogen concentration in the film and lattice parameter of the film is not linear for nitrogen concentrations above 2.9 mole % GaN, indicating that some nitrogen is incorporated on other locations than the group V lattice sites. For films with these higher nitrogen concentrations, XPS indicates that the nitrogen exists in two configurations: a Gallium-Nitrogen bond and another type of nitrogen complex in which nitrogen is less strongly bonded to Gallium atoms. Annealing removes this nitrogen complex and allows some of the nitrogen to diffuse out of the film. Annealing also improves the crystal quality of GaAsN quantum wells.

Correlation of the MBE growth temperature, material quality, and performance of quantum cascade lasers

2013 ◽  
Vol 378 ◽  
pp. 614-617 ◽  
Author(s):  
G. Monastyrskyi ◽  
A. Aleksandrova ◽  
M. Elagin ◽  
M.P. Semtsiv ◽  
W.T. Masselink ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Quantum Cascade Lasers ◽  
Mbe Growth ◽  
Material Quality ◽  
Quantum Cascade ◽  
And Performance ◽  
Cascade Lasers

Effect of growth temperature of initial AlN buffer on the structural and optical properties of Al-rich AlGaN

2007 ◽  
Vol 307 (2) ◽  
pp. 289-293 ◽  
Author(s):  
M.Z. Peng ◽  
L.W. Guo ◽  
J. Zhang ◽  
N.S. Yu ◽  
X.L. Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Growth Temperature ◽  
Structural And Optical Properties ◽  
Aln Buffer

MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source

2001 ◽  
Vol 16 (5) ◽  
pp. 413-419 ◽  
Author(s):  
A E Zhukov ◽  
R Zhao ◽  
P Specht ◽  
V M Ustinov ◽  
A Anders ◽  
...  
Keyword(s):  
Plasma Source ◽  
Dc Plasma ◽  
Mbe Growth

Comparative Study of Three Nonthermal Plasma Sources against Causative Agents of Nosocomial Infections

2012 ◽  
Vol 2 (1-3) ◽  
pp. 141-149 ◽  
Author(s):  
Svetlana A. Ermolaeva ◽  
Oleg F. Petrov ◽  
Yurii S. Akishev ◽  
Viktor N. Vasilets ◽  
Elena V. Sysolyatina ◽  
...  
Keyword(s):  
Comparative Study ◽  
Nosocomial Infections ◽  
Nonthermal Plasma ◽  
Plasma Sources ◽  
Causative Agents

Growth and Characterization of GaN on Si(111)

1994 ◽  
Vol 339 ◽  
Author(s):  
A. Ohtani ◽  
K. S. Stevens ◽  
R. Beresford
Keyword(s):  
Growth Temperature ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Ion Density ◽  
Nitrogen Ion ◽  
Gan On Si ◽  
Aln Buffer

ABSTRACTWurtzite GaN films on AlN buffer layers were grown on Si (111) by electron cyclotron resonance microwave plasma assisted MBE (ECR-MBE). High resolution x-ray diffraction studies indicate that the mosaic disorder decreases with increasing growth temperature. The grain size is related to the growth temperature. The best (0002) diffraction peak full width at half maximum was 22 min. for a film 1.7 μm thick. Prominent exciton luminescence is observed at 3.46 eV at 10 K.The plasma I-V characteristics were measured with a Langmuir probe near the growth position. The nitrogen ion density has been extracted from the data, and is a strong function of the N2 flow rate, the microwave power and the aperture size of the ECR source. The crystal quality of AlN is strongly affected by the plasma conditions.

The Design and Application of a New Type of Instrument for Testing the Worn Surface of Casing Wear

2008 ◽  
Author(s):  
Jianchun Fan ◽  
Qiang Chen ◽  
Laibin Zhang ◽  
Dong Wen
Keyword(s):  
Comparative Study ◽  
Surface Reconstruction ◽  
Wear Mechanism ◽  
3D Surface Reconstruction ◽  
3D Surface ◽  
Testing Data ◽  
New Type ◽  
Casing Wear ◽  
The Comparative Study ◽  
Worn Surface

In this paper, a new kind of instrument used specially for testing the worn surface of casing was introduced, its structure and testing principle was further elaborated. Meanwhile, the testing data were also used for the 3D surface reconstruction of the worn area of casing. The comparative study with SEM pictures could tell that the instrument performed very well and is quite helpful in the observation of worn rejoin of casing; the conclusions drawn from the study could be applied in the research of wear mechanism.

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