Investigation of Irradiation Damage in Silicon Dioxide Polymorphs using Cathodoluminescence Microanalysis.

2000 ◽  
Vol 650 ◽  
Author(s):  
Marion A. Stevens-Kalceff
Keyword(s):  
Silicon Dioxide ◽  
Surface Topography ◽  
Electron Irradiation ◽  
Defect Structure ◽  
High Sensitivity ◽  
Wide Band ◽  
In Situ Monitoring ◽  
Irradiation Damage ◽  
Borosilicate Glasses ◽  
Pure Silica

ABSTRACTCathodoluminescence (CL) Microanalysis (spectroscopy and microscopy) provides unique high sensitivity, high spatial resolution information about the defect structure and distribution of defects in wide band gap materials and therefore is an ideal technique with which to investigate the microstructural processes induced by irradiation. CL microanalytical techniques allow the in situ monitoring and post irradiation assessment of electron irradiation induced damage. Changes in the defect structure and surface topography of electron irradiated silicon dioxide polymorphs and related silicates including pure crystal quartz, pure silica glasses, pure amorphous fused quartz and alkali-borosilicate glasses, have been investigated and compared using CL microanalysis and Scanning Probe Microscopy (SPM) techniques. CL and SPM evidence shows all specimens are sensitive to electron irradiation. CL evidence is consistent with the production and micro-segregation of irradiation induced defects. The observed damage is highly correlated with the electron irradiation induced changes in the surface topography of the investigated specimens.

Investigation of Irradiation Damage in Silicon Dioxide Polymorphs using Cathodoluminescence Microanalysis.

2000 ◽  
Vol 647 ◽  
Author(s):  
Marion A. Stevens-Kalceff
Keyword(s):  
Silicon Dioxide ◽  
Surface Topography ◽  
Electron Irradiation ◽  
Defect Structure ◽  
High Sensitivity ◽  
Wide Band ◽  
In Situ Monitoring ◽  
Irradiation Damage ◽  
Borosilicate Glasses ◽  
Pure Silica

AbstractCathodoluminescence (CL) Microanalysis (spectroscopy and microscopy) provides unique high sensitivity, high spatial resolution information about the defect structure and distribution of defects in wide band gap materials and therefore is an ideal technique with which to investigate the microstructural processes induced by irradiation. CL microanalytical techniques allow the in situ monitoring and post irradiation assessment of electron irradiation induced damage. Changes in the defect structure and surface topography of electron irradiated silicon dioxide polymorphs and related silicates including pure crystal quartz, pure silica glasses, pure amorphous fused quartz and alkali-borosilicate glasses, have been investigated and compared using CL microanalysis and Scanning Probe Microscopy (SPM) techniques. CL and SPM evidence shows all specimens are sensitive to electron irradiation. CL evidence is consistent with the production and micro-segregation of irradiation induced defects. The observed damage is highly correlated with the electron irradiation induced changes in the surface topography of the investigated specimens.

Cathodoluminescence Microanalysis of Electron Irradiation Damage in Wide Band Gap Materials

1998 ◽  
Vol 540 ◽  
Author(s):  
M.A. stevens Kalceff ◽  
M.R. Phillips ◽  
M. Toth ◽  
A.R. Moon ◽  
D.N. Jamieson ◽  
...  
Keyword(s):  
Band Gap ◽  
Electron Irradiation ◽  
Depth Resolution ◽  
Wide Band ◽  
In Situ Monitoring ◽  
Irradiation Damage ◽  
Wide Band Gap ◽  
Energetic Radiation ◽  
Defect Species

AbstractCathodoluminescence (CL) microanalysis (spectroscopy and microscopy) in an electron microscope enables both pre-existing and irradiation induced local variations in the bulk and surface defect structure of wide band gap materials to be characterized with high spatial (lateral and depth) resolution and sensitivity. CL microanalytical techniques allow the in situ monitoring of electron irradiation induced damage, the post irradiation assessment of damage induced by other energetic radiation, and the investigation of irradiation induced electromigration of mobile charged defect species. Electron irradiated silicon dioxide polymorphs and MeV H+ ion implanted Type Ila diamond have been investigated using CL microanalytical techniques.

Cathodoluminescence Investigation of Electron Irradiation Damage in Insulators.

1997 ◽  
Vol 3 (S2) ◽  
pp. 749-750
Author(s):  
M.A. Stevens Kalceff ◽  
M.R. Phillips ◽  
A.R. Moon
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Electron Irradiation ◽  
Defect Structure ◽  
Energetic Electron ◽  
Depth Resolution ◽  
Irradiation Damage ◽  
Resonance Spectroscopy ◽  
Structure Information ◽  
Complementary Techniques

Cathodoluminescence (CL) is the luminescent emission from a material which has been irradiated with electrons. Cathodoluminescence microanalysis (spectroscopy and microscopy) in an electron microscope complements the average defect structure information available from complementary techniques (e.g. Photoluminescence, Electron Spin Resonance spectroscopy). CL microanalysis enables both pre-existing and irradiation induced local variations in the bulk and surface defect structure to be characterized with high spatial (lateral and depth) resolution and sensitivity. This is possible as electron beam parameters such as the beam energy, may be varied to finely control the penetration depth of the incident electrons and hence the local volume of specimen probed.Irradiation with charged and neutral energetic radiation produces defects in radiation sensitive materials. The energetic electron beam in an electron microscope may also induce defects in the specimen. Cazaux has characterized the electric field produced by electron irradiation of a insulator with a conductive surface coating

Cathodoluminescence Microcharacterization of the Irradiation Sensitive Defect Structure of Amorphous Silicon Dioxide

1997 ◽  
Vol 3 (S2) ◽  
pp. 751-752
Author(s):  
M.A. Stevens Kalceff ◽  
M.R. Phillips ◽  
A.R. Moon
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Defect Structure ◽  
Gaussian Function ◽  
High Sensitivity ◽  
Normal Incidence ◽  
Host Lattice ◽  
Microscopy Imaging ◽  
Amorphous Silicon Dioxide ◽  
Quartz Glasses

Cathodoluminescence (CL) Microscopy (imaging) and Spectroscopy in a Scanning Electron Microscope enables high spatial resolution, high sensitivity detection of defect centers in materials. Cathodoluminescence microanalysis has been used to investigate the irradiation sensitive defect structure of Types I, II, III and IV amorphous silicon dioxide SiO2 (quartz and silica glasses). The CL experiments were performed in a JEOL JSM 35C SEM equipped with Oxford Instruments liquid N and liquid He cryogenic stages, and an Oxford Instruments MonoCL cathodoluminescence imaging and spectral analysis system. The observed CL emissions, were excited with a stationary electron beam at normal incidence and corrected for total instrument response. The corrected CL spectra were fitted with a multiparameter Gaussian function using a non linear least squares curve fitting algorithm and were identified with particular defect structures. The CL emission from high quality pure amorphous silica and quartz glasses is dominated by intrinsic processes (associated with the host lattice). See Table 1.

Electron irradiation‐induced changes in the surface topography of silicon dioxide

1996 ◽  
Vol 80 (8) ◽  
pp. 4308-4314 ◽  
Author(s):  
M. A. Stevens Kalceff ◽  
M. R. Phillips ◽  
A. R. Moon
Keyword(s):  
Silicon Dioxide ◽  
Surface Topography ◽  
Electron Irradiation ◽  
Induced Changes

Electron Irradiation Damage in Radiation-Resistant InP Solar Cells

1984 ◽  
Vol 23 (Part 1, No. 3) ◽  
pp. 302-307 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Chikao Uemura ◽  
Akio Yamamoto ◽  
Atsushi Shibukawa
Keyword(s):  
Solar Cells ◽  
Electron Irradiation ◽  
Irradiation Damage ◽  
Radiation Resistant

Effect of electron irradiation on defect structure of 6H–SiC grown by PVT method

2009 ◽  
Vol 45 (4-5) ◽  
pp. 402-406 ◽  
Author(s):  
M. Kozubal ◽  
P. Kamiński ◽  
R. Kozłowski ◽  
E. Tymicki ◽  
K. Grasza ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Defect Structure

Electron irradiation damage in austenitic stainless steels

1991 ◽  
Vol 179-181 ◽  
pp. 526-528 ◽  
Author(s):  
Jiguang Sun ◽  
Jiapu Qian ◽  
Zhuoyong Zhao ◽  
Jiming Chen ◽  
Zengyu Xu
Keyword(s):  
Electron Irradiation ◽  
Stainless Steels ◽  
Austenitic Stainless Steels ◽  
Irradiation Damage

High sensitivity, ultra-wide band divide-by-two circuit with frequency self-adaptive techniques

2011 ◽  
Vol 71 (1) ◽  
pp. 131-136
Author(s):  
N.-S. Mei ◽  
J. Fu ◽  
S.-L. Hao ◽  
Y.-M. Huang ◽  
Z.-L. Hong
Keyword(s):  
High Sensitivity ◽  
Wide Band ◽  
Ultra Wide Band ◽  
Adaptive Techniques ◽  
Self Adaptive

Nanocrystalline Phosphors for Lighting and Detection Applications

2010 ◽  
Vol 654-656 ◽  
pp. 1130-1133 ◽  
Author(s):  
Christopher J. Summers ◽  
Hisham M. Menkara ◽  
Richard A. Gilstrap ◽  
Mazen Menkara ◽  
Thomas Morris
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Shell Growth ◽  
Stokes Shift ◽  
Thermal Quenching ◽  
High Sensitivity ◽  
In Situ Monitoring ◽  
White Leds ◽  
Sensing Applications ◽  
Improved Stability

We report the development of new nanoparticle phosphors and quantum dot structures designed for applications to enhance the color rendering and efficiency of high brightness white LEDs, as well as for bio-sensing applications. The intrinsic problem of self-absorption, high toxicity, and high sensitivity to thermal quenching of conventional quantum dot systems has prevented their adoption to LED devices. Doped Cd-free quantum dots may circumvent these issues due to their distinct Stokes shift and improved stability at high temperature. We report on the modification of Mn-doped ZnSe/ZnS core-shell quantum dots for application to the (blue diode + yellow emitter) white LED system. Band gap tuning for 460 nm excitation, inorganic shell growth and in-situ monitoring for enhanced efficiency, and analysis of thermal stability will are reported.

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