Excimer Laser Induced Crystallization of Amorphous Silicon Near Threshold
Keyword(s):
ABSTRACTUsing a suitably homogenized excimer laser beam, we have shown that the threshold for crystallization of amorphous silicon is well defined and exhibits a square root dependence on the laser energy density above threshold. This sharp threshold behavior can be exploited in a number of ways.
Keyword(s):
Keyword(s):
2014 ◽
Vol 50
(1)
◽
pp. 1-4
◽
Keyword(s):
Keyword(s):
2019 ◽
Vol 25
(9)
◽
pp. 1506-1515
◽
Keyword(s):