Formation of 3-Dimensionally Orientated Nano-sized Crystals in an Amorphous Alloy under Ion Beam Irradiation

2002 ◽  
Vol 739 ◽  
Author(s):  
Takuya Kamikawa ◽  
Ryuichi Tarumi ◽  
Kazuki Takashima ◽  
Yakichi Higo
Keyword(s):  
Amorphous Alloy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Face Centered Cubic ◽  
Orientation Relationships ◽  
Beam Direction ◽  
Ion Beam Irradiation ◽  
Micro Fabrication ◽  
Transmission Electron ◽  
Face Centered

ABSTRACTWe have succeeded to form three-dimensionally orientated nano-sized crystals in a Ni-P amorphous alloy under focused ion beam (FIB) irradiation. The FIB micro-fabrication was performed on an electroless deposited Ni-P amorphous alloy and thin films with a thickness of 100 nm were prepared. Transmission electron microscopy (TEM) observation for irradiated areas revealed the formation of crystallographically orientated nano-sized crystals (NCs) in the irradiated region. The grain size of NCs was less than 10 nm in diameter. Electron diffraction analysis showed that the formed NCs have a face-centered-cubic (f.c.c.) structure and the following orientation relationships among the specimen, the NCs and the FIB direction: irradiated plane // {111}f.c.c. and ion beam direction // <110>f.c.c..

Effects of P Content on Morphology of Nanocrystals Induced by FIB Irradiation in Ni-P Amorphous Alloy

2006 ◽  
Vol 960 ◽  
Author(s):  
Koji Sato ◽  
Chiemi Ishiyama ◽  
Masato Sone ◽  
Yakichi Higo
Keyword(s):  
Thin Films ◽  
Amorphous Alloy ◽  
Crystallographic Orientation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Orientation Relationships ◽  
Beam Direction ◽  
Precipitation Distribution ◽  
P Content

ABSTRACTWe studied the effects of phosphorus (P) on Ni nanocrystalline morphology formed by focused ion beam (FIB) irradiation for Ni-P amorphous alloy thin films. The P content in the amorphous alloy was varied from 8 to 12 wt.%. The nanocrystals induced by the FIB irradiation for Ni-11.8, 8.9, 7.9 wt.% amorphous alloy had an f.c.c. structure and showed unique crystallographic orientation relationships to the geometry of the focused ion beam, that is, {111}f.c.c. parallel to the irradiated plane and <110>f.c.c. parallel to the projected ion beam direction, respectively. The Ni nanocrystals precipitated like aggregates with decreasing of the P content. These results represent that the P content does not affect crystallographic orientation relationships, while influences the precipitation distribution of Ni nanocrystals generated by the FIB irradiation.

Deformation under nanoindents in Si, Ge, and GaAs examined through transmission electron microscopy

2001 ◽  
Vol 16 (12) ◽  
pp. 3347-3350 ◽  
Author(s):  
S. J. Lloyd ◽  
J. M. Molina-Aldareguia ◽  
W. J. Clegg
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Amorphous Material ◽  
Face Centered Cubic ◽  
Dislocation Generation ◽  
Transmission Electron ◽  
Face Centered

Cross sections through nanoindents on Si, Ge, and GaAs {001} were examined through transmission electron microscopy. A focused ion beam workstation was used to machine electron transparent windows through the indents. In both Si and Ge there was a transformed zone immediately under the indent composed of amorphous material and a mixture of face-centered-cubic and body-centered cubic crystals. Cracking and dislocation generation were also observed around the transformed zone. In GaAs the dominant deformation mechanism was twinning on the {11} planes. The hardness of these materials is discussed in light of these observations and their macroscopic material properties such as phase transformation pressure.

Intergrowth of Components and Ramps in Coffin-Shaped ZSM-5 Zeolite Crystals Unraveled by Focused Ion Beam-Assisted Transmission Electron Microscopy

2013 ◽  
Vol 20 (1) ◽  
pp. 42-49 ◽  
Author(s):  
Jiangbo Lu ◽  
Maarten B.J. Roeffaers ◽  
Evelyne Bartholomeeusen ◽  
Bert F. Sels ◽  
Dominique Schryvers
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Main Part ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Orientation Relationships ◽  
Displacement Boundary ◽  
Transmission Electron ◽  
Rotational Components

AbstractScanning electron microscopy, focused ion beam (FIB), and transmission electron microscopy are combined to study the intergrowth of 90° rotational components and of ramps in coffin-shaped ZSM-5 crystals. The 90° rotational boundaries with local zig-zag features between different intergrowth components are observed in the main part of crystal. Also a new kind of displacement boundary is described. At the displacement boundary there is a shift of the unit cells along the boundary without a change in orientation. Based on lamellae prepared with FIB from different positions of the ramps and crystal, the orientation relationships between ramps and the main part of the crystal are studied and the three-dimensional morphology and growth mechanism of the ramp are illustrated.

scholarly journals Using a Focused Ion Beam (FIB) System to Extract TEM-Ready Samples from Complex Metallic and Ceramic Structures

1999 ◽  
Vol 7 (2) ◽  
pp. 12-15 ◽  
Author(s):  
Lucille A. Giannuzzi ◽  
Richard Young ◽  
Pete Carleson
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Magnetic Media ◽  
Tem Analysis ◽  
Micro Fabrication ◽  
Site Specific ◽  
Transmission Electron ◽  
Two Sides

AbstractDriven by the analytical needs of microelectronics, magnetic media and micro-fabrication industries, focused ion beam (FIB) systems are now capable of milling and manipulating samples for the analysis of microstructure features having dimensions of 180 nm or less, A technique for locating and extracting site specific specimens for examination by transmission electron microscopy (TEM) has been developed. An identified feature can be located and precisely milled with an FIB system from two sides to prepare an ultrathin sample, and then extracted from the region with a glass rod micromanipulator onto a grid for TEM analysis. This specimen preparation method has been applied to semiconductor failure analysis and to the study of metallic and ceramic microsiructures with irregular topographies and complex mufti-layered components.

Patterning of Self-Oriented Nanocrystals in an Amorphous Alloy under Focused Ion Beam Irradiation

2005 ◽  
Vol 24-25 ◽  
pp. 483-486
Author(s):  
Yukata Kamibayashi ◽  
Takuya Kamikawa ◽  
Kazuki Takashima ◽  
Yakichi Higo
Keyword(s):  
Amorphous Alloy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

Crystallographic features of oriented nanocrystals induced by focused-ion-beam irradiation of an amorphous alloy

2003 ◽  
Vol 94 (9) ◽  
pp. 6108-6115 ◽  
Author(s):  
Ryuichi Tarumi ◽  
Kazuki Takashima ◽  
Yakichi Higo
Keyword(s):  
Amorphous Alloy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

Formation of oriented nanocrystals in an amorphous alloy by focused-ion-beam irradiation

2002 ◽  
Vol 81 (24) ◽  
pp. 4610-4612 ◽  
Author(s):  
R. Tarumi ◽  
K. Takashima ◽  
Y. Higo
Keyword(s):  
Amorphous Alloy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

Cross-Sectional STEM Observation of Nanoparticle-Attached Silicon Wafer: Specimen Prepared by Focused Ion-Beam

2008 ◽  
Vol 8 (3) ◽  
pp. 1518-1522 ◽  
Author(s):  
Tetsu Yonezawa ◽  
Yoshinori Yamanoi ◽  
Hiroshi Nishihara
Keyword(s):  
Scanning Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Substrate Surface ◽  
Silicon Surfaces ◽  
Ion Beam Irradiation ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Amorphous Si

A thermal hydrosilylation process could successfully immobilize 5-heptene-1-thiol-stabilized gold nanoparticles onto hydrogen-terminated silicon surfaces. In order to understand the immobilization structures, it is very important to observe the linkage between the nanoparticles and the substrate surface. For this purpose, a cross-sectional observation of gold nanoparticle-attached silicon substrate was carried out by using a high resolution scanning transmission electron microscopy (HR-STEM). The specimens were prepared by using a focused ion-beam (FIB) machine. According to the Ga ion-beam irradiation, many single-nano-sized nanoparticles were fused to grow up to larger particles and amorphous Si layers were generated.

Faceted antiphase boundaries in GaAs grown on Ge

1987 ◽  
Vol 45 ◽  
pp. 314-315
Author(s):  
N.-H. Cho ◽  
S. McKernan ◽  
C.B. Carter ◽  
K. Wagner
Keyword(s):  
Cross Section ◽  
Atomic Resolution ◽  
Face Centered Cubic ◽  
Electrical Behavior ◽  
Sphalerite Structure ◽  
Antiphase Boundaries ◽  
Transmission Electron ◽  
Face Centered ◽  
Quality Material ◽  
Simulated Images

Interest has recently increased in the possibility of growing III-V compounds epitactically on non-polar substrates to produce device quality material. Antiphase boundaries (APBs) may then develop in the GaAs epilayer because it has sphalerite structure (face-centered cubic with a two-atom basis). This planar defect may then influence the electrical behavior of the GaAs epilayer. The orientation of APBs and their propagation into GaAs epilayers have been investigated experimentally using both flat-on and cross-section transmission electron microscope techniques. APBs parallel to (110) plane have been viewed at the atomic resolution and compared to simulated images.Antiphase boundaries were observed in GaAs epilayers grown on (001) Ge substrates. In the image shown in Fig.1, which was obtained from a flat-on sample, the (110) APB planes can be seen end-on; the faceted APB is visible because of the stacking fault-like fringes arising from a lattice translation at this interface.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

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