Single-Source Approach for The Growth of I-III-VI Thin Films

2002 ◽  
Vol 730 ◽  
Author(s):  
Mohammad Afzaal ◽  
Theivanayagam C. Deivaraj ◽  
Paul O'Brien ◽  
Jin-Ho Park ◽  
Jagadese J. Vittal

AbstractThe ternary chalcopyrite semiconductors I-III-VI are currently used for photovoltaic solar cell applications. In this study, AgIn5S8 thin films were prepared from a series of single-source bimetalorganic precursors, e.g. [(PPh3)2AgIn(SC{O}R)4] (R = alkyl) by aerosol assisted chemical vapour deposition (AA-CVD). The compounds can be used as single-source precursors for the deposition of ternary compounds (I-III-VI) by one-pot reaction using CVD process and they are found to be air stable, which is favourable in comparison with metal alkyl compounds, which are found to be pyrophoroic. The optimum growth temperature for the preparation of these films on glass and Si(100) substrates, was found to be above 350°C in terms of crystallinity, although deposition occurred at low temperatures. The films have been investigated using XRD, SEM and EDS. SEM analysis shows that all films are microcrystalline but have different morphologies depending on the growth temperatures. XRD results show evidence of the crystalline nature of these films. The results of this comprehensive study are presented and discussed.

2001 ◽  
Vol 692 ◽  
Author(s):  
Mohammad Afzaal ◽  
David Crouch ◽  
Paul O'Brien ◽  
Jin-Ho Park

AbstractThe ternary chalcopyrite semiconductor Cu(In/Ga)(Se/S)2 is currently used as an absorber layer in high efficiency thin film solar cells. In this study, various types of I-III-VI (I = Cu, III = Ga or In, VI = S or Se) thin films (CuGaS2, CuInS2 and CuInSe2) were prepared from a series of organometallic precursors, M[(S/Se)2CNMeR]n (M = Cu, In, Ga; R = alkyl) by aerosol-assisted chemical vapour deposition (AACVD). In contrast to the metal alkyl compounds, MR3 (M = In and Ga; R = alkyl), which are pyrophoric, the precursors are easy to synthesize by one-pot reactions and are air stable. The optimum growth temperature for the preparation of these films on glass substrates using aerosol-assisted chemical vapour deposition (AACVD) was found to be above 400 °C in terms of crystallinity, although deposition does occur at lower temperatures. The films have been characterised using XRPD, SEM and EDS. SEM analyses show all films are microcrystalline. XRPD results show evidence of the crystalline nature of theses films. The results of this comprehensive study are presented and discussed.


2014 ◽  
Vol 875-877 ◽  
pp. 228-231
Author(s):  
Shafique Ahmed Arain ◽  
Christopher Wilkins ◽  
Hafiz Badaruddin

Diethyl dithiocarbamate [Cd (S2CN Et2)2] complex is used to deposit the cadmium sulphide thin film at much lower temperature by Aerosol Assisted Chemical Vapour deposition (AACVD) and same precursor is used to synthesize the nanocrystals in Oleylamine at elevated temperature. Thermogravimetric analysis shows that precursor [Cd (S2CN Et2)2] decomposes in the single stage, losing 62% of total weight. Deposition of thin films at 300°C and 400°C showed the growth of CdS clusters which were made of granular crystallites. These results are confirmed by SEM analysis. Thermolysis of the precursor in oleylamine at 240°C gave the nanoparticles most of them are monodispersed spherical shape, few having mono and dipod structures. TEM images confirm the structures. XRD results show the thin films and nanoparticles have hexagonal phase of CdS.


2006 ◽  
Vol 16 (10) ◽  
pp. 966-969 ◽  
Author(s):  
Shivram S. Garje ◽  
Jamie S. Ritch ◽  
Dana J. Eisler ◽  
Mohammad Afzaal ◽  
Paul O'Brien ◽  
...  

1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.


2018 ◽  
Vol 47 (31) ◽  
pp. 10536-10543 ◽  
Author(s):  
Kelly Rees ◽  
Emanuela Lorusso ◽  
Samuel D. Cosham ◽  
Alexander N. Kulak ◽  
Geoffrey Hyett

Combining single-source precursors in aerosol assisted CVD allows control of the composition of mixed anion titanium oxynitride thin films.


2018 ◽  
Vol 47 (7) ◽  
pp. 2406-2414 ◽  
Author(s):  
Yao-Pang Chang ◽  
Andrew L. Hector ◽  
William Levason ◽  
Gillian Reid ◽  
Joshua Whittam

A new series of Mo(iv) chloride complexes with thioether and seleneoether ligands is reported; [MoCl4(nBu2E)2] (E = S, Se) function as single source precursors for the CVD of MoE2thin films.


2019 ◽  
Vol 48 (1) ◽  
pp. 117-124 ◽  
Author(s):  
Samantha L. Hawken ◽  
Ruomeng Huang ◽  
C. H. (Kees) de Groot ◽  
Andrew L. Hector ◽  
Marek Jura ◽  
...  

Reaction of activated germanium with nBu2Te2 in THF solution was shown to be more effective for the preparation of the germanium(iv) tellurolate compound, [Ge(TenBu)4], than reaction of GeCl4 with LiTenBu in THF.


2018 ◽  
Vol 479 ◽  
pp. 42-48 ◽  
Author(s):  
Kevin I.Y. Ketchemen ◽  
Sixberth Mlowe ◽  
Linda D. Nyamen ◽  
Ahmed A. Aboud ◽  
Matthew P. Akerman ◽  
...  

2016 ◽  
Vol 4 (45) ◽  
pp. 10731-10739 ◽  
Author(s):  
Amanda L. Catherall ◽  
Michael S. Hill ◽  
Andrew L. Johnson ◽  
Gabriele Kociok-Köhn ◽  
Mary F. Mahon

We report the development of a true single source precursor for the growth of zirconia thin films by aerosol-assisted chemical vapour deposition using an original family of zirconium(iv) amidate derivatives.


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