Non-Stoichiometry and Structure of SrCe1-xYbxO3 Perovskite-Type Oxides

1996 ◽  
Vol 453 ◽  
Author(s):  
Igor Kosacki ◽  
Mark Shumsky ◽  
Harlan U. Anderson
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Charge Carrier ◽  
Structural Properties ◽  
Electrical Transport ◽  
Structural Disorder ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Perovskite Type

AbstractThe structural and electrical properties of SrCe1-xYbxO3 ceramics have been studied as a function of temperature and Yb-concentration using x-ray diffraction and impedance techniques. The influence of Yb-dopants on electrical transport and structural disorder has been studied. A correlation between the structural properties, electrical conductivity is observed and discussed. These measurements allow us to determine the mechanism of charge carrier compensation and also the concentration and mobility of the electrical species.

A Study of Substitution the Element of (La+3) on the Structural and Electrical Properties of the Compound Ferrite (𝐂𝐨𝟎.𝟐𝟓𝑵𝒊𝟎.𝟐𝟓𝐙𝐧𝟎.𝟓𝐋𝐚𝐱𝐅𝐞𝟐−𝐱𝐎𝟒)

2021 ◽  
Vol 19 (3) ◽  
pp. 56-61
Author(s):  
Bilal Ahmed Omar ◽  
Rabab Shakour Ali
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Spontaneous Combustion ◽  
Chemical Formula ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Scanning Electron

The ferritic nanocomposite which prepared has the chemical formula of (Co0.25𝑁𝑖0.25Zn0.5LaxFe2−xO4), for different values of (X= 0, 0. 25, 0. 5, 0. 75), by using the spontaneous combustion-gel method, where calcination had been at temperature of (700˚C) for two hours; then studied the structural properties of the resulting ferrite via X-Ray diffraction (XRD), and Scanning Electron Microscopy (SEM) The results denote that the ferrite has a unique phase with a spinal-shaped crystal structure and a granular size are (23-36) nm, with increase in lattice constant of decrease in porosity, and electrical properties were also take in to consideration, like value of dielectric constant, the loss coefficient also observed via increase the frequency. The alternating electrical conductivity (σa.c) increases with increasing frequency.

Fabrication and study the effect of the laser on the properties of the compound Tl2-xHgxBa2-ySryCa2Cu3O10+δ superconductor

2018 ◽  
pp. 168
Author(s):  
A. Kareem Dahash Ali ◽  
Nihad Ali Shafeek
Keyword(s):  
Transition Temperature ◽  
Solid State ◽  
Hydrostatic Pressure ◽  
Electrical Properties ◽  
Co2 Laser ◽  
Temperature Shift ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties

This study included the fabrication of    compound (Tl2-xHgxBa2-ySryCa2Cu3O10+δ) in a manner solid state and under hydrostatic pressure ( 8 ton/cm2) and temperature annealing(850°C), and determine the effect of the laser on the structural and electrical properties elements in the compound, and various concentrations of x where (x= 0.1,0.2,0.3 ). Observed by testing the XRD The best ratio of compensation for x is 0.2 as the value of a = b = 5.3899 (A °), c = 36.21 (A °) show that the installation of four-wheel-based type and that the best temperature shift is TC= 142 K  .When you shine a CO2 laser on the models in order to recognize the effect of the laser on these models showed the study of X-ray diffraction of these samples when preparing models with different concentrations of the values ​​of x, the best ratio of compensation is 0.2 which showed an increase in the values ​​of the dimensions of the unit cell a=b = 5.3929 (A °), c = 36.238 (A°). And the best transition temperature after shedding laser is TC=144 K. 

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Structural and Electrical Properties of Colossal Magnetoresistive LSMO Thin Films Prepared by KrF Laser Ablation Method

2001 ◽  
Vol 666 ◽  
Author(s):  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Jagdish Narayan ◽  
Alexander M. Grishin
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Electrical Properties ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Colossal Magnetoresistive ◽  
Laser Ablation Method ◽  
Structural And Electrical Properties

ABSTRACTWe prepared colossal magnetoresistive La0.8Sr0.2MnO3 thin films on the MgO, SrTiO3 and LaAlO3 single crystal substrates using KrF excimer pulsed laser ablation technique. The structural and electrical properties of the La0.8Sr0.2MnO3 thin films which were strained by the lattice mismatch are reported. The in-plane lattice mismatch between the La0.8Sr0.2MnO3 and MgO, SrTiO3 and LaAlO3 substrates are -7.8 %, -0.5 % and +2.3 %, respectively. The X-ray diffraction spectra of the films exhibited c-axis orientation. In the case of the La0.8Sr0.2MnO3 / LaAlO3 thin films with thickness over 100 nm, the divided (00l) peaks were observed. The surface morphology and transport property of the strongly stressed La0.8Sr0.2MnO3 / LaAlO3 were different from those of La0.8Sr0.2MnO3 / MgO and La0.8Sr0.2MnO3 / SrTiO3thin films.

Structural and electrical properties of Cu-doped Ni–Zn nanocrystalline ferrites for MLCI applications

2017 ◽  
Vol 31 (33) ◽  
pp. 1750318 ◽  
Author(s):  
D. Venkatesh ◽  
K. V. Ramesh
Keyword(s):  
Electrical Properties ◽  
Cation Distribution ◽  
Tetrahedral Site ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Phase Spinel ◽  
Diffraction Patterns

Polycrystalline Cu substituted Ni–Zn ferrites with chemical composition Ni[Formula: see text]Zn[Formula: see text]-Cu[Formula: see text]Fe2O4 (x = 0.00 to 0.25 in steps of 0.05) have been prepared by citrate gel autocombustion method. The samples for electrical properties have been sintered at 900[Formula: see text]C for 4 h. The X-ray diffraction patterns of all samples indicate the formation of single phase spinel cubic structure. The value of lattice parameter is decreases with increasing Cu concentration. The estimated cation distribution can be derived from X-ray diffraction intensity calculations and IR spectra. The tetrahedral and octahedral bond lengths, bond angles, cation–cation and cation–anion distances were calculated by using experimental lattice parameter and oxygen positional parameters. It is observed that Cu ions are distributed in octahedral site and subsequently Ni and Fe ions in tetrahedral site. The grain size of all samples has been calculated by Scanning Electron Microscopy (SEM) images. The variations in DC electrical resistivity and dielectric constant have been explained on the basis of proposed cation distribution.

Effect of La doping on the structural and electrical properties of SrBi2Ta2O9

2004 ◽  
Vol 811 ◽  
Author(s):  
Ortega Nora ◽  
S. Bhattacharyya ◽  
P. Bhattacharya ◽  
R.R. Das ◽  
R.S. Katiyar
Keyword(s):  
Electrical Properties ◽  
Structural Evolution ◽  
Phase Segregation ◽  
X Ray Diffraction ◽  
Lanthanum Doping ◽  
X Ray ◽  
La Doping ◽  
Structural And Electrical Properties ◽  
Vibrational Characteristics ◽  
La Substitution

ABSTRACTThe effect of anthanum substitution (0-20%) on phase formation, structural evolution and electrical properties of SrBi2Ta2O9 (SBT) ceramics were investigated. X-ray diffraction studies revealed that phase pure SBT bulk samples can be synthesized with lanthanum doping without any phase segregation. Raman spectroscopy was used to understand the lattice vibrational characteristics of La substituted SBT compound. The ferroelectric soft mode at 27 cm−1 was shifted towards the lower frequencies at room temperature with increase in La concentrations. The octahedral stretching mode (O-Ta-O) did not influenced by La substitution in SBT. The x-ray photoemission spectroscopy measurements showed the decrease of binding energy of Bi 4f core levels (5/2 and 7/2) upon La substitution in SBT. The dielectric constant was increased from 120 to 190 up to 10% La doping and decreased with further increase in La concentration.

Sol–gel synthesis, structural and electrical properties of Li2CoSiO4 cathode material

2014 ◽  
Vol 07 (06) ◽  
pp. 1440001 ◽  
Author(s):  
Michał Świętosławski ◽  
Marcin Molenda ◽  
Piotr Natkański ◽  
Piotr Kuśtrowski ◽  
Roman Dziembaj ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Sol Gel ◽  
Lithium Ion ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Structural And Electrical Properties ◽  
Potential Alternative ◽  
Sol Gel Synthesis ◽  
First Time

Polyanionic cathode materials for lithium-ion batteries start to be considered as potential alternative for layered oxide materials. Among them, Li 2 CoSiO 4, characterized by outstanding capacity and working voltage, seems to be an interesting substitute for LiFePO 4 and related systems. In this work, structural and electrical investigations of Li 2 CoSiO 4 obtained by sol–gel synthesis were presented. Thermal decomposition of gel precursor was studied using EGA (FTIR)-TGA method. Chemical composition of the obtained material was confirmed using X-ray diffraction and energy-dispersive X-ray spectroscopy. The morphology of β- Li 2 CoSiO 4 was studied using transmission electron microscopy. High temperature electrical conductivity of Li 2 CoSiO 4 was measured for the first time. Activation energies of the electrical conductivity of two Li 2 CoSiO 4 polymorphs (β and γ) were determined. The room temperature electrical conductivity of those materials was estimated as well.

Effects of Donor Doping on Microstructure and Electrical Properties of Bismuth Layer-Structured Bi4Ti3O12 Ceramics

2007 ◽  
Vol 280-283 ◽  
pp. 259-262 ◽  
Author(s):  
Lina Zhang ◽  
Su Chuan Zhao ◽  
Liao Ying Zheng ◽  
Guo Rong Li ◽  
Qing Rui Yin
Keyword(s):  
Electrical Conductivity ◽  
High Temperature ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Orthorhombic Phase ◽  
X Ray Diffraction ◽  
Suitable Candidate ◽  
X Ray ◽  
Donor Doping ◽  
Diffraction Patterns

A study was conducted on the effects of donor dopants, Nb2O5 and WO3, on microstructure and electric properties of Bi4Ti3O12 (BIT) ceramics. X-ray diffraction patterns of the materials showed a single orthorhombic phase structure. The microstructure results revealed the appearance of plate-like grain. The donor doping decreased the conductivity of BIT by as much as 3 orders of magnitude. The dielectric and ferroelectric properties of doped-BIT materials were also investigated. The decrease in the electrical conductivity allowed the doped samples to be poled to develop piezoelectricity. Thermal annealing studies of the samples indicated the donor-doped BIT were suitable candidate materials for high-temperature piezoelectric applications.

GaZnO as a Transparent Electrode to Silicon Carbide

2012 ◽  
Vol 717-720 ◽  
pp. 849-852
Author(s):  
Jung Ho Lee ◽  
Ji Hong Kim ◽  
Kang Min Do ◽  
Byung Moo Moon ◽  
Sung Jae Joo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Hall Effect Measurement ◽  
Transparent Electrode ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Structural And Electrical Properties ◽  
Substrate Temperature Increase ◽  
Substrate Temperatures

The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS~250 to 550oC) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 oC, whereas the lowest resistivity (~3.3 x 10-4 Ωcm) and highest carrier concentration (~1.33x1021cm-3) values are observed for the GaZnO films deposited at 400 oC. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ Introduction ions may affect the electrical properties of GaZnO films on SiC.

W–Ti–O layers for gas-sensing applications: Structure, morphology, and electrical properties

1998 ◽  
Vol 13 (6) ◽  
pp. 1568-1575 ◽  
Author(s):  
L. Sangaletti ◽  
E. Bontempi ◽  
L. E. Depero ◽  
R. Salari ◽  
M. Zocchi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gas Sensing ◽  
Phase Segregation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sensing Applications ◽  
Structure Morphology ◽  
Structural And Electrical Properties ◽  
Kinetics Of ◽  
Structurally Stable

The kinetics of phase transitions and phase segregation induced by annealing temperature on the Ti–W–O gas-sensing layer was studied by x-ray diffraction, Raman spectroscopy, and scanning electron microscopy. The main goal was to identify, on the basis of kinetics studies, structurally stable Ti–WO3 thin film phases and compare their response to polluting gases in order to determine possible correlations between structural and electrical properties of the sensing layers.

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