Field Effect Transistors of BTQBT and its Derivatives

2002 ◽  
Vol 725 ◽  
Author(s):  
Masaki Takada ◽  
Yoshiro Yamashita ◽  
Hirokazu Tada
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Room Temperature ◽  
Film Growth ◽  
Field Effect Transistors ◽  
Growth Conditions ◽  
Organic Transistors ◽  
Semiconducting Material ◽  
P Type

AbstractWe have prepared and characterized thin film field effect transistors (FETs) of bis-(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole) (BTQBT) and its derivatives. Preparation and characterization of the films were carried out under ultrahigh vacuum condition. Most materials examined showed p-type semiconducting behaviors. Among p-type molecules, BTQBT films deposited at room temperature showed the highest mobility and on/off ratio of 0.2 cm2/Vs and 108, respectively, at optimal film growth conditions. These performances are almost comparable to those of pentacene and polythiophene thin films, indicating that BTQBT molecule is a prominent semiconducting material for high-speed organic transistors. It was also found that a tetracyanoquinodimethane (TCNQ) derivative showed an n-type semiconducting behavior with an electron mobility of 8.9 x 10-4 cm2/Vs.

Enhanced Mobility of Organic Field-Effect Transistors with Epitaxially Grown C60 Film by in-situ Heat Treatment of the Organic Dielectric

2005 ◽  
Vol 871 ◽  
Author(s):  
Th. B. Singh ◽  
N. Marjanovic ◽  
G. J. Matt ◽  
S. Günes ◽  
N. S. Sariciftci ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Fields ◽  
Field Effect ◽  
Film Growth ◽  
Field Effect Transistors ◽  
Growth Conditions ◽  
Initial Growth ◽  
Organic Field Effect Transistors ◽  
Enhanced Mobility ◽  
High Electric Fields

AbstractElectron mobilities were studied as a function of thin-film growth conditions in hot wall epitaxially grown C60 based field-effect transistors. Mobilities in the range of ∼ 0.5 to 6 cm2/Vs are obtained depending on the thin-film morphology arising from the initial growth conditions. Moreover, the field-effect transistor current is determined by the morphology of the film at the interface with the dielectric, while the upper layers are less relevant to the transport. At high electric fields, a non-linear transport has been observed. This effect is assigned to be either because of the dominance of the contact resistance over the channel resistance or because of the gradual move of the Fermi level towards the band edge as more and more empty traps are filled due to charge injection.

Submicrometer p-type SiGe modulation-doped field-effect transistors for high speed applications

1997 ◽  
Vol 35 (1-4) ◽  
pp. 257-260 ◽  
Author(s):  
I. Adesida ◽  
M. Arafa ◽  
K. Ismail ◽  
J.O. Chu ◽  
B.S. Meyerson
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
P Type

scholarly journals Isolation and Characterization of the Unexpected 1-N-Octyloxyperopyrene: A Solution-Processable P-Type Organic Semi-Conductor

2019 ◽  
Author(s):  
Marta Martínez-Abadía ◽  
Gabriella Antonicelli ◽  
Akinori Saeki ◽  
Manuel Melle-Franco ◽  
Aurelio Mateo-Alonso
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Isolation And Characterization ◽  
Polycyclic Aromatic ◽  
P Type ◽  
Liquid Deposition

<div><div><div><p>The synthesis and optical, electrochemical, thermal and electrical characterization of a new and unexpected 1-n-octyloxyperopyrene is reported. The structure of 1-n- octyloxyperopyrene has been unambiguously established by single crystal X-ray diffraction. The solubility of this polycyclic aromatic hydrocarbon, endowed by the alkoxy substituent, allows the fabrication of thin film field-effect transistors by liquid deposition methods. These devices show hole mobilities up to 1.61 × 10–3 cm2 V–1 s–1.</p></div></div></div>

Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current

2018 ◽  
Vol 924 ◽  
pp. 935-938
Author(s):  
Khaled Driche ◽  
Hitoshi Umezawa ◽  
Shinya Ohmagari ◽  
Hajime Okumura ◽  
Yoshiaki Mokuno ◽  
...  
Keyword(s):  
Electron Beam ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Depletion Region ◽  
Induced Current ◽  
Electron Beam Induced Current ◽  
Effect Transistor ◽  
Lateral Gate ◽  
P Type

Lateral gate depletion expansion towards drain contact has been analyzed on p-type diamond metal-semiconductor field effect transistor by electron beam induced current. The investigation was restricted to a closed channel to simplify the study and to directly observe the expansion of the lateral depletion region. The experimental data agreed with the theoretical model given in the literature.

scholarly journals Inexpensive Measuring System for the Characterization of Organic Transistors

2018 ◽  
Vol 2018 ◽  
pp. 1-9
Author(s):  
Clara Pérez-Fuster ◽  
José Vicente Lidón-Roger ◽  
Laura Contat-Rodrigo ◽  
Eduardo García-Breijo
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Measuring System ◽  
Organic Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Semiconductor Devices ◽  
Measuring Module ◽  
Four Quadrant

A measuring module has been specifically designed for the electrical characterization of organic semiconductor devices such as organic field effect transistors (OFETs) and organic electrochemical transistors (OECTs) according to the IEEE 1620-2008 standard. This device has been tested with OFETs based on 6,13-bis(triisopropylsilylethinyl)pentacene (TIPS-pentacene). The measuring system has been constructed using a NI-PXIe-1073 chassis with integrated controller and two NI-PXI-4132 programmable high-precision source measure units (SMUs) that offer a four-quadrant ± 100 V output, with resolution down to 10 pA. LabVIEW™ has been used to develop the appropriate program. Most of the main OFET parameters included in the IEEE 1620 standard can be measured by means of this device. Although nowadays expensive devices for the characterization of Si-based transistors are available, devices for the characterization of organic transistors are not yet widespread in the market. Fabrication of a specific and flexible module that can be used to characterize this type of transistors would provide a powerful tool to researchers.

scholarly journals Facile Synthesis of Triphenylamine Based Hyperbranched Polymer for Organic Field Effect Transistors

Nanomaterials ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1787 ◽  
Author(s):  
Chinna Bathula ◽  
Alfred Appiagyei ◽  
Hemraj Yadav ◽  
Ashok K. ◽  
Sivalingam Ramesh ◽  
...  
Keyword(s):  
Hyperbranched Polymer ◽  
Field Effect ◽  
Optical Band Gap ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Facile Synthesis ◽  
Homo And Lumo ◽  
P Type ◽  
Maximum Field

In this study, we reported the synthesis and characterization of a novel hyperbranched polymer (HBPs) tris[(4-phenyl)amino-alt-4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b’]dithiophene] (PTPABDT) composed of benzo[1,2-b:4,5-b’]dithiophene (BDT) and triphenyleamine (TPA) constituent subunits by A3 + B2 type Stille’s reaction. An estimated optical band gap of 1.69 eV with HOMO and LUMO levels of −5.29 eV and −3.60 eV, respectively, as well as a high thermal stability up to 398 °C were characterized for the synthesized polymer. PTPABDT fabricated as an encapsulated top gate/bottom contact (TGBC), organic field effect transistors (OFET) exhibited a p-type behavior with maximum field-effect mobility (µmax) and an on/off ratio of 1.22 × 10−3 cm2 V−1 s−1 and 7.47 × 102, respectively.

High speed p-type SiGe modulation-doped field-effect transistors

1996 ◽  
Vol 17 (3) ◽  
pp. 124-126 ◽  
Author(s):  
M. Arafa ◽  
P. Fay ◽  
K. Ismail ◽  
J.O. Chu ◽  
B.S. Meyerson ◽  
...  
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
P Type
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