P-channel Polycrystalline Silicon Thin Film Transistors on Steel Foil Substrates

2001 ◽  
Vol 664 ◽  
Author(s):  
Ming Wu ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Drain Current ◽  
Silicon Thin Film ◽  
Polysilicon Films ◽  
Source Voltage ◽  
Steel Substrates ◽  
Hydrogenated Amorphous

ABSTRACTWe fabricated self-aligned polycrystalline silicon (polysilicon) thin film transistors on flexible steel substrates. The polysilicon was formed by furnace crystallization of hydrogenated amorphous silicon at 950°C/20sec or 750°C/2min. The TFTs made from these polysilicon films have hole field effect mobilities in the linear regime of 22 cm2·V−1s−1 (950°C) and 14 cm2·V−1s−1 (750°C). The OFF current at 10 V drain-source voltage is 10−10A and the drain current ON/OFF ratio is ∼106.

Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740007
Author(s):  
Kai Liu ◽  
Yuan Liu ◽  
Yu-Rong Liu ◽  
Yun-Fei En ◽  
Bin Li
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Localized States ◽  
Silicon Thin Film ◽  
Linear Region ◽  
Channel Mobility ◽  
Source Voltage ◽  
P Type ◽  
Voltage Region

Channel mobility in the p-type polycrystalline silicon thin film transistors (poly-Si TFTs) is extracted using Hoffman method, linear region transconductance method and multi-frequency C-V method. Due to the non-negligible errors when neglecting the dependence of gate-source voltage on the effective mobility, the extracted mobility results are overestimated using linear region transconductance method and Hoffman method, especially in the lower gate-source voltage region. By considering of the distribution of localized states in the band-gap, the frequency independent capacitance due to localized charges in the sub-gap states and due to channel free electron charges in the conduction band were extracted using multi-frequency C-V method. Therefore, channel mobility was extracted accurately based on the charge transport theory. In addition, the effect of electrical field dependent mobility degradation was also considered in the higher gate-source voltage region. In the end, the extracted mobility results in the poly-Si TFTs using these three methods are compared and analyzed.

Compressive Stressed P-Channel Polycrystalline-Silicon Thin-Film Transistors for High Field-Effect Mobility

2015 ◽  
Vol 36 (8) ◽  
pp. 793-795 ◽  
Author(s):  
Jae Hyo Park ◽  
Ki Hwan Seok ◽  
Hyung Yoon Kim ◽  
Sol Kyu Lee ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
High Field ◽  
Field Effect Mobility ◽  
Silicon Thin Film

Field-Effect Conductance Activation Energy in Polycrystalline Silicon Thin-Film Transistors after Bias Stress

1996 ◽  
Vol 35 (Part 1, No. 4A) ◽  
pp. 2081-2084 ◽  
Author(s):  
Seo-Yoon Kim ◽  
Yoon-Ho Song ◽  
Kee-Soo Nam ◽  
Choochon Lee
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Silicon Thin Film ◽  
Bias Stress

Surface-Potential-Based Drain Current Model for Polycrystalline Silicon Thin-Film Transistors

2008 ◽  
Vol 47 (10) ◽  
pp. 7798-7802 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Tsuyoshi Kuzuoka ◽  
Yuji Kishida ◽  
Yoshiyuki Shimizu ◽  
Masaharu Kirihara ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Current Model ◽  
Drain Current ◽  
Silicon Thin Film
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