Concentration Measurements of Chlorine Atoms in A Plasma Reactor

1986 ◽  
Vol 68 ◽  
Author(s):  
Joda Wormhoudt ◽  
Alan C. Stanton ◽  
Albert D. Richards ◽  
Herbert H. Sawin

AbstractInfrared absorption spectroscopy has been used to measure atomic chlorine concentrations over a range of plasma conditions in both Cl2 and CF3Cl discharges.These measurements were made utilizing the spin-orbit transitions in the ground state of atomic chlorine near 882 cm−1.The concentration studies were performed by passing light from a diode laser through a multi-pass (White) cell set in two opposed windows of a parallel plate plasma etching reactor.The plasma work was preceded by a laboratory measurement of the infrared absorption line strengths of the 2P1/2 ← 2P3/2 transition.This measurement was done in a known concentration of atomic chlorine produced in a low pressure discharge flow system by the reaction of Cl2 or HCl with excess fluorine atoms.These measurements resulted in an integrated line strength of 4.14 (±0.89) × 10−21 cm2-molecule−1-cm−1 for the strongest hyperfine component of the transition at 882.3626 cm−1.Measured atomic chlorine concentrations in Cl2 discharges varied between 0.2 and 8.0 × 1014 atoms/cm3, representing atomic chlorine fractions on the order of a few percent.The measured atomic chlorine concentrations increased approximately linearly with increasing power and pressure, and increased with increasing frequency above approximately 1 MHz.Below 1 MHz, the atomic chlorine concentration was relatively independent of frequency.

1988 ◽  
Vol 117 ◽  
Author(s):  
Jean-Philippe Nicolai ◽  
Kenneth D. Allen ◽  
Herbert H. Sawin

AbstractSpatially resolved concentration profiles of ground-state chlorine atoms were measured in CF3 Cl/Ar RF plasmas using two-photon laser induced fluorescence. A significant Cl gradient was found between the two electrodes under conditions typical for plasma etching. This experimental observation is consistent with previous model predictions which assumed the primary loss of Cl was a second-order surface recombination on the upper electrode which is partially limited by gaseous diffusion.


1991 ◽  
Vol 223 ◽  
Author(s):  
E. Ikawa ◽  
K. Tokashiki ◽  
T. Kikkawa ◽  
Y. Teraoka ◽  
I. Nishiyama

ABSTRACTThe influence of HBr discharge ambience on SiO2 etching is investigated. A batch type parallel-plate reactive ion etching (RIE) dry etcher was used. The discharge ambience was changed by changing the numbers of poly-Si and SiO2 wafers in the same chamber. It is found that as the number of poly-Si wafers increased, the poly-Si etch rate slightly decreased due to a loading effect and SiO2 etching rate drastically increased. The selectivity of poly-Si / SiO2 decreased with increasing the ratio of the loaded poly-Si number in the same chamber. When A12O3 wafers instead of poly-Si wafers were loaded with SiO2 substrates, SiO2 etching rate enhancement did not occur. Therefore, increase of SiO2 etch rate could not be explained using a loading effect. From the results of mass analysis during etching in Si contained HBr plasma, etching products SiBrx (x=1,2,3) peaks were observed. Namely, when the Si etching products were supplied to SiO2 surface, SiO2 etch rate increased. In order to suppress the enhancement of SiO2 etch rate, the etch temperature must be reduced.


1988 ◽  
Vol 135 (11) ◽  
pp. 2786-2794 ◽  
Author(s):  
Demetre J. Economou ◽  
Richard C. Alkire

1976 ◽  
Vol 54 (14) ◽  
pp. 1438-1441 ◽  
Author(s):  
M. Dagenais ◽  
J. W. C. Johns ◽  
A. R. W. McKellar

The 2P1/2–2P3/2 transition within the 2P ground state of atomic chlorine has been studied by the technique of laser Zeeman spectroscopy using a 13C16O2 laser line at 882.288 cm−1. The 2P1/2–2P3/2 splitting is measured to be 882.3519 ± 0.0012 cm−1 (weighted mean for the 35Cl and 37Cl isotopes), and this splitting is determined to be 28.2 ± 2 MHz larger for 37Cl than for 35Cl.


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