Design of Metal-Semiconductor-Metal Ultra-Violet Detector on Gallium Nitride
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ABSTRACTThe design of Gallium Nitride based Metal-Semiconductor-Metal Ultra-Violet detector is discussed. We introduce a simulation model using Medici to describe the performances of such detectors. Structure parameters, such as the inter-digitated electrode dimension and the GaN layer thickness, are optimized for response current and time using this model. The simulation results can be explained by the variation of depletion region. We introduce the “effective electric field intensity” to describe the depletion region. The relationship between the “effective electric field intensity” and structure parameters are simulated and discussed.
2016 ◽
Vol 472
(2188)
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pp. 20150750
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1979 ◽
Vol 44
(3)
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pp. 841-853
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2021 ◽
Vol 1815
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pp. 012037
2014 ◽
Vol 2014
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pp. 1-6
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2003 ◽
Vol 42
(Part 1, No. 7B)
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pp. 4642-4645
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