Excimer Laser Annealing Effect on MILC Polycrystalline Silicon Film

2001 ◽  
Vol 685 ◽  
Author(s):  
Kee-Chan Park ◽  
In-Hyuk Song ◽  
Sang-Hoon Jung ◽  
Min-Koo Han
Keyword(s):  
Melting Temperature ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Silicon Film ◽  
Excimer Laser Annealing ◽  
Ni Content ◽  
Transmission Electron ◽  
Irradiation Energy

AbstractXeCl excimer laser was irradiated on metal induced laterally crystallized (MILC) polycrystalline silicon (poly-Si) film in order to eliminate the intra-grain defects of MILC poly-Si film which incorporated 2 μm wide metal induced crystallized (MIC) poly-Si line pattern. On the irradiation of the laser beams, different melt and recrystallization phenomena were observed in the MILC and the MIC poly-Si region due to the Ni content difference in each film. The transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) measurements indicated that the melting temperature of the poly-Si film decreased as the Ni content increased. With the laser irradiation energy density of 370 mJ/cm2, 2 μm long defect-free poly-Si grain was successfully grown in the MILC poly-Si due to the melting temperature variation at the MILC-MIC poly-Si boundary.

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

2006 ◽  
Vol 45 (4A) ◽  
pp. 2726-2730 ◽  
Author(s):  
Naoya Kawamoto ◽  
Atsushi Masuda ◽  
Naoto Matsuo ◽  
Yasuhiro Seri ◽  
Toshimasa Nishimori ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing

The Recrystallization Depth Control of the Excimer-Laser-Recrystallized Poly-Crystalline Silicon Film

1999 ◽  
Vol 557 ◽  
Author(s):  
Kee-Chan Park ◽  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Film Structure ◽  
Excimer Laser Annealing ◽  
Silicon Oxide Layer ◽  
Thin Oxide Film

AbstractA novel method to control the recrystallization depth of amorphous silicon (a-Si) film during the excimer laser annealing (ELA) is proposed in order to preserve a-Si that is useful for fabrication of poly-Si TFT with a-Si offset in the channel. A XeCl excimer laser beam is irradiated on a triple film structure of a-Si thin native silicon oxide (~20Å)/thick a-Si layer. Only the upper a-Si film is recrystallized by the laser beam irradiation, whereas the lower thick a-Si film remains amorphous because the thin native silicon oxide layer stops the grain growth of the poly-crystalline silicon (poly-Si). So that the thin oxide film sharply divides the upper poly-Si from the lower a-Si.

Ultra-Low Temperature Poly-Si Thin Film by Excimer Laser Recrystallization For Flexible Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
Sang-Myeon Han ◽  
Min-Cheol Lee ◽  
Su-Hyuk Kang ◽  
Moon-Young Shin ◽  
Min-Koo Han
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Inductively Coupled Plasma ◽  
Laser Annealing ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Plastic Substrate ◽  
Excimer Laser Annealing ◽  
Plasma Chemical Vapor Deposition ◽  
Laser Recrystallization

AbstractAn ultra-low temperature (< 200°C) polycrystalline silicon (poly-Si) film is fabricated for the plastic substrate application using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing. The precursor active layer is deposited using the SiH4/He mixture at 150°C (substrate). The deposited silicon film consists of crystalline component as well as hydrogenated amorphous component. The hydrogen content in the precursor layer is less than 5 at%. The grain size of the precursor active silicon film is about 200nm and it is increased up to 500nm after excimer laser irradiation.

A Novel Excimer Laser Crystallization Method of Poly-Si Thin Film by Grid Line Electron Beam Irradiation

1999 ◽  
Vol 557 ◽  
Author(s):  
C-M Park ◽  
M-C Lee ◽  
J-H Jeon ◽  
M-K Han
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Ion Beam ◽  
Growth Effect ◽  
Beam Irradiation ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Transmission Electron ◽  
Si Thin Film

AbstractExcimer laser annealing technique is proposed to increase the grain size and controlling the microstructure of polycrystalline silicon (poly-Si) thin film. Our method is based on the lateral grain growth during laser annealing. Our specific grid ion beam irradiation method was designed to maximize the lateral growth effect and arrange the location of grain boundaries. We observed well-arranged poly-Si grains up to micrometer order by transmission electron microscopy (TEM).

Effects of Excimer Laser Annealing Process on the Ni-Sputtered Amorphous Silicon Film

2010 ◽  
Vol 13 (10) ◽  
pp. H346 ◽  
Author(s):  
Moojin Kim ◽  
GuangHai Jin ◽  
Hoonkee Min ◽  
HoKyoon Chung ◽  
Sangsoo Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Film ◽  
Annealing Process ◽  
Excimer Laser Annealing ◽  
Amorphous Silicon Film

Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing

2002 ◽  
Vol 46 (8) ◽  
pp. 1085-1090 ◽  
Author(s):  
Chang-Ho Tseng ◽  
Ching-Wei Lin ◽  
Teh-Hung Teng ◽  
Ting-Kuo Chang ◽  
Huang-Chung Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
Silicon Thin Films ◽  
Krf Excimer Laser
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