The Influence of HBr Discharge Ambience on Poly-Si/SiO2 Etching Selectivity

1991 ◽  
Vol 223 ◽  
Author(s):  
E. Ikawa ◽  
K. Tokashiki ◽  
T. Kikkawa ◽  
Y. Teraoka ◽  
I. Nishiyama
Keyword(s):  
Plasma Etching ◽  
Parallel Plate ◽  
Etch Rate ◽  
Etching Rate ◽  
Mass Analysis ◽  
Ion Etching ◽  
Loading Effect ◽  
Batch Type ◽  
Etching Selectivity ◽  
Hbr Plasma

ABSTRACTThe influence of HBr discharge ambience on SiO2 etching is investigated. A batch type parallel-plate reactive ion etching (RIE) dry etcher was used. The discharge ambience was changed by changing the numbers of poly-Si and SiO2 wafers in the same chamber. It is found that as the number of poly-Si wafers increased, the poly-Si etch rate slightly decreased due to a loading effect and SiO2 etching rate drastically increased. The selectivity of poly-Si / SiO2 decreased with increasing the ratio of the loaded poly-Si number in the same chamber. When A12O3 wafers instead of poly-Si wafers were loaded with SiO2 substrates, SiO2 etching rate enhancement did not occur. Therefore, increase of SiO2 etch rate could not be explained using a loading effect. From the results of mass analysis during etching in Si contained HBr plasma, etching products SiBrx (x=1,2,3) peaks were observed. Namely, when the Si etching products were supplied to SiO2 surface, SiO2 etch rate increased. In order to suppress the enhancement of SiO2 etch rate, the etch temperature must be reduced.

The effect of BCl3 pretreatment on the etching of AlN in Cl2-based plasma

2008 ◽  
Vol 1108 ◽  
Author(s):  
Xiaoyan Xu ◽  
Vladimir Kuryatkov ◽  
Boris Borisov ◽  
Mahesh Pandikunta ◽  
Sergey A Nikishin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Native Oxide ◽  
Short Exposure ◽  
Ion Etching ◽  
Inductively Coupled ◽  
High Etch Rate

AbstractThe effect of BCl3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AlN is investigated using inductively coupled plasma reactive ion etching. The native AlN oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both AlN and its native oxide. Following removal of the native oxide, Cl2/Ar/BCl3 plasma etching with 15% BCl3 fraction results in a high etch rate ˜ 87 nm/min and modest increases in the surface roughness.

An Etch-Back Planarization Process Using A Sacrificial Polymide Layer

1991 ◽  
Vol 240 ◽  
Author(s):  
J. R. Lothian ◽  
T. R. Fullowan
Keyword(s):  
Surface Topography ◽  
Dielectric Layer ◽  
Rate Ratio ◽  
Parallel Plate ◽  
Etch Rate ◽  
Dielectric Film ◽  
Sacrificial Layer ◽  
Loading Effect ◽  
Planarization Process ◽  
Etching System

ABSTRACTAn etch-back polymide planarization process for the emitter contact of AlGaAs/GaAs HBTs using PC-1500 is presented. The degree of surface topography has a major impact on the yield in HBT fabrication. A planarization process using a spin-on sacrificial layer to produce a planar interlevel dielectric layer would be very beneficial in allowing thicker and more uniform emitter contacts therefore enhancing the yield and current handling capability. The PC-1500 polymer flows at 200°C and provides a much better planarity than regular photoresist. For patterns from -3 μm to 250 this polymer can achieve 80% to 92% planarity. The wafers were etched in a parallel plate, single wafer reactive ion-etching system with a mixture of oxygen and Freon-14. The etch rate of this polymer increased with the oxygen content of the discharge then became fairly constant at high O2 concentrations while the etch rate of the underlying dielectric film (SiN) was proportional to the Freon 14 content. This new polymer shows little loading effect. A 1:1 etch rate ratio of SiN to PC-1500 was established for good planarity.

Mass Spectrometric Studies of Ions Produced in Halofluorocarbon Plasma Etching of Silicon and Silicon Dioxide

1988 ◽  
Vol 117 ◽  
Author(s):  
E. Occhiello ◽  
F. Garbassi ◽  
J. W. Coburn
Keyword(s):  
Silicon Dioxide ◽  
Plasma Etching ◽  
Reactive Ion Etching ◽  
Mass Spectrometric ◽  
Silicon Tetrafluoride ◽  
Mass Analysis ◽  
Molecular Chlorine ◽  
Carbon Oxides ◽  
Ion Etching ◽  
Discharge Chemistry

AbstractThe distribution of ions present in halofluorocarbon (CF4, CF3Cl, CF3Br, CF2Cl2 ) plasmas has been studied by mass analysis of the ions extracted from the discharge. Silicon and silicon dioxide targets have been used to study the discharge chemistry in Reactive Ion Etching (RIE) conditions. In the case of silicon, both fluorine and chlorine participate in the etching; therefore, the discharge is enriched in halocarbon oligomers and etch products containing fluorine, chlorine and bromine. The higher reactivity of fluorine induces the formation of chlorine or bromine-enriched molecules and ions. Chlorine and bromine molecules are formed but their concentration in the discharge is not high due to consumption by etching. The situation is different with the silicon dioxide target. In this case, etching consumes both fluorine and fluorocarbon radicals, leading to the formation of silicon tetrafluoride and carbon oxides. The target, in this case, is “neutral”; the discharge is not enriched in oligomers as for silicon. The tendency to form chlorine and bromine-enriched species is still present and considerable amounts of molecular chlorine and bromine are present in the discharge because they do not participate efficiently in etching.

In Situ Design of Experiments for A Reactive Ion Etching Process

1999 ◽  
Vol 569 ◽  
Author(s):  
Cecilia G. Galarza ◽  
Pete Klimecky ◽  
Pramod P. Khargonekar ◽  
Fred L. Terry
Keyword(s):  
Design Of Experiments ◽  
Plasma Etching ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Etching Process ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Ion Etching ◽  
Spatial Uniformity

ABSTRACTWe introduce a new procedure to perform a design of experiments (DOE) for plasma etching processes. In particular, we use in situ etch rate estimations to maximize the number of observable setpoints during a single run of the etching process. This procedure is applied to characterize the spatial uniformity of a plasma chamber used in the manufacturing of flat panel displays.

Isotropic Etching of SiC

2008 ◽  
Vol 600-603 ◽  
pp. 651-654 ◽  
Author(s):  
Thomas Stauden ◽  
Florentina Niebelschütz ◽  
Katja Tonisch ◽  
Volker Cimalla ◽  
Gernot Ecke ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Substrate Temperature ◽  
Plasma Etching ◽  
Parallel Plate ◽  
Etching Rate ◽  
Chamber Pressure ◽  
Rf Power ◽  
Isotropic Etching ◽  
Parallel Plate Reactor ◽  
Substrate Temperatures

Isotropic etching of silicon carbide was achieved using a capacitive coupled parallel plate reactor in plasma etching mode and SF6 at elevated substrate temperatures. It was observed to be remarkable at substrate temperatures above 350°C. The influence of chamber pressure, masking materials, rf-power and substrate temperature were analyzed. Thereby, 8.5° off-axis oriented 4HSiC wafers exhibit a larger vertical and lateral etching rate compared to on-axis oriented SiC wafers. Additionally, the erosion of nitrogen containing masking material results in a reduction of the etching rates.

scholarly journals Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon
Keyword(s):  
Gas Phase ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Research Work ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Ar Plasma ◽  
Ar Gas ◽  
Etching Selectivity

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

Reactive Ion Etching of GaSb, (Ai,Ga)Sb, and InAs for Novel Device Applications.

1990 ◽  
Vol 216 ◽  
Author(s):  
D.C. La Tulipe ◽  
D.J. Frank ◽  
H. Munekata
Keyword(s):  
Etch Rate ◽  
Reactive Ion Etching ◽  
Scanning Electron Micrographs ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Novel Device ◽  
Physical Sputtering ◽  
Chlorine Gas ◽  
Device Applications ◽  
Scanning Electron

ABSTRACT-Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. We have studied the reactive ion etching characteristics of GaSb, (AI,Ga)Sb, and InAs in both methane/ hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH4/H2, the etch rate of (AI,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200Å/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl2 was found to yield anisotropic profiles, with the etch rate of (AI,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to an InAs “stop layer” was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs-channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics.

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