A Model for Boron T.E.D. in Silicon: Full Couplings of Dopant with Free and Clustered Interstitials

2002 ◽  
Vol 717 ◽  
Author(s):  
F. Boucard ◽  
D. Mathiot ◽  
E. Guichard ◽  
P. Rivallin
Keyword(s):  
Point Defects ◽  
Diffusion Mechanism ◽  
Low Energy ◽  
The Self ◽  
Large Set ◽  
Dopant Diffusion ◽  
Experimental Conditions ◽  
Enhanced Diffusion ◽  
Equilibrium Reactions ◽  
Fully Coupled

AbstractIn this contribution we present a model for transient enhanced diffusion of boron in silicon. This model is based on the usual pair diffusion mechanism including non-equilibrium reactions between the dopant and the free point defects, taking into account their various charge states. In addition to, and fully coupled with the dopant diffusion we model the growth and dissolution of the interstitials and boron interstitials clusters associated with the anneal of the self-interstitial supersaturation created by the implantation step. It is thus possible to simulate a rather large set of experimental conditions, from conventional predeposition steps, to RTA after low energy implantation.

From the Mystery to the Understanding of the Self-Interstitials in Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
W. Frank ◽  
A. Seeger ◽  
U. Gösele
Keyword(s):  
High Temperature ◽  
The Self ◽  
Experimental Conditions ◽  
Group V ◽  
Group Iii ◽  
Enhanced Diffusion ◽  
Self Diffusion ◽  
Thermally Activated ◽  
Temperature Equilibrium ◽  
K Concentration

ABSTRACTOur present knowledge on self-interstitials in silicon and the rôle these defects play under widely different experimental conditions are surveyed. In particular, the following phenomena involving self-interstitials either in supersaturations or under high-temperature thermal-equilibrium conditions are considered: mobility-enhanced diffusion of self-interstitials below liquid-helium temperature, thermally activated diffusion of self-interstitials at inter-mediate temperatures (14O K to 600 K), concentration-enhanced diffusion of Group-III or Group-V elements in silicon at higher temperatures, and— as examples for high-temperature equilibrium phenomena — self-diffusion and diffusion of gold in silicon. This leads to the picture that the self-interstitials in silicon may occur in different electrical charge states and possess dumbbell configurations or are extended over several atomic volumes at intermediate or high temperatures, respectively.

Effects of Interstitial Clustering on Transient Enhanced Diffusion of Boron in Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Solmi ◽  
S. Valmorri
Keyword(s):  
Diffusion Mechanism ◽  
Boron Diffusion ◽  
Experimental Conditions ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Good Account ◽  
Diffusion Enhancement ◽  
Heavily Doped ◽  
Kinetics Of ◽  
New Phase

AbstractA simulation model for Boron diffusion which takes into account the aggregation of the excess interstitials in clusters, and subsequently, the dissolution of these defects, is proposed. The interstitial supersaturation and generation rate are determined according to the classical theory of nucleation and growth of particles, in analogy with the precipitation of a new phase in heavily doped silicon. The clusters are considered as precipitates formed by interstitial Si atoms. The B diffusion is modelled on the basis of the dopant-interstitial pair diffusion mechanism. The clusters dissolution during annealing maintains nearly constant, for a long period, the interstitial supersaturation and the related enhancement of the boron diffusion. This gives a good account of the diffusion results over a large range of experimental conditions. Furthermore, this approach describes most of the behavior of the transient enhanced diffusion (TED), like the temperature dependence of the level of the B diffusion enhancement, the dependence of the duration of the phenomenon on implanted dose, and the scarce dependence on the damage distribution in depth. The results of the simulations are compared with experimental data on the kinetics of interstitial cluster dissolution and of B TED.

Ultra-Low Energy Boron Implants in Crystalline Silicon: Atomic Transport Properties and Electrical Activation

1999 ◽  
Vol 568 ◽  
Author(s):  
E. Napolitani ◽  
A. Carnera ◽  
V. Privitera ◽  
A. La Magna ◽  
E. Schroer ◽  
...  
Keyword(s):  
Transport Properties ◽  
Point Defects ◽  
Crystalline Silicon ◽  
Low Energy ◽  
Electrical Activation ◽  
Epitaxial Silicon ◽  
High Concentration ◽  
Enhanced Diffusion ◽  
Atomic Transport ◽  
Wide Range

ABSTRACTWe investigated the atomic transport properties and electrical activation of boron in crystalline epitaxial silicon after ultra-low energy ion implantation (0.25–1 keV) and rapid thermal annealing (750–1100 °C). A wide range of implant doses was investigated (3×1012-1×105/cm2). A fast Transient Enhanced Diffusion (TED) pulse is observed involving the tail of the implanted Boron, the profile displacement being dependent on the implant dose. The excess of interstitials able to promote enhanced diffusion of implanted boron occurs, provided the implant dose is high enough to generate a significant total number of point defects. The Boron diffusion following the fast initial TED pulse can be described by the equilibrium diffusion equations.The electrical activation of ultra-shallow implants is hard to achieve, due to the high concentration of dopant and point defects confined in a very shallow layer that significantly contributes to the formation of clusters and complex defects. Provided a correct combination of annealing temperatures and times for these ultra-shallow implants is chosen, however, a sheet resistance 500 Δ/square with a junction depth below 0.1μm can be obtained, which has a noteworthy technological relevance for the future generations of semiconductor devices.

Effects of Interstitial Clustering on Transient Enhanced Diffusion of Boron in Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
S. Solmi ◽  
S. Valmorri
Keyword(s):  
Diffusion Mechanism ◽  
Boron Diffusion ◽  
Experimental Conditions ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Good Account ◽  
Diffusion Enhancement ◽  
Heavily Doped ◽  
Kinetics Of ◽  
New Phase

AbstractA simulation model for Boron diffusion which takes into account the aggregation of the excess interstitials in clusters, and subsequently, the dissolution of these defects, is proposed. The interstitial supersaturation and generation rate are determined according to the classical theory of nucleation and growth of particles, in analogy with the precipitation of a new phase in heavily doped silicon. The clusters are considered as precipitates formed by interstitial Si atoms. The B diffusion is modelled on the basis of the dopant-interstitial pair diffusion mechanism. The clusters dissolution during annealing maintains nearly constant, for a long period, the interstitial supersaturation and the related enhancement of the boron diffusion. This gives a good account of the diffusion results over a large range of experimental conditions. Furthermore, this approach describes most of the behavior of the transient enhanced diffusion (TED), like the temperature dependence of the level of the B diffusion enhancement, the dependence of the duration of the phenomenon on implanted dose, and the scarce dependence on the damage distribution in depth. The results of the simulations are compared with experimental data on the kinetics of interstitial cluster dissolution and of B TED.

Ab Initio Calculations of Kinetic Properties in ZrC and TiC Carbides

2011 ◽  
Vol 172-174 ◽  
pp. 990-995 ◽  
Author(s):  
Vsevolod I. Razumovskiy ◽  
Pavel A. Korzhavyi ◽  
Andrei V. Ruban
Keyword(s):  
Point Defects ◽  
First Principles ◽  
Reasonable Agreement ◽  
Nearest Neighbor ◽  
Diffusion Mechanism ◽  
The Self ◽  
Kinetic Properties ◽  
Self Diffusion ◽  
Metal Atoms ◽  
And Diffusion

Self-diffusion of the metal and carbon atoms in TiC and ZrC carbides is studied by first principles methods. Our calculations yield point defects energies, vacancy jump barriers and diffusion pre-factors in TiC and ZrC. The results are in reasonable agreement with the available experimental data and suggest that the self-diffusion mechanism for metal atoms in these carbides may involve nearest-neighbor vacancy pairs (one metal and one carbon vacancy).

STEREOTYPE THREAT AND STEREOTYPE LIFT: THE CASE OF 10 YEAR OLD GIRLS AND BOYS

2016 ◽  
Vol 12 (4) ◽  
pp. 21-32
Author(s):  
Anna Kwiatkowska ◽  
Małgorzata Mróz
Keyword(s):  
Stereotype Threat ◽  
Cognitive Performance ◽  
Significant Interaction ◽  
Self Esteem ◽  
The Self ◽  
Experimental Conditions ◽  
Significant Interaction Effect ◽  
Significant Drop ◽  
Stereotype Lift ◽  
And Performance

The aim of this study was to examine the effects of stereotypical and counter-stereotypicalinformation on the self-esteem and cognitive performance of 10-year-old children. Our sampleconsisted of 37 girls and 37 boys. Children were presented with 10 “mathematical” puzzles in threeexperimental conditions: stereotypical (boys are better), counter-stereotypical (girls are better), andthe control condition (no particular information). Self-esteem was measured using a non-verbaltask. The results showed a significant interaction effect of “condition x sex” on self-esteem andperformance. Girls revealed no significant differences between control and experimental conditions,while boys showed a significant drop in self-esteem and performance in the counter-stereotypicalcondition as compared to the control condition and a significant lift in self-esteem and performancein the stereotypical condition as compared to the control condition.

scholarly journals Low-Energy Electron Damage to Condensed-Phase DNA and Its Constituents

2021 ◽  
Vol 22 (15) ◽  
pp. 7879
Author(s):  
Yingxia Gao ◽  
Yi Zheng ◽  
Léon Sanche
Keyword(s):  
Condensed Phase ◽  
Genetic Material ◽  
High Energy ◽  
Dna Lesions ◽  
Low Energy ◽  
Experimental Investigations ◽  
Experimental Conditions ◽  
Strand Breaks ◽  
Sequence Of Events ◽  
Wide Range

The complex physical and chemical reactions between the large number of low-energy (0–30 eV) electrons (LEEs) released by high energy radiation interacting with genetic material can lead to the formation of various DNA lesions such as crosslinks, single strand breaks, base modifications, and cleavage, as well as double strand breaks and other cluster damages. When crosslinks and cluster damages cannot be repaired by the cell, they can cause genetic loss of information, mutations, apoptosis, and promote genomic instability. Through the efforts of many research groups in the past two decades, the study of the interaction between LEEs and DNA under different experimental conditions has unveiled some of the main mechanisms responsible for these damages. In the present review, we focus on experimental investigations in the condensed phase that range from fundamental DNA constituents to oligonucleotides, synthetic duplex DNA, and bacterial (i.e., plasmid) DNA. These targets were irradiated either with LEEs from a monoenergetic-electron or photoelectron source, as sub-monolayer, monolayer, or multilayer films and within clusters or water solutions. Each type of experiment is briefly described, and the observed DNA damages are reported, along with the proposed mechanisms. Defining the role of LEEs within the sequence of events leading to radiobiological lesions contributes to our understanding of the action of radiation on living organisms, over a wide range of initial radiation energies. Applications of the interaction of LEEs with DNA to radiotherapy are briefly summarized.

Direct determination of the self-diffusion mechanism in bccβ-titanium

1989 ◽  
Vol 39 (8) ◽  
pp. 5025-5034 ◽  
Author(s):  
G. Vogl ◽  
W. Petry ◽  
Th. Flottmann ◽  
A. Heiming
Keyword(s):  
Diffusion Mechanism ◽  
Direct Determination ◽  
The Self ◽  
Self Diffusion

Radiative relaxation of low-energy electron excitations and point defects in beryllium oxide

1996 ◽  
Vol 39 (11) ◽  
pp. 1067-1081 ◽  
Author(s):  
A. V. Kruzhalov ◽  
I. N. Ogorodnikov ◽  
S. V. Kudyakov
Keyword(s):  
Point Defects ◽  
Beryllium Oxide ◽  
Low Energy ◽  
Energy Electron ◽  
Radiative Relaxation ◽  
Low Energy Electron ◽  
Electron Excitations

scholarly journals Self- and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer Structures

2002 ◽  
Vol 719 ◽  
Author(s):  
Ian D. Sharp ◽  
Hartmut A. Bracht ◽  
Hughes H. Silvestri ◽  
Samuel P. Nicols ◽  
Jeffrey W. Beeman ◽  
...  
Keyword(s):  
Multilayer Structure ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Processes ◽  
Quantitative Description ◽  
Multilayer Structures ◽  
Dopant Diffusion ◽  
Enhanced Diffusion ◽  
Self Diffusion ◽  
Boron Doped ◽  
P Type

AbstractIsotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. 30Si was used as a tracer through a multilayer structure of alternating natural Si and enriched 28Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850°C and 1100°C. A specially designed ion-implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

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