The Formation of Highly Conductive Shallow Junction Layers in (100) Siliconl By Gallium Ion Implantation

1986 ◽  
Vol 71 ◽  
Author(s):  
H.B. Harrison ◽  
Y.H. Li ◽  
G.A. Sai-Halasz ◽  
S. Iyer
Keyword(s):  
Ion Implantation ◽  
Comparative Study ◽  
Electrical Activation ◽  
Shallow Junction ◽  
Type Silicon ◽  
Thermally Processed ◽  
Long Time ◽  
P Type ◽  
Ion Implanted

AbstractThis paper presents the results obtained from a comparative study of ion implanted Gallium (Ga) into (100), n type Silicon. A comparison is made between long time (≥ 30 mins) furnace annealed and Rapid Thermally Processed (RTP), 100keV implants of 1 and 3×10l5/cm2 doses of Ga. The results show that for RTP an extremely high substitutional concentration of Gallium, in excess of 3×1020/cm3 can be obtained with approximately 100% electrical activation, resulting in highly conductive very shallow p type layers.

Beam Annealing of Ion-Implanted Gaas and Inp

1980 ◽  
Vol 1 ◽  
Author(s):  
J. C. C. Fan ◽  
R. L. Chapman ◽  
J. P. Donnelly ◽  
G. W. Turner ◽  
C. O. Bozler
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Fermi Level ◽  
Laser Annealing ◽  
Electrical Activation ◽  
Fermi Level Pinning ◽  
P Type ◽  
Conversion Efficiencies ◽  
Ion Implanted

ABSTRACTA scanned cw Nd: YAG laser was used to anneal ion-implanted GaAs and InP wafers. Measurements show that electrical activation is greater for p-type than for n-type dopants in GaAs, while in InP, the opposite is observed. A simple Fermi-level pinning model is presented to explain not only the electrical properties we have measured, but also those observed by other workers. We have fabricated GaAs and InP solar cells with junctions formed by ion implantation followed by laser annealing. The GaAs cells have much better conversion efficiencies than the InP cells, and this difference can be explained in terms of the model.

In-Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
C. R. Cho ◽  
N. Yarykin ◽  
G. A. Rozgonyi ◽  
R. A. Zuhr
Keyword(s):  
Complex Formation ◽  
Ion Implantation ◽  
Point Defect ◽  
Charge State ◽  
Defect Generation ◽  
Defect Clusters ◽  
Type Silicon ◽  
P Type ◽  
Ion Implanted

ABSTRACTThe formation of vacancy-related defects in n-type silicon has been studied immediately after implantation of He, Si, or Ge ions at 85 K using in-situ DLTS. A-center concentrations in He-implanted samples reach a maximum immediately after implantation, whereas, with Si or Ge ion implanted samples they continuously increase during subsequent anneals. It is proposed that defect clusters, which emit vacancies during anneals, are generated in the collision cascades of Si or Ge ions. An illumination-induced suppression of A-center formation is seen immediately after implantation of He ions at 85 K. This effect is also observed with Si or Ge ions, but only after annealing. The suppression of vacancy complex formation via photoexcitation is believed to occur due to an enhanced recombination of defects during ion implantation, and results in reduced number of vacancies remaining in the defect clusters. In p-type silicon, a reduction in K-center formation and an enhanced migration of defects are concurrently observed in the illuminated sample implanted with Si ions. These observations are consistent with a model where the injection of excess carriers modifies the defect charge state and impacts their diffusion.

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

2009 ◽  
Vol 156-158 ◽  
pp. 493-498
Author(s):  
Ming Hung Weng ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Electrical Activation ◽  
Structural Defects ◽  
High Resistivity ◽  
Al Alloy ◽  
High Temperature Annealing ◽  
Capping Layer ◽  
P Type ◽  
Ion Implanted

This paper reports a detailed study of the electrical activation and the surface morphology of 4H-SiC implanted with different doping ions (P for n-type doping and Al for p-type doping) and annealed at high temperature (1650–1700 °C) under different surface conditions (with or without a graphite capping layer). The combined use of atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning capacitance microscopy (SCM) allowed to clarify the crucial role played by the implant damage both in evolution of 4H-SiC surface roughness and in the electrical activation of dopants after annealing. The high density of broken bonds by the implant makes surface atoms highly mobile and a peculiar step bunching on the surface is formed during high temperature annealing. This roughness can be minimized by using a capping layer. Furthermore, residual lattice defects or precipitates were found in high dose implanted layers even after high temperature annealing. Those defects adversely affect the electrical activation, especially in the case of Al implantation. Finally, the electrical properties of Ni and Ti/Al alloy contacts on n-type and p-type implanted regions of 4H-SiC were studied. Ohmic behavior was observed for contacts on the P implanted area, whilst high resistivity was obtained in the Al implanted layer. Results showed a correlation of the electrical behavior of contacts with surface morphology, electrical activation and structural defects in ion-implanted, particularly, Al doped layer of 4H-SiC.

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

1999 ◽  
Vol 74 (9) ◽  
pp. 1263-1265 ◽  
Author(s):  
C. R. Cho ◽  
N. Yarykin ◽  
R. A. Brown ◽  
O. Kononchuk ◽  
G. A. Rozgonyi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Type Silicon ◽  
P Type

scholarly journals Техника электрохимического вольт-фарадного профилирования сильно легированных структур с резким профилем распределения примеси

2019 ◽  
Vol 53 (2) ◽  
pp. 281 ◽  
Author(s):  
Д.С. Фролов ◽  
Г.Е. Яковлев ◽  
В.И. Зубков
Keyword(s):  
Ion Implantation ◽  
Doping Profile ◽  
Electrochemical Capacitance ◽  
Optimal Measurement ◽  
Type Silicon ◽  
Capacitance Voltage ◽  
Silicon Structures ◽  
Heavily Doped ◽  
P Type ◽  
Selection Of

AbstractThe specific features of applying electrochemical capacitance–voltage profiling to investigate heavily doped structures with a sharp doping profile are considered. Criteria are presented, and recommendations are given for selection of the optimal measurement parameters, and the necessity of increasing the frequency, at which the capacitance is measured during profiling, is substantiated. The described procedure is considered by the example of profiling p -type silicon structures with ion implantation as well as n -GaAs epitaxial and substrate structures for p HEMT devices.

n–p Junction formation in p-type silicon by hydrogen ion implantation

2002 ◽  
Vol 72 (1-4) ◽  
pp. 285-290 ◽  
Author(s):  
D Barakel ◽  
A Ulyashin ◽  
I Périchaud ◽  
S Martinuzzi
Keyword(s):  
Ion Implantation ◽  
Hydrogen Ion ◽  
Type Silicon ◽  
Junction Formation ◽  
P Type ◽  
Hydrogen Ion Implantation
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