Electro-optic Mach-Zehnder modulators with polycrystalline BaTiO3 thin films on MgO

2002 ◽  
Vol 748 ◽  
Author(s):  
A. Petraru ◽  
J. Schubert ◽  
M. Schmid ◽  
O. Trithaveesak ◽  
Ch. Buchal

ABSTRACTThe optical and electro-optical properties of epitaxially grown thin films of ferroelectric BaTiO3 on MgO substrates have been established and high quality Mach-Zehnder waveguide modulators have been demonstrated. As a next step towards the integration of ferroelectric thin films on different substrates, we have modified the growth conditions by lowering the growth temperature to study polycrystalline, but still highly transparent BaTiO3 (BTO) films. Polycrystalline BTO on MgO substrates has been grown by pulsed laser deposition (PLD). The growth temperature was reduced from 800 °C to 400 °C at an oxygen pressure of 2×10-3 mbar. Although polycrystalline, the BTO is still birefringent with no= 2.32 and ne = 2.30. Ridge waveguides have been formed by ion beam etching. The estimated waveguide propagation loss is 4 dB/cm at 633 nm. Electro-optic Mach-Zehnder modulators have been realized. Using 3 mm long electrodes with a spacing of 10 μm, a Vπ voltage of 14 V was obtained at 633 nm wavelength. This is half of the observed effective electro-optic coefficient measured at epitaxial BTO films. At 1.5 μm wavelength similar results were observed.

2001 ◽  
Vol 688 ◽  
Author(s):  
A. Petraru ◽  
M. Siegert ◽  
M. Schmid ◽  
J. Schubert ◽  
Ch. Buchal

AbstractHigh quality BaTiO3 epitaxial thin films on MgO substrates have been grown by pulsed laser deposition (PLD). Both c-axis and a-axis orientated BaTiO3 were studied. Mach-Zehnder (M-Z) optical waveguide modulators have been fabricated by ion beam etching. The BaTiO3 waveguide propagation losses are 1-2 dB/cm. Electro-optic modulation has been demonstrated with Vπ = 6.3 V at a wavelength of 633 nm and Vπ = 9.5 V at a wavelength of 1550 nm for the aaxis samples and with Vπ = 8 V at 633 nm wavelength and Vπ = 15 V at 1550 nm for the c-axis samples. Modelling of the modulators gave the Pockels coefficient r51 = 80 pm/V for the c-axis film and an effective Pockels coefficient reff =734pm/V for the a-axis films at 633nm wavelength.


1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.


1999 ◽  
Vol 17 (3) ◽  
pp. 793-798 ◽  
Author(s):  
F. Frost ◽  
G. Lippold ◽  
K. Otte ◽  
D. Hirsch ◽  
A. Schindler ◽  
...  

1995 ◽  
Vol 8 (8) ◽  
pp. 676-679 ◽  
Author(s):  
A Matthes ◽  
F Schmidl ◽  
K -U Barholz ◽  
F Elschner ◽  
H Schneidewind ◽  
...  

2002 ◽  
Vol 16 (06n07) ◽  
pp. 993-997 ◽  
Author(s):  
W. LI ◽  
T. FENG ◽  
D. S. MAO ◽  
X. WANG ◽  
X. H. LIU ◽  
...  

In our study, diamond-like-carbon (DLC) thin films were prepared by filtered arc deposition (FAD), which provided a way to deposit DLC thin films on large areas at room temperature. Glass slides coated 100nm chromium or titanium thin films were used as cathode substrates. Millions of rectangular holes with sizes of 5 × 5μm were made on the DLC films using a routine patterning process. Here a special reactive ion beam etching method was applied to etch the DLC films. The anodes of the devices were made by electrophoretic deposition. ZnO:Zn phosphor (P15) was employed, which has a broad band bluish green (centered at 490nm). Before electrophoretic deposition, the anode substrates (ITO glass slides) had been patterned into 50 anode electrodes. In order to improve the adherence of phosphor layers, the as-deposited screens were treated in Na2SiO3 solution for 24h to add additional binder. A kind of matrix-addressed diode FED prototype was designed and packaged. 50-100μm-thick glass slides were used as spacers and getters were applied to maintain the vacuum after the exhaustion. The applied DC voltage was ranged in 0-3000V and much higher current density was measured in the cathode-patterned prototypes than the unpatterned ones during the test. As a result, characters could be well displayed.


2002 ◽  
Vol 50 (1) ◽  
pp. 231-240 ◽  
Author(s):  
B. Gautier ◽  
C. Soyer ◽  
E. Cattan ◽  
D. Remiens ◽  
J.-Ci. Labrune

2013 ◽  
Vol 24 (7) ◽  
pp. 2541-2547 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Saurabh Kumar Pandey ◽  
C. Mukherjee ◽  
P. Mishra ◽  
M. Gupta ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document