CHARACTERISTICS OF LITHIUM LANTHANUM TITANATE THIN FILMS MADE BY ELECTRON BEAM EVAPORATION FROM NANOSTRUCTURED La0.67-xLi 3xTiO3 TARGET

Bulk nanostructured perovskites of La0.67-xLi3xTiO3 (LLTO) were prepared by using thermally ball-grinding from compounds of La2O3, Li2CO3 and TiO2. From XRD analysis, it was found that LTTO materials were crystallized with nano-size grains of an average size of 30 nm. The bulk ionic conductivity was found strongly dependent on the Li+ composition, the samples with x = 0.11 (corresponding to a La0.56Li0.33TiO3 compound) have the best ionic conductivity, which is ca. 3.2 x 10-3 S/cm at room temperature. The LLTO amorphous films were made by electron beam deposition. At room temperature the smooth films have ionic conductivity of 3.5 x 10-5 S/cm and transmittance of 80%. The optical bandgap of the films was found to be of 2.3 eV. The results have shown that the perovskite La0.56Li0.33TiO3 thin films can be used for a transparent solid electrolyte in ionic battery and in all-solid-state electrochromic devices, in particular.

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Characterization of Nd:Y3Al5O12 Thin Films Prepared by Electron Beam Evaporation Deposition

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.320.150 ◽

2013 ◽

Vol 320 ◽

pp. 150-154

Author(s):

Hao Ren ◽

Qun Zeng ◽

Xi Hui Liang

Keyword(s):

Thin Films ◽

Electron Beam ◽

Room Temperature ◽

Electron Beam Evaporation ◽

Photoluminescence Spectra ◽

X Ray Diffraction ◽

X Ray ◽

Surface Morphologies ◽

Ingaas Detector

Nd:YAG thin films have been prepared on Si (100) substrates by electron beam evaporation deposition. The surface morphologies, crystalline phases and optical properties of the Nd:YAG thin films were characterized by x-ray diffraction, scanning electron microscopy, photoluminescence spectroscopy, and spectrophotometer. The crystallization of Nd:YAG thin films was improved after annealing at 1100 °C for 1 hour in vacuum. Excited by a Ti:sapphire laser at 808 nm, photoluminescence spectra of Nd:YAG thin films were measured at room temperature, and the transition of4F3/24I11/2of Nd3+in YAG in the region of 1064 nm were detected by a liquid nitrogen cooled InGaAs detector array.

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Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO2 thin films deposited by electron beam evaporation technique

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2013.12.025 ◽

2014 ◽

Vol 355 ◽

pp. 240-245 ◽

Cited By ~ 27

Author(s):

P. Mohanty ◽

D. Kabiraj ◽

R.K. Mandal ◽

P.K. Kulriya ◽

A.S.K. Sinha ◽

...

Keyword(s):

Thin Films ◽

Electron Beam ◽

Room Temperature ◽

Room Temperature Ferromagnetism ◽

Electron Beam Evaporation ◽

Tio2 Thin Films ◽

Electron Beam Evaporation Technique ◽

Evaporation Technique

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Electrochromic Properties of Lithium-Doped Tungsten Oxide Prepared by Electron Beam Evaporation

Coatings ◽

10.3390/coatings9030191 ◽

2019 ◽

Vol 9 (3) ◽

pp. 191 ◽

Cited By ~ 1

Author(s):

Jui-Yang Chang ◽

Ying-Chung Chen ◽

Chih-Ming Wang ◽

Wen-Nan Wang ◽

Chih-Yu Wen ◽

...

Keyword(s):

Electron Beam ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Cathode Materials ◽

Room Temperature ◽

Electron Beam Evaporation ◽

Electrochromic Devices ◽

Electrochromic Properties ◽

Coloration Efficiency ◽

Transmittance Change

In this study, xLi2O-(1−x)WO3 powders were mixed with WO3 and Li2O and pressed into target pellets to fabricate electrochromic films on indium tin oxide (ITO) glasses prepared by electron beam evaporation under the parameters of room temperature, and thicknesses of about 530 nm. It was expected that the amount of charge stored in the electrochromic devices (ECDs) could be enhanced by using the doping method in the cathode materials. The experimental results show that as the composition of Li0.18W0.82O2.6 powder was formed, the optimal characteristics of ECD can be obtained. In which, as a voltage of 3.5 V was applied on ECD, a transmittance change (ΔT%) of 53.1%, an optical density (ΔOD) of 0.502, an intercalation charge (Q) of 12.9 mC/cm2 and a coloration efficiency (η) of 41.6 cm2/C at a wavelength of 550 nm can be achieved. These results demonstrate that Li2O doping in WO3 films could effectively improve the coloration and electrochromic properties of ECD devices.

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Deposition of high k ZrO/sub 2/ thin films by high vacuum electron beam evaporation at room temperature

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) ◽

10.1109/icsict.2001.981486 ◽

2002 ◽

Author(s):

Ninglin Zhang ◽

Qing Wan ◽

Zhitang Song ◽

Qinwo Shen ◽

Chenglu Lin

Keyword(s):

Thin Films ◽

Electron Beam ◽

Room Temperature ◽

High Vacuum ◽

Electron Beam Evaporation ◽

High K

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Alloying and selenization of Cu-In stacked layers evaporated onto large areas

MRS Proceedings ◽

10.1557/proc-668-h8.2 ◽

2001 ◽

Vol 668 ◽

Cited By ~ 1

Author(s):

Raquel Caballero ◽

Cecilia Guillén ◽

Rocío Bayón

Keyword(s):

Thin Films ◽

Electron Beam ◽

Glass Substrate ◽

Room Temperature ◽

Xrd Analysis ◽

Preferential Orientation ◽

Chalcopyrite Structure ◽

Elemental Selenium ◽

The Mean ◽

Sequential Processes

ABSTRACTIn this work, Cu and In thin films, as precursors for CuInSe2 (CIS) formation, have been deposited on glass substrate up to 30 × 30 cm2 area using an electron beam evaporator in sequential processes. In order to obtain a similar global composition, three types of sequential processes of evaporation: A) Cu/In/Cu/In, B) Cu/In/Cu/In/Cu/In and C) In/Cu/In/Cu have been tested. As-grown thin films were studied at room temperature and after 120° C annealing. XRD analysis of these films showed mainly the CuIn2−x (0≤ × ≤ 1) phase at room temperature, and Cu11In9 after annealing at 120° C. After alloying, the films were selenized at temperature between 250° and 400° C in vacuum using elemental selenium vapour. XRD of the selenized thin films corresponding to In/Cu/In/Cu sequence and previously annealing at 120° C, showed the major presence of the polycrystalline chalcopyrite structure CuInSe2 with preferential orientation (112) plane at temperature as low as 250° C. From SEM studies and profilometer measurements a decrease in the mean roughness could be observed after annealing at 120° C. In contrast the resistivity of the films increased.

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Room-temperature epitaxial growth of CeO2(001) thin films on Si(001) substrates by electron beam evaporation

Applied Physics Letters ◽

10.1063/1.1351849 ◽

2001 ◽

Vol 78 (10) ◽

pp. 1361-1363 ◽

Cited By ~ 54

Author(s):

T. Ami ◽

Y. Ishida ◽

N. Nagasawa ◽

A. Machida ◽

M. Suzuki

Keyword(s):

Thin Films ◽

Electron Beam ◽

Epitaxial Growth ◽

Room Temperature ◽

Electron Beam Evaporation

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Chemistry, microstructure, and electrical properties at interfaces between thin films of platinum and alpha (6H) silicon carbide (0001)

Journal of Materials Research ◽

10.1557/jmr.1995.2336 ◽

1995 ◽

Vol 10 (9) ◽

pp. 2336-2342 ◽

Cited By ~ 18

Author(s):

L.M. Porter ◽

R.F. Davis ◽

J.S. Bow ◽

M.J. Kim ◽

R.W. Carpenter

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Electron Beam ◽

Electrical Properties ◽

Schottky Barrier ◽

Room Temperature ◽

Schottky Barrier Height ◽

Electron Beam Evaporation ◽

Leakage Currents ◽

Annealing Temperatures

Thin films (4-1000 Å) of Pt were deposited via UHV electron beam evaporation at room temperature on monocrystalline, n-type α (6H)-SiC(0001) substrates and examined in terms of chemistry, microstructure, and electrical properties. The as-deposited contacts were polycrystalline and showed excellent rectifying behavior with low ideality factors (n < 1.1) and leakage currents of 5 × 10−8 A/cm2 at −10 V. The Schottky barrier height increased from 1.06 eV before annealing to 1.26 eV after successive 20 min anneals at 450, 550, 650, and 750 °C. In addition, the leakage currents decreased to 2 × 10−8 A/cm2 at −10 V. Interfacial reactions were not observed at annealing temperatures below 750 °C; above this temperature, Pt2Si and C precipitates were identified in the reaction zone.

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