Transistors Built With ZrO2 And HfO2 Deposited From Nitratos

2001 ◽  
Vol 670 ◽  
Author(s):  
Stephen A. Campbell ◽  
Noel Hoilien ◽  
Tiezhong Ma ◽  
Fang Chen ◽  
Ryan Smith ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Oxides ◽  
Inversion Layer ◽  
Metal Nitrate ◽  
Fixed Charge ◽  
Electrical Performance ◽  
Interfacial Layers

ABSTRACTThe electrical performance of transistors built using thin films of the column IVB metal oxides ZrO2 and HfO2 deposited from their respective anhydrous metal nitrate precursors is presented. In contrast to earlier work on TiO2, which is thermodynamically unstable on silicon, ZrO2 and HfO2 form well-defined oxynitride interfacial layers and have a good interface with silicon with much less fixed charge. The inversion layer mobility for an HfO2 / SiOxNy / Si stack is comparable to that of a conventional SiOxNy/Si interface.

Carbon Monoxide Sensing Technologies

2021 ◽  
Keyword(s):  
Thin Films ◽  
Carbon Nanotubes ◽  
Carbon Monoxide ◽  
Metal Oxides ◽  
Electrochemical Sensors ◽  
Colorimetric Detection ◽  
Infrared Sensors ◽  
Polymeric Thin Films ◽  
Semiconducting Metal Oxides ◽  
Book Covers

The book covers the sensing and monitoring of poisonous carbon monoxide pollution in the environment. The sensors covered include semiconducting metal oxides, carbon nanotubes, conducting polymeric thin films, sensors based on colorimetric detection, non-dispersive infrared sensors, electrochemical sensors and photoacoustic detectors.

Irradiation Induced Changes in Semiconducting Thin Films

2013 ◽  
Vol 341 ◽  
pp. 181-210 ◽  
Author(s):  
S.K. Tripathi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Heavy Ions ◽  
Semiconductor Device ◽  
High Energy ◽  
Device Fabrication ◽  
Electrical Performance ◽  
Radiation Environment ◽  
Extended Defects ◽  
Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

Ablation of transition metal oxides by different laser pulse duration and thin films deposition

2000 ◽  
Vol 154-155 ◽  
pp. 467-472 ◽  
Author(s):  
A Giardini Guidoni ◽  
C Flamini ◽  
F Varsano ◽  
M Ricci ◽  
R Teghil ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Laser Pulse ◽  
Metal Oxides ◽  
Pulse Duration ◽  
Transition Metal Oxides ◽  
Laser Pulse Duration

Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates

1996 ◽  
Vol 443 ◽  
Author(s):  
Neil H. Hendricks
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Process Integration ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Status Report ◽  
Structure Property ◽  
Chemical Structures ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

AbstractFor over two years, intensive efforts at SEMATECH and elsewhere have focused on identifying low dielectric constant (low ε) materials which possess all of the required properties and processing characteristics needed for integration into standard IC fabrication lines. To date, no material candidate has been shown to satisfy this impressive list of requirements. For some candidates, drawbacks related to material properties such as poor thermal stability or electrical performance have been identified; in other cases, problems in process integration, for example difficulties in patterning have stalled progress.In this paper, most of the current leading candidates for the low ε IC IMC application are identified and discussed. An attempt is made to correlate structure/property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application. Key differences in chemistry and property/processing characteristics are contrasted for low c silicon-oxygen polymers and for purely organic polymers. Novel dielectrics such as porous organic and inorganic thin films are also discussed in terms of their properties and associated process integration challenges. Since the needs for global planarization and low c IMD are occurring within roughly the same generation of minimum feature size (˜ 0.25 μm), the chemical mechanical polishing (CMP) of low dielectric constant thin films and/or of SiO2 layers deposited above them is briefly discussed. Both subtractive metalization and damascene processes are included, and the required low dielectric constant film properties and processing characteristics are contrasted for each process. Finally, the author's views on future trends in low dielectric constant materials development are presented, with an emphasis on identifying the types of chemical structures which may prove viable for this most demanding of all polymer film applications.

scholarly journals Binary Metal Oxides Thin Films Prepared from Pulsed Laser Deposition

2021 ◽  
Author(s):  
Cyril Robinson Azariah John Chelliah ◽  
Rajesh Swaminathan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Metal Oxides ◽  
Pulsed Laser ◽  
Primary Objective ◽  
Binary Oxides ◽  
Binary Metal ◽  
Metal Oxide Nanostructures ◽  
Binary Metal Oxide

The semiconductor industry flourished from a simple Si-based metal oxide semiconductor field effect transistor to an era of MOSFET-based smart materials. In recent decades, researchers have been replacing all the materials required for the MOSFET device. They replaced the substrate with durable materials, lightweight materials, translucent materials and so on. They have came up with the possibility of replacing dielectric silicon dioxide material with high-grade dielectric materials. Even then the channel shift in the MOSFET was the new trend in MOSFET science. From the bulk to the atomic level, transistors have been curiously researched across the globe for the use of electronic devices. This research was also inspired by the different semiconductor materials relevant to the replacement of the dielectric channel/gate. Study focuses on diverse materials such as zinc oxides (ZnO), electrochromic oxides such as molybdenum oxides (including MoO3 and MoO2) and other binary oxides using ZnO and MoO3. The primary objective of this research is to study pulsed laser deposited thin films such as ZnO, MoO3, binary oxides such as binary ZnO /MoO3, ZnO /TiO2 and ZnO/V2O5 and to analyse their IV properties for FET applications. To achieve the goal, the following working elements have been set: investigation of pulsed laser deposited thin film of metal oxides and thin film of binary metal oxide nanostructures with effects of laser repetition and deposition temperatures.

scholarly journals In2O3- and SnO2-Based Thin Film Ozone Sensors: Fundamentals

2016 ◽  
Vol 2016 ◽  
pp. 1-31 ◽  
Author(s):  
G. Korotcenkov ◽  
V. Brinzari ◽  
B. K. Cho
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Metal Oxides ◽  
Sensor Response ◽  
Present Review ◽  
Air Humidity ◽  
Kinetics Of

The paper considers SnO2and In2O3thin films as materials for the design of solid-state conductometric ozone sensors in depth. In particular, the present review covers the analysis of the fundamentals of SnO2- and In2O3-based conductometric ozone sensor operation. The main focus is on the description of mechanisms of ozone interaction with metal oxides, the influence of air humidity on sensor response, and processes that control the kinetics of sensor response to ozone.

Synthesis of Transition-Metal-Oxides Meso-Structured Thin Films

1998 ◽  
Vol 549 ◽  
Author(s):  
H.S. Zhou ◽  
I. Honma
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Self Assembly ◽  
Magnetic Interactions ◽  
X Ray Diffraction ◽  
Structured Materials ◽  
Coating Method ◽  
Diffraction Patterns

AbstractHighly ordered self-assembly organized silica meso-structured architectures have attracted increasing attention because these materials provide a rich source for scientific research and technological applications. This approach to meso-structured materials has been extended to non-silica oxides, especially transition-metal-oxides which might promise applications involving electron transfer or magnetic interactions. We report the syntheses of transition-metal-oxides meso-structured thin films (MSTF), such as TiO2, V2O5, Fe2O3 and Nb2O5, using a surfactant templating processing with spin coating method. X-ray diffraction patterns of the films showed that the films generally oriented in a lamellar structure. The phase transferring in V205 MSTF was also investigated.

scholarly journals Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films

2014 ◽  
Vol 105 (2) ◽  
pp. 022108 ◽  
Author(s):  
S. Steffens ◽  
C. Becker ◽  
D. Amkreutz ◽  
A. Klossek ◽  
M. Kittler ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystalline Silicon ◽  
Electrical Performance ◽  
Dangling Bond ◽  
Silicon Thin Films
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