Effects of Cation Substitution on the Thermoelectric Properties in Ca-Co-O

2001 ◽  
Vol 691 ◽  
Author(s):  
Ichiro Matsubara ◽  
Ryoji Funahashi ◽  
Masahiro Shikano ◽  
Kei Sasaki ◽  
Hiroyuki Enomoto

ABSTRACTWe have prepared (Ca1−x−yMxBiy)3Co4Oz (M = Mg, Sr, and Ba) thin films by a combinatorial approach using a solution process. In the systems of (Ca1−x−yMxBiy)3Co4Oz (M = Mg, Sr, and Ba), solid solution range was determined to be × < 0.8 (M = Sr, y = 0), x < 1.0 (M = Mg, y = 0), x = 0.0 (M = Ba, y = 0), and x < 0.4 (M = Bi, x = 0). No solid solution range was obtained for the substitution of Ba for Ca site. The in-plane compressive stress in the CoO2 sublattice is controllable by the cation substitution for Ca in the (Ca2CoO3) sublattice. With increasing in-plane stress, the magnitude of thermoelectric power and resistivity increased.

2020 ◽  
Vol 8 (38) ◽  
pp. 19975-19983
Author(s):  
Arindom Chatterjee ◽  
Emigdio Chavez-Angel ◽  
Belén Ballesteros ◽  
José Manuel Caicedo ◽  
Jessica Padilla-Pantoja ◽  
...  

Oxygen stoichiometry in epitaxial GdBaCo2O5.5±δ films accommodates the strain, which substantially affects thermoelectric properties, bringing the material from p-type (tensile strain c⊥-oriented on STO) to n-type thermopower (compressive b⊥ on LAO).


2014 ◽  
Vol 2 (18) ◽  
pp. 6532-6539 ◽  
Author(s):  
Hongkwan Park ◽  
Seung Hwan Lee ◽  
Felix Sunjoo Kim ◽  
Hyang Hee Choi ◽  
In Woo Cheong ◽  
...  

Our results indicate that a well-designed simple post-processing process can boost the efficiency of thermoelectric power generators made of conjugated polymer thin films.


1989 ◽  
Vol 169 ◽  
Author(s):  
S. J. Golden ◽  
T. E. Bloomer ◽  
F. F. Lange ◽  
A. M. Segadaes ◽  
K. J. Vaidya ◽  
...  

AbstractThin films in the Bi‐Sr‐Ca‐Cu‐O system have been synthesized from liquid ethyl hexanoate precursors by spin pyrolysis. An extensive solid solution range was determined for the two Cu‐layer phase through the study of c‐axis oriented, single‐phase thin films fabricated on single‐crystal MgO (100). Extensive cation non‐stoichiometry was observed in all cases. The variation of important thin film properties with composition within the solid solution range have been described.Utilising the results from the thin film study together with data relating to liquid formation in mixtures of bulk material a working model describing the formation of the two‐layer phase has been formulated. The two‐layer phase is formed as the result of precipitation from a fugitive liquid at temperatures exceeding 730 *C.


CrystEngComm ◽  
2016 ◽  
Vol 18 (5) ◽  
pp. 807-815 ◽  
Author(s):  
Sung Woon Cho ◽  
Myoungho Jeong ◽  
Jun Hyeon Kim ◽  
Yong Hun Kwon ◽  
Hyoungsub Kim ◽  
...  

The strong single-phase InGaO3(ZnO)m films with superlattice structures showed superior thermoelectric power factors. Their microstructural growth evolution was investigated using transmission electron microscopy in detail.


2000 ◽  
Vol 15 (3) ◽  
pp. 772-782 ◽  
Author(s):  
W. Pitschke ◽  
R. Kurt ◽  
A. Heinrich ◽  
J. Schumann ◽  
H. Grießmann ◽  
...  

The structure-formation process and thermoelectric properties of binary and Fe-doped IrxSi1−x (0.30 ≤ x ≤ 0.41) thin films were investigated. The films were prepared by means of physical vapor deposition techniques, in particular by magnetron co-sputtering and electron beam co-evaporation. The amount of Fe dopant varied between 0 and 5 at.%. The phase-formation process depends on the volume fractions of the major components Ir and Si, whereas the small concentrations of dopant did not change the sequence of the crystalline phases formed. On the other hand, the thermoelectric transport properties correlate strongly with both the structure-formation process and the chemical composition of the films. Fe-doped iridium silicide films with useful thermoelectric power factors were successfully obtained by both magnetron co-sputtering and electron beam co-evaporation. A maximum thermoelectric power factor of 8.5 μW/(K2 cm) at 1200 K was observed for evaporated layers with thechemical composition Ir0.35Si0.63Fe0.02.


2015 ◽  
Vol 3 (6) ◽  
pp. 2677-2683 ◽  
Author(s):  
Yuanhui Sun ◽  
Fengjiao Zhang ◽  
Yimeng Sun ◽  
Chong-an Di ◽  
Wei Xu ◽  
...  

The present work demonstrates the thermoelectric properties of CuTCNQ, including nanocrystals and thin films containing nanorod arrays. CuTCNQ displayed n-type thermoelectric behaviors with a relatively high thermoelectric power up to −632.1 μV K−1 at 370 K.


1993 ◽  
Vol 335 ◽  
Author(s):  
S. R. Gilbert ◽  
B. W. Wessels ◽  
D. A. Neumayer ◽  
T. J. Marks ◽  
J. L. Schindler ◽  
...  

AbstractBa1−xSrxTiO3 thin films were deposited over the entire solid solution range by low pressure metal-organic chemical vapor deposition. The metal-organic precursors employed were titanium tetraisopropoxide and barium and strontium(hexafl uoroacetylacetonate)2·tetraglyme. The substrates used were LaAlO3 and (100) p-type Si. Ba1−xSrxTiO3 films deposited on LaAlO3 were epitaxial, while the films deposited on Si showed no texture. Auger spectroscopy indicated that single phase Ba1−xSrxTiO3 films did not contain detectable levels of fluorine contamination. The dielectric constant was found to depend upon the solid solution composition x, and values as large as 220 measured at a frequency of 1 MHz were obtained. The resistivities of the as-deposited films ranged from 103 to 108 Ω-cm. Temperature dependent resistivity measurements indicated the films were slightly oxygen deficient.


Sign in / Sign up

Export Citation Format

Share Document