Evaluation of Monodispersed Silica Particles and Ceria Coated Silica Particles for Chemical Mechanical Polishing

2002 ◽  
Vol 732 ◽  
Author(s):  
Zhenyu Lu ◽  
Seung-Ho Lee ◽  
Egon Matijević ◽  
S. V. Babu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Oxide Films ◽  
Total Surface Area ◽  
Silica Particles ◽  
Solid Content ◽  
Mechanical Polishing ◽  
Abrasive Particles ◽  
Cu Films ◽  
Spherical Silica

AbstractThe properties of abrasive particles play a key role in chemical mechanical polishing (CMP). This study used well-defined dispersions of uniform particles, including spherical silica of varying diameters to polish Cu films and silica cores coated with nanosized ceria particles to polish oxide films. It was shown that the total surface area of the silica abrasives in the slurry controlled Cu material removal rate. However, pH, solid content, and particle size of ceria coated silica abrasives did not have a strong correlation to the removal rate of oxide films.

High-Efficiency Chemical Mechanical Polishing of Ti-6Al-4V Alloy via the Synergistic Action of H2O2 and K+ Under Alkaline Conditions

2022 ◽  
Author(s):  
Changbang Deng ◽  
Liang Jiang ◽  
Linmao Qian
Keyword(s):  
Chemical Mechanical Polishing ◽  
High Efficiency ◽  
Removal Rate ◽  
Research Work ◽  
Silica Particles ◽  
Synergistic Action ◽  
Mechanical Polishing ◽  
Alloy Surface ◽  
Alkaline Conditions ◽  
Tc4 Alloy

Abstract Ti-6Al-4V (TC4) alloy has been widely used for implants, and excellent surface quality is required for satisfactory performance. In this study, chemical mechanical polishing (CMP) was introduced to process TC4 alloy. H2O2 and K+ were used to enhance the CMP efficiency. It is revealed that, at pH 10, the material removal rate (MRR) of TC4 alloy increases with the increasing H2O2. A synergistic action between H2O2 and K+ exists under alkaline conditions. With H2O2 and at pH 10, as the K+ concentration increases, the MRR of TC4 alloy first increases and then levels off. The anions have little influence on the CMP performance. After polishing, the surface is smooth without scratches, and the substrate underneath the surface film has no processing damage. For the synergistic action, K+ ions are adsorbed on the Stern layer of the TC4 alloy surface and the silica particles, screening the surface negative charge. Firstly, OOH- produced from H2O2 and OH- can approach the TC4 alloy surface easily, promoting the corrosion. Secondly, more silica particles come into contact with the TC4 alloy surface, enhancing the interactions. Therefore, the MRR increases. The research work brings about a promising high-efficiency CMP process for titanium alloys.

A Material Removal Rate Model Considering Interfacial Micro-Contact Wear Behavior for Chemical Mechanical Polishing

2005 ◽  
Vol 127 (1) ◽  
pp. 190-197 ◽  
Author(s):  
Yeau-Ren Jeng ◽  
Pay-Yau Huang
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Hardness ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Rate Model ◽  
Abrasive Particles ◽  
Material Removal Rate Model

Chemical Mechanical Polishing (CMP) is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms. The present study proposes a CMP material removal rate model based upon a micro-contact model which considers the effects of the abrasive particles located between the polishing interfaces, thereby the down force applied on the wafer is carried both by the deformation of the polishing pad asperities and by the penetration of the abrasive particles. It is shown that the current theoretical results are in good agreement with the experimental data published previously. In addition to such operational parameters as the applied down force, the present study also considers consumable parameters rarely investigated by previous models based on the Preston equation, including wafer surface hardness, slurry particle size, and slurry concentration. This study also provides physical insights into the interfacial phenomena not discussed by previous models, which ignored the effects of abrasive particles between the polishing interfaces during force balancing.

A Material Removal Rate Model Considering Interfacial Micro-Contact Wear Behavior for Chemical Mechanical Polishing

2005 ◽  
Author(s):  
Yeau-Ren Jeng ◽  
Pay-Yau Huang
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Hardness ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Rate Model ◽  
Abrasive Particles ◽  
Material Removal Rate Model

Chemical Mechanical Polishing (CMP) is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms. The present study proposes a CMP material removal rate model based upon a micro-contact model which considers the effects of the abrasive particles located between the polishing interfaces, thereby the down force applied on the wafer is carried both by the deformation of the polishing pad asperities and by the penetration of the abrasive particles. It is shown that the current theoretical results are in good agreement with the experimental data published previously. In addition to such operational parameters as the applied down force, the present study also considers consumable parameters rarely investigated by previous models based on the Preston equation, including wafer surface hardness, slurry particle size, and slurry concentration. This study also provides physical insights into the interfacial phenomena not discussed by previous models, which ignored the effects of abrasive particles between the polishing interfaces during force balancing.

Chemical mechanical polishing of thermal oxide films using silica particles coated with ceria

2002 ◽  
Vol 17 (10) ◽  
pp. 2744-2749 ◽  
Author(s):  
Seung-Ho Lee ◽  
Zhenyu Lu ◽  
S. V. Babu ◽  
Egon Matijević
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Oxide Films ◽  
Silica Particles ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Thermal Oxide ◽  
Pure Ceria ◽  
Polish Rate

Thermal oxide covered silicon wafers were polished with slurries containing either nano-sized ceria (CeO2) or newly prepared uniform colloidal silica particles coated with ceria. The polish rate of the latter was significantly higher than that of pure ceria. The experiments were carried out using different concentrations of the abrasives at pH 4 and 10. Little effect on the polishing rates was noted when the conditions of the slurries were varied, which was explained by the compensation of two opposite polishing mechanisms.

On the Effects of Surface Forces on the Contact of a Wafer and Abrasive Particles in CMP

2008 ◽  
Author(s):  
Dinc¸er Bozkaya ◽  
Sinan Mu¨ftu¨
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Low Pressure ◽  
Surface Forces ◽  
Mechanical Polishing ◽  
Abrasive Particles ◽  
Low K

Chemical mechanical polishing (CMP) of ultra-low-k (ULK) dielectic materials is challenging, as they are susceptible to fracture under typical CMP pressures [1]. Low-pressure (lp) CMP is one of the solutions for polishing ULK dielectrics [1]. In order to implement lp-CMP the process should be optimized to maximize the material removal rate (MRR).

Chemical Mechanical Polishing for Planarization in Manufacturing Environment

1994 ◽  
Vol 337 ◽  
Author(s):  
Mukesh Desai ◽  
Rahul Jairath ◽  
Matt Stell ◽  
Robert Toiles
Keyword(s):  
Chemical Mechanical Polishing ◽  
Process Integration ◽  
Removal Rate ◽  
Oxide Films ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Manufacturing Environment ◽  
The Past ◽  
Technology Generation ◽  
Cost Of Ownership

ABSTRACTGlobal Planarization requirements of the deep sub-micron technology generation requires use of CMP as preferred planarization technique. In the past, CMP has been used extensively in the polishing of silicon wafers. However , there has been some reluctance to utilize this technology in the planarization of oxide films during IC manufacture. This has been driven primarily by issues regarding manufacturability , and therefore cost of ownership of CMP processes. Here the key process integration issues in CMP planarization of oxide films are outlined.An effect of consumable set is shown to be critical in achieving repeatable CMP performance via removal rate & non-uniformity. Various defects induced as a result of CMP are explained. Cost of ownership model is used to demonstrate the importance of minimizing such defects.

The Effects of Particle Adhesion in Chemical Mechanical Polishing

2003 ◽  
Vol 767 ◽  
Author(s):  
Zhenyu Lu ◽  
S.V. Babu ◽  
Egon Matijević
Keyword(s):  
Chemical Mechanical Polishing ◽  
Packed Column ◽  
Mechanical Polishing ◽  
Surface Films ◽  
Strong Correlations ◽  
Abrasive Particles ◽  
Spherical Silica ◽  
Alumina Particles ◽  
Slurry Flow Rate ◽  
Film Interface

AbstractThe properties of abrasive particles, and their interactions with surface films to be polished, play a key role in chemical mechanical polishing (CMP). This study applies the packed column technique for the investigation of the adhesion phenomena at the particle/film interface as a function of different slurry chemistries relevant to polishing processes. Well-defined dispersions, including uniform spherical silica and silica cores coated with nanosized ceria, as well as calcined alumina were used to represent slurry abrasives, and copper or glass beads to simulate wafers or discs. It was shown that the pH and slurry flow rate had significant effects on particle attachment and removal. The results of deposition of silica particles on copper beads in the presence of various concentrations of H2O2 and of detachment from copper beads of alumina particles, loaded at different pH values, had strong correlations to the polish rates of the metal.

Effect of Abrasive and Surfactant on Chemical Mechanical Polishing of Hard Disk Substrates

2011 ◽  
Vol 314-316 ◽  
pp. 133-136
Author(s):  
Sheng Li Wang ◽  
Zhen Xia Li ◽  
Li Bing Yang ◽  
Li Bin Liu ◽  
Yu Tian
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
High Surface ◽  
Hard Disk ◽  
Mechanical Polishing ◽  
Surfactant Adsorption ◽  
Abrasive Particles ◽  
High Surface Quality

Chemical mechanical polishing (CMP) has been a widely applied process for hard disk substrates with nickel–phosphorous (Ni–P) plated. In this paper, the effects of abrasive and surfactant on the polishing performance of hard disk substrates using prepared colloidal silica-based alkaline slurry were investigated. The experimental results indicate that the material removal rate (MRR) strongly depends on the abrasive concentration and nonionic surfactant have little influence on the material removal rate. Under the testing conditions, smaller SiO2, moderate SiO2 concentration and higher surfactant concentration can obtain high surface quality in the prepared slurry. These results have been explained by which the abrasive particles move through the cover layer caused by surfactant adsorption on the disk substrates surface being polished.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

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