CdSe Nanoparticle/Metal-Organic Inks For Printable Electronics

2002 ◽  
Vol 736 ◽  
Author(s):  
Douglas L. Schulz
Keyword(s):  
Field Effect ◽  
Organic Molecule ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Spray Deposition ◽  
Cdse Nanoparticles ◽  
Flexible Substrates ◽  
Printable Electronics ◽  
Aqueous Solvent ◽  
Metal Organic

ABSTRACTThe research objective of this project was the spray deposition of CdSe films using a nanoparticle CdSe suspension as the precursor ink. This ink consisted of CdSe nanoparticles (nano-CdSe) mixed with a “reactive dispersant” in a non-aqueous solvent. The reactive dispersant, a metal-organic molecule, served two purposes; (1) to form a dispersed CdSe suspension at room temperature, and (2) to thermally “unzip” giving CdSe and a byproduct. The CdSe thereby formed could be deposited at the grain boundaries and serve to physically and electrically connect the CdSe nanoparticles at moderate, plastic-compatible temperatures. If electronics-grade CdSe layers could be produced at low deposition temperatures, this approach may be applicable to printed CdSe-based thin film field-effect transistors (TFTs) on flexible substrates.

scholarly journals The gamma-ray irradiation sensitivity and dosimetric information instability of RADFET dosimeter

2013 ◽  
Vol 28 (4) ◽  
pp. 415-421 ◽  
Author(s):  
Milic Pejovic
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Room Temperature ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Gamma Ray Irradiation

The gamma-ray irradiation sensitivity to radiation dose range from 0.5 Gy to 5 Gy and post-irradiation annealing at room and elevated temperatures have been studied for p-channel metal-oxide-semiconductor field effect transistors (also known as radiation sensitive field effect transistors or pMOS dosimeters) with gate oxide thicknesses of 400 nm and 1 mm. The gate biases during the irradiation were 0 and 5 V and 5 V during the annealing. The radiation and the post-irradiation sensitivity were followed by measuring the threshold voltage shift, which was determined by using transfer characteristics in saturation and reader circuit characteristics. The dependence of threshold voltage shift DVT on absorbed radiation dose D and annealing time was assessed. The results show that there is a linear dependence between DVT and D during irradiation, so that the sensitivity can be defined as DVT/D for the investigated dose interval. The annealing of irradiated metal-oxide-semiconductor field effect transistors at different temperatures ranging from room temperature up to 150?C was performed to monitor the dosimetric information loss. The results indicated that the dosimeters information is saved up to 600 hours at room temperature, whereas the annealing at 150?C leads to the complete loss of dosimetric information in the same period of time. The mechanisms responsible for the threshold voltage shift during the irradiation and the later annealing have been discussed also.

Silicene field-effect transistors operating at room temperature

2015 ◽  
Vol 10 (3) ◽  
pp. 227-231 ◽  
Author(s):  
Li Tao ◽  
Eugenio Cinquanta ◽  
Daniele Chiappe ◽  
Carlo Grazianetti ◽  
Marco Fanciulli ◽  
...  
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors

Thermally and Mechanically Stable Polyimides as Flexible Substrates for Organic Field-Effect Transistors

2020 ◽  
Vol 2 (8) ◽  
pp. 3422-3432 ◽  
Author(s):  
Chun-Kai Chen ◽  
Yan-Cheng Lin ◽  
Satoshi Miyane ◽  
Shinji Ando ◽  
Mitsuru Ueda ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Flexible Substrates ◽  
Organic Field Effect Transistors

Electrostatic Spray Deposition of Highly-Crystalline TIPS Pentacene Thin Films for Fabrication of Organic Field-Effect Transistors

2012 ◽  
Vol 1501 ◽  
Author(s):  
Norio Onojima ◽  
Hiroki Saito ◽  
Naomichi Nishio ◽  
Takamasa Kato
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Spray Deposition ◽  
Solution Process ◽  
Channel Length ◽  
Organic Films ◽  
Organic Field Effect Transistors ◽  
Electrostatic Spray Deposition ◽  
Promising Solution ◽  
Electrostatic Spray

ABSTRACTThis paper demonstrates that electrostatic spray deposition (ESD) method is a promising solution process to fabricate highly-crystalline organic films (6,13-bis(triisopropylsilylethynyl) pentacene; TIPS pentacene) for the use in bottom-contact organic field-effect transistors (OFETs). We obtained large crystalline domains (i.e., molecularly-oriented domains) by using an o-DCB:acetone mixed solvent (1:1), and observed good transistor behavior in an OFET having the channel length of 20 μm.

Sign in / Sign up

Export Citation Format

Share Document