Excimer Laser-Induced Shallow Diffusion of Boron

1986 ◽  
Vol 71 ◽  
Author(s):  
S. Kato ◽  
T. Nagahori ◽  
S. Matsumoto ◽  
T. Fujioka
Keyword(s):  
Energy Density ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Silicon Substrate ◽  
Laser Energy ◽  
Gas Pressure ◽  
Laser Energy Density ◽  
Junction Depth ◽  
Arf Excimer Laser ◽  
Probe Measurements

AbstractThe very shallow junction of boron has been formed by the irradiation of ArF excimer laser on silicon substrate set in BF3 ambient. The sheet resistance decreases with the increase of the number of pulses and saturates above 150 pulses. It also decreases with increasing both gas pressure and laser energy density. The junction depth increases with increasing the number of pulses, ranging from about 400 Å to 2000 Å. It is confirmed from SIMS and four-point probe measurements that boron atoms diffused are electrically activated up to the concentration of about 1020cm−3.

Fast-Pulse Excimer-Laser-Induced Processes in a-Si:H

1989 ◽  
Vol 164 ◽  
Author(s):  
K. Winer ◽  
R.Z. Bachrach ◽  
R.I. Johnson ◽  
S.E. Ready ◽  
G.B. Anderson ◽  
...  
Keyword(s):  
Energy Density ◽  
Excimer Laser ◽  
Impurity Concentration ◽  
Laser Annealing ◽  
Laser Energy ◽  
Laser Energy Density ◽  
Excimer Laser Annealing ◽  
Near Surface ◽  
Pulse Excimer Laser ◽  
Fast Pulse

AbstractThe effects of fast-pulse excimer laser annealing of a-Si:H were investigated by measurements of electronic transport properties and impurity concentration depth profiles as a function of incident laser energy density. The dc dark conductivity of laser-annealed, highly-doped a-Si:H increases by a factor of ∼350 above a sharp laser energy density threshold whose magnitude increases with decreasing impurity concentration and which correlates with the onset of hydrogen evolution from and crystallization of the near-surface layer. The similarities between the preparation and properties of laser-crystallized a-Si:H and pc-Si:H are discussed.

Excimer Laser Induced Crystallization of Amorphous Silicon Near Threshold

1989 ◽  
Vol 157 ◽  
Author(s):  
R.Z. Bachrach ◽  
K. Winer ◽  
J.B. Boyce ◽  
F.A. Ponce ◽  
S.E. Ready ◽  
...  
Keyword(s):  
Energy Density ◽  
Laser Beam ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Energy ◽  
Laser Energy Density ◽  
Square Root ◽  
Threshold Behavior ◽  
Sharp Threshold ◽  
Induced Crystallization

ABSTRACTUsing a suitably homogenized excimer laser beam, we have shown that the threshold for crystallization of amorphous silicon is well defined and exhibits a square root dependence on the laser energy density above threshold. This sharp threshold behavior can be exploited in a number of ways.

Effect of Excimer Laser Annealing on Optical Properties of GaN Films Deposited by R.F. Magnetron Sputtering

2001 ◽  
Vol 693 ◽  
Author(s):  
Man Young Sung ◽  
Woong-Je Sung ◽  
Yong-Il Lee ◽  
Chun-Il Park ◽  
Woo-Boem Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Laser Energy ◽  
Laser Energy Density ◽  
Excimer Laser Annealing ◽  
Zno Buffer Layer

Abstract:GaN thin films on sapphire were grown by RF magnetron sputtering with ZnO buffer layer. The tremendous mismatch between the lattices of GaN and sapphire can be partly overcome by the use of thin buffer layer of ZnO. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The properties of the sputtered GaN are strongly dependent on ZnO buffer layer thickness. The optimum thickness of ZnO buffer layer is around 30nm. Using XRD analysis, we have found the optimal substrate temperature which can grow high quality GaN thin film. In addition, the effect of excimer laser annealing(ELA) on structural and electrical properties of GaN thin films was investigated. The surface roughness and images according to the laser energy density were investigated by atomic force microscopy(AFM) and it was confirmed that the crystallization was improved by increasing laser energy density.

Low Temperature Laser-Doping Process Using PSG and BSG Films for Poly-Si TFTs

2000 ◽  
Vol 621 ◽  
Author(s):  
Cheon-Hong Kim ◽  
Sang-Hoon Jung ◽  
Jae-Hong Jeon ◽  
Min-Koo Han
Keyword(s):  
Energy Density ◽  
Low Temperature ◽  
Sheet Resistance ◽  
Laser Energy ◽  
Surface Concentration ◽  
Laser Pulses ◽  
Laser Energy Density ◽  
Silicon Thin Film ◽  
Laser Doping ◽  
Si Films

ABSTRACTA simple low-temperature excimer-laser doping process employing phosphosilicate glass (PSG) and borosilicate glass (BSG) films as dopant sources is proposed in order to form source and drain regions for polycrystalline silicon thin film transistors (poly-Si TFTs). We have successfully controlled sheet resistance and dopant depth profile of doped poly-Si films by varying PH3/SiH4 flow ratio, laser energy density and the number of laser pulses. The penetration depth and the surface concentration of dopants were increased with increasing laser energy density and the number of laser pulses. The minimum sheet resistance of 450ω/ for phosphorus (P) doping and 1100ω/ for boron (B) doping were successfully obtained. Our experimental results show that the proposed laser-doping process is suitable for source/drain formation of poly-Si TFTs.

Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  
Keyword(s):  
Grain Size ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Si Films

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

Phosphorus and Boron Doping of Silicon Thin Films Using ArF Excimer Laser

1991 ◽  
Vol 236 ◽  
Author(s):  
A. Slaoui ◽  
M. Elliq ◽  
H. Pattyn ◽  
E. Fogarassy ◽  
S. De Unamuno ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Excimer Laser ◽  
Silicon Film ◽  
Boron Doping ◽  
Electrical Characteristics ◽  
Silicon Thin Films ◽  
Shallow Junctions ◽  
Doping Technique ◽  
Arf Excimer Laser ◽  
B Doping

AbstractThis work describes phosphorus (P) and boron (B) doping of polysilicon filns deposited on quartz. Doping is achieved by means of a pulsed ArF excimer laser to melt a controlled thickness of amorphous or polycristalline silicon film coated with a spinon silicate glass (SOG) film containing the dopant (P or B). We have investigated the influence of doping parameters such as laser fluence, number of shots and dopant film thickness on the sheet resistance and the incorporation rate. From these results, we have shown that high doped, shallow junctions presenting sheet resistance lower than 5 kΩ/∠ can be obtained. Poly-Si TFT's with good electrical characteristics were successfully fabricated using this doping technique.

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