Spectroscopic Characterization of Ion-Implanted GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
L. Chen ◽  
B. J. Skromme
Keyword(s):  
Low Temperature ◽  
High Purity ◽  
Spectroscopic Characterization ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Optical Activation ◽  
Donor Acceptor Pair ◽  
Low Temperature Photoluminescence ◽  
Do So

ABSTRACTWe investigate implantation of high purity HVPE GaN with Mg, Be, C, Zn, Cd, Ca, N, O, P, As, Ne, and Ar. After annealing at 1300 °C, the material is characterized using low temperature photoluminescence (PL). The Mg acceptors exhibit much better optical activation than Be, C, Zn, Cd, or Ca acceptors implanted and annealed under the same conditions. Acceptor-bound exciton peaks and well-resolved donor-acceptor pair bands are observed for both Mg and Zn. A broad peak centered near 2.78 eV is obtained for Cd, confirming that it is deeper than Zn. Isoelectronic As or P exhibit sharp no-phonon bound exciton lines at 2.952 and 3.200 eV, respectively. Defect-related bands centered at 2.2 and 2.35 eV are studied. Both Be and C strongly enhance the yellow (2.2 eV) PL band, but no other impurities do so, including O.

LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 415-418 ◽  
Author(s):  
Jian Wu Sun ◽  
Georgios Zoulis ◽  
Jean Lorenzzi ◽  
Nikoletta Jegenyes ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Binding Energy ◽  
Low Temperature ◽  
Lower Energy ◽  
Acceptor Pair ◽  
Zero Phonon Line ◽  
Transition Energies ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Low Temperature Photoluminescence ◽  
Acceptor Binding Energy

Ga-doped 3C-SiC layers have been grown on on-axis 6H-SiC (0001) substrates by the VLS technique and investigated by low temperature photoluminescence (LTPL) measurements. On these Ga-doped samples, all experimental spectra collected at 5K were found dominated by strong N-Ga donor-acceptor pair (DAP) transitions and phonon replicas. As expected, the N-Ga DAP zero-phonon line (ZPL) was located at lower energy (~ 86 meV) below the N-Al one. Fitting the transition energies for the N-Al close DAP lines gave 251 meV for the Al acceptor binding energy in 3C-SiC and, by comparison, 337 meV for the Ga acceptor one.

Reliable Impurity Identification in Inp

1993 ◽  
Vol 325 ◽  
Author(s):  
M. L. Schnoes ◽  
T. D. Harris ◽  
S. J. Pearton ◽  
M. A. Di Giuseppe ◽  
R. Bhat ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
High Purity ◽  
Binding Energies ◽  
Acceptor Pair ◽  
Gas Source ◽  
Donor Identification ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Gas Source Mbe

AbstractLow temperature, resonantly excited photoluminescence (PL) has proven to be the method of choice for impurity identification in GaAs. InP has suffered from insufficient impurity binding energy data to benefit similarly. We will report results of selectively-excited donor-acceptor pair spectroscopy for acceptor identification in InP. Ion implantation doping of high purity InP is used for generation of known impurity samples. Progress toward a complete database of acceptor binding energies in InP is reported. We will discuss the results of high magnetic field low temperature resonant photoluminescence spectroscopy for donor identification in InP. The success of donor ion implantation studies will be included. This data should provide direction for efforts in growing high purity InP by MOCVD and gas source MBE.

Photoluminescence characterization of Mg implanted GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
C. Ronning ◽  
H. Hofsäss ◽  
A. Stötzler ◽  
M. Deicher ◽  
E.P. Carlson ◽  
...  
Keyword(s):  
Nitride Layer ◽  
Optically Active ◽  
Electrical Measurements ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Optical Activation ◽  
Nitride Layers ◽  
P Type ◽  
High Degree

AbstractSingle crystalline (0001) gallium nitride layers, capped with a thin epitaxial aluminum nitride layer, were implanted with magnesium and subsequently annealed in vacuum to 1150-1300 oC for 10-60 minutes. Photoluminescence (PL) measurements showed the typical donor acceptor pair (DAP) transition at 3.25 eV after annealing at high temperatures, which is related to optically active Mg acceptors in GaN. After annealing at 1300 °C a high degree of optical activation of the implanted Mg atoms was reached in the case of low implantation doses. Electrical measurements, performed after removing the AlN-cap and the deposition of Pd/Au contacts, showed no p-type behavior of the GaN samples due to the compensation of the Mg acceptors with native n-type defects.

scholarly journals Chemical structure and optical signatures of nitrogen acceptors in MgZnO

2020 ◽  
Vol 8 (19) ◽  
pp. 6435-6441
Author(s):  
M. Zakria ◽  
P. Bove ◽  
D. J. Rogers ◽  
F. H. Teherani ◽  
E. V. Sandana ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Structure ◽  
Acceptor Pair ◽  
Low Temperature Deposition ◽  
Donor Acceptor ◽  
Temperature Deposition ◽  
Donor Acceptor Pair

Nitrogen can be incorporated into MgZnO using low-temperature deposition. Donor–acceptor pair emission from N-doped MgZnO is attributed to molecular N2.

Alloy Dependent Properties of Excitons and Deep Acceptors in CdZnTe Volume Crystals

1992 ◽  
Vol 242 ◽  
Author(s):  
B. K. Meyer ◽  
D. M. Hofmann ◽  
K. Oettinger ◽  
W. Stadler ◽  
Al. L. Efros ◽  
...  
Keyword(s):  
Alloy Composition ◽  
Energy Gap ◽  
Theoretical Calculations ◽  
Anion Vacancy ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Neutral Acceptor ◽  
Low Temperature Photoluminescence ◽  
Excitonic Energy

ABSTRACTCd1-xZnxTe ZriTe crystals grown by the travelling heater methode (THM) have been investigated by low temperature photoluminescence (PL). The excitonic energy gap as a function of the alloy composition was determined for the complete range of x - 0 to x - 1. The composition dependent broadening of the neutral acceptor bound exciton (A°X) line was measured and compared to theoretical calculations. The Donor - Acceptor pair luminescence in the crystals is a superposition of recombinations due to residual Cu acceptors and A - centers (anion vacancy - donor pairs ).

Characterization of Ion Implanted GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
B.J. Skromme ◽  
G.L. Martinez ◽  
L. Krasnobaev ◽  
D.B. Poker
Keyword(s):  
Low Temperature ◽  
Low Dose ◽  
Type Material ◽  
Acceptor Pair ◽  
Low Temperature Photoluminescence ◽  
Ion Implanted

ABSTRACTLow temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptors. The yellow (2.2 eV) PL band is strongly introduced by both C and Be implants, but not by Ar, Al, P, or Mg. We propose that it involves Ga vacancies stabilized by complexing with C and Be interstitial (or CGa) donors, which explains why C and Be are absent as substitutional acceptors. We observe excitons bound to isoelectronic PN in P-implanted GaN. They are absent in P+Mg implanted GaN, in which we observe new donor-to-acceptor pair peaks due to two deeper donor levels. We assign these levels to PGa antisite double donors, which are stable in p-type material

scholarly journals Characterization of donor–acceptor-pair emission in fluorescent 6H-SiC

2012 ◽  
Vol T148 ◽  
pp. 014003 ◽  
Author(s):  
Yiyu Ou ◽  
Valdas Jokubavicius ◽  
Margareta Linnarsson ◽  
Rositza Yakimova ◽  
Mikael Syväjärvi ◽  
...  
Keyword(s):  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Distant Pair Interactions Involving Antisites in GaAs

1985 ◽  
Vol 46 ◽  
Author(s):  
B.C. Cavenett ◽  
M. Deiri
Keyword(s):  
Low Temperature ◽  
Acceptor Pair ◽  
G Factor ◽  
Absorption Energy ◽  
Pair Model ◽  
Triplet Model ◽  
Donor Acceptor ◽  
Distant Pair ◽  
Donor Acceptor Pair ◽  
Pair Interactions

An investigation of the photoquenching behaviour in semi-insulating GaAs at low temperature shows that the ASGa antisite MCD-ODMR is persistently quenched while a broad vacancy-like resonance near g=2, which shows a variation of g-factor with absorption energy, broadens and becomes energy independent. The results are discussed in terms of interacting antisite and vacancy centres in analogy with the distant pair model for donor-acceptor pair recombination and the advantages of the triplet model for the EL2 metastahle state are reviewed.

Structural and Optical Characterization of CuxGaySe2Thin Films under Excitation with Above and Below Band Gap Laser Light

2002 ◽  
Vol 730 ◽  
Author(s):  
C. Xue ◽  
D. Papadimitriou ◽  
Y.S. Raptis ◽  
T. Riedle ◽  
N. Esser ◽  
...  
Keyword(s):  
Band Gap ◽  
Raman Spectra ◽  
Laser Light ◽  
Film Surface ◽  
Shallow Donor ◽  
Acceptor Pair ◽  
Donor And Acceptor ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

AbstractCuxGaySe2MOCVD and PVD grown films were structurally and optically characterized by Raman, Micro-Raman and photoluminescence spectroscopy. Defect related photoluminescence excitation with wavelengths varying across the material band gap reveals: a) in Cu-rich CuGaSe2films, three band edge splitting due to the spin-orbit interaction and the crystal field, and donor-acceptor pair recombination between a shallow donor and two different acceptor levels, and b) in Ga-rich CuGaSe2films, donor-acceptor pair transitions between quasi-continua of donor and acceptor levels related to potential fluctuations. Raman spectra of CuxGaySe2films, excited by laser light near and below the material band gap, show intense modes at 197cm-1, 187cm-1, and 277cm-1, which can be used as indicators of crystallinity and Ga-content of the films. Polarization- and angular- dependent micro-Raman spectra of MOCVD CuGaSe2indicate that CuxSey-crystallites, dispersed on the surface of Cu-rich films, are grown oriented with their c-axis perpendicular to the film surface.

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