Structural Dependence and Dynamics of White Luminescence in Multilayer Structures for White Organic Light Emitting Devices

2001 ◽  
Vol 708 ◽  
Author(s):  
Shizuo Fujita ◽  
Ken-ichi Uesaka ◽  
Shigeo Fujita

ABSTRACTWhite electroluminescence (EL) spectra are carefully investigated in terms of the multilayer structures and a rule for designing the white luminescence is discussed. For a simple structure which consists of tris(8-hydroxyquinoline)-aluminum (Alq) and 1,2,3,4,5-pentaphenyl-1,3-cyclopendadiene (PPCP) emitting green and blue luminescence, respectively, as luminescent and electron transport layers, white luminescence appeared if the thickness of each layer was appropriately chosen. The luminescence efficiency was higher in PPCP, and therefore one of the structures effectively emitting white luminescence was designed as PPCP(10 nm)/Alq(40 nm). The 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) was then added to the PPCP/Alq structure intending to enhance red luminescence. We propose the structure where red luminescence is from the DCM as photoluminescence excited by the green and blue luminescence from Alq and PPCP, which was effective, compared to the PPCP/Alq/DCM stacking structure, in avoiding increase of the operating voltage. The importance of designing structures of organic white EL devices based on fundamental optical properties of the constituent layers and on luminescence dynamics is highlighted.

Small Science ◽  
2021 ◽  
pp. 2000048
Author(s):  
Xiao-Yan Qian ◽  
Ying-Yi Tang ◽  
Wei Zhou ◽  
Yang Shen ◽  
Ming-Lei Guo ◽  
...  

2019 ◽  
Vol 2019 ◽  
pp. 1-8
Author(s):  
Tingting Zhang ◽  
Xugu Zhang ◽  
Peizhi Yang ◽  
Jinke Bai ◽  
Chun Chang ◽  
...  

Stable luminance properties are essential for light-emitting devices with excellent performance. Thermal photoluminescence (PL) quenching of quantum dots (QDs) under a high temperature resulting from a surface hole or electron traps will lead to unstable and dim brightness. After treating CdZnSe/ZnSe QDs with TBP, which is a well-known passivation reagent of the anions, the excess Se sites on the surface of the QDs were removed and their PL quantum yields (QYs) was improved remarkable. Furthermore, after TBP treatment, the CdZnSe/ZnSe QDs exhibit no quenching phenomena even at a high temperature of 310°C. The electroluminescent light-mitting diodes based on the QDs with TBP treatment also demonstrated satisfied performance with a maximum current density of 1679.6 mA/cm2, a peak luminance of 89500 cd/m2, and the maximum values of EQE and luminescence efficiency are 15% and 14.9 cd/A, respectively. The performance of the fabricated devices can be further improved providing much more in-depth studies on the CdZnSe/ZnSe QDs.


1999 ◽  
Vol 558 ◽  
Author(s):  
J. Campbell Scott ◽  
George G. Malliaras ◽  
Luisa Bozano ◽  
Sue A. Carter ◽  
Sergio Ramos

ABSTRACTQualitatively, the basic principles behind the operation of OLEDs are well established. In order to optimize device parameters such as power efficiency and operating voltage, to explore the limits of performance and to understand changes in the electrical properties as diodes age, it is necessary to develop a quantitative understanding of each of the relevant processes: injection of electrons and holes at the cathode and anode, charge transport, recombination and exciton formation, and emission. In this paper, we summarize our experimental, theoretical and numerical studies to address these issues.


2015 ◽  
Vol 15 (10) ◽  
pp. 8070-8074
Author(s):  
Dae Hun Kim ◽  
Tae Whan Kim

The electrical and optical properties of tandem organic light-emitting devices (OLEDs) fabricated utilizing an organic bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) and 1,4,5,8,9,11- hexaazatriphenylenehexacarbonitrile (HAT-CN) charge generation layer (CGL) were investigated to enhance their efficiency. While the operating voltage of the tandem OLEDs with a BEDT-TTF and HAT-CN CGL at 50 mA/cm2 was 11.2 V lower than that of the tandem OLEDs without a CGL, the current efficiency of the tandem OLEDs with a BEDT-TTF and a HAT-CN CGL at 50 mA/cm2 was 0.8 cd/A higher than that of the tandem OLEDs without a CGL. An increase in the current efficiency and a decrease in the operating voltage of the tandem OLEDs with a BEDT-TTF and an HAT-CN CGL were attributed to the enhancement of the electron injection due to its existence in the highest occupied molecular orbital level of the BEDT-TTF between the HAT-CN and the tris-(8- hydroxyquinoline)aluminum layer.


1995 ◽  
Vol 392 ◽  
Author(s):  
T Taskin ◽  
Q Huda ◽  
A Scholes ◽  
J H Evans ◽  
A R Peaker ◽  
...  

AbstractThis paper reports a study of the non-radiative processes competing with the excitation of the erbium ion in layers implanted with high concentrations of erbium and oxygen. These processes reduce the luminescence efficiency of the Si:Er system and dramatically increase the threshold current density calculated to be necessary for an ultimate goal, the Si/Ge:Er LASER. Using cross sectional TEM, photoluminescence as a function of temperature and DLTS, it is demonstrated that a two stage anneal procedure which avoids the formation of extended defects and removes specific deep states is necessary to obtain efficient Er3+ excitation at high erbium concentrations. Comparisons are made with damage resulting from germanium implantation into silicon. The role of multiple stage anneals is discussed in relation to the removal of Shockley-Hall-Read recombination centres


2001 ◽  
Vol 121 (1-3) ◽  
pp. 1739-1740 ◽  
Author(s):  
T. Fujisawa ◽  
T Sonoda ◽  
R. Ootake ◽  
A. Fujii ◽  
K. Yoshino

2013 ◽  
Vol 23 (44) ◽  
pp. 5550-5555 ◽  
Author(s):  
Hisahiro Sasabe ◽  
Hiromi Nakanishi ◽  
Yuichiro Watanabe ◽  
Shogo Yano ◽  
Masakatsu Hirasawa ◽  
...  

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