Quartz Crystal Microbalance Studies of the Plasma-Assisted Etching of Polyimide and Tungsten Thin Films

1986 ◽  
Vol 68 ◽  
Author(s):  
F. Fracassi ◽  
J. W. Coburn

AbstractThe etching of polyimide thin films and tungsten thin films has been studied as a function of bias voltage using two quartz crystal microbalances (QCM) installed in a low pressure 13.56 MHz rf plasma system.One of the QCM's is biased (rf bias was used for the polyimide films; de bias was used for the tungsten films) and the other QCM is unbiased.In this way, the influence of energetic positive ion bombardment on etching can be studied.The etching of polyimide is studied in CF4-O2 glow discharges whereas CF4-H2 gas mixtures were used in the etching of tungsten.In the tungsten etching studies, the surfaces were vacuum-transferred to an Auger electron spectrometer for surface analysis.

1999 ◽  
Vol 354 (1-2) ◽  
pp. 245-250 ◽  
Author(s):  
Roberto Paolesse ◽  
Corrado Di Natale ◽  
Viviana Campo Dall’Orto ◽  
Antonella Macagnano ◽  
Alessio Angelaccio ◽  
...  

2012 ◽  
Vol 1426 ◽  
pp. 307-311 ◽  
Author(s):  
Yeonwon Kim ◽  
Kosuke Hatozaki ◽  
Yuji Hashimoto ◽  
Hyunwoong Seo ◽  
Giichiro Uchida ◽  
...  

ABSTRACTWe have carried out in-situ measurements of cluster volume fraction in silicon films during deposition by using quartz crystal microbalances (QCM’s) together with a cluster-eliminating filter. The cluster volume fraction in films is deduced from in-situ measurements of film deposition rates with and without silicon clusters using QCM’s. The results show that the higher deposition rate leads to the higher volume fraction of clusters.


2012 ◽  
Vol 40 (2-3) ◽  
pp. 216-225 ◽  
Author(s):  
Leping Chen ◽  
Jian Zhang ◽  
X. H. Zhai ◽  
J. Q. Han ◽  
J. Y. Lu

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.


2020 ◽  
Vol 3 (6) ◽  
pp. 5687-5697 ◽  
Author(s):  
Roto Roto ◽  
Aditya Rianjanu ◽  
Annisa Rahmawati ◽  
Innas Amaliya Fatyadi ◽  
Nursidik Yulianto ◽  
...  

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