Strength-porosity relationship of nanoporous MSSQ films characterised by Brillouin Light Scattering and Surface Acoustic Wave Spectroscopy

2002 ◽  
Vol 716 ◽  
Author(s):  
C.M. Flannery ◽  
T. Wittkowski ◽  
K. Jung ◽  
B. Hillebrands ◽  
M.R. Baklanov

AbstractNanoporous Methylsilsesquioxane films are a leading candidate for low dielectric constant (low-κ) materials for microelectronic interconnect. Mechanical strength reduces rapidly with lower κ (increasing porosity) however, and there is a lack of techniques to characterize these properties in the κ∼2 range. This work reports application of surface acoustic wave spectroscopy and Brillouin light scattering to characterization of density/porosity and Young's modulus values of a range of Methylsilsesquioxane films from different manufacturers. We show that the results are validated by independent measurements and that nanoindentation measurements consistently overestimate stiffness. The behaviour of 3 sets of films show different stiffness-porosity relationships, the initially stiffer materials declining more rapidly with increasing porosity than the softer materials. This has important consequences for stiffness properties in the κ<2 region.

2007 ◽  
Vol 50 (6) ◽  
pp. 1803 ◽  
Author(s):  
Rangaswamy Navamathavan ◽  
An Soo Jung ◽  
Hyun Seung Kim ◽  
Young Jun Jang ◽  
Chi Kyu Choi ◽  
...  

2013 ◽  
Vol 1561 ◽  
Author(s):  
M.A Jithin ◽  
Lakshmi Ganapathi Kolla ◽  
Navakanta Bhat ◽  
S. Mohan ◽  
Yuichiro Morozumi ◽  
...  

ABSTRACTIn this study, synthesis and characterization of rutile-Titanium dioxide (TiO2) thin films using pulsed DC Magnetron Sputtering at room temperature, along with the fabrication and characterization of MIM capacitors have been discussed. XPS and RBS data show that the films are stoichiometric and have compositional uniformity. The influence of electrode materials on electrical characteristics of the fabricated MIM capacitors has been studied. The Al/TiO2/Al based capacitors show low capacitance density (9 fF/μm2) with low dielectric constant (K=25) and high EOT (3.67 nm) due to low dielectric constant TiO2 phase formation on Al/Si substrate. On the other hand, Ru/TiO2/Ru based capacitors show high capacitance density (49 fF/μm2) with high dielectric constant (K=130) and low EOT (0.7nm) values at high frequency (100 KHz) due to high dielectric constant phase (rutile) formation of TiO2, on Ru/Si substrate. Raman spectra confirm that the films deposited on Ru/Si substrate show the rutile phase.


1998 ◽  
Vol 511 ◽  
Author(s):  
Eva E. Simonyi ◽  
K.-W. Lee ◽  
Robert F. Cook ◽  
Eric G. Liniger ◽  
James Speidell

ABSTRACTSpin-on glasses are candidates in the microelectronics industry as low dielectric constant insulating layers. Spin-on glasses are very brittle materials. This paper discusses measurement problems as relevant to the characterization of a brittle material by the indentation technique. As for all polymeric materials curing temperature is the most important preparation parameter. There is a correlation between hardness, Young's modulus, the onset of cracking with curing temperature. This dependence on curing temperature is also expressed by the change in Si-H bond density as shown by FTIR data. Life expectancy or aging characteristics were also investigated for these features. As an example results on silsesquioxane spin -on glasses are presented.


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