Ion beam etching technique in the preparation of samples for cross-sectional microscopy studies of thin films and hard coatings

1994 ◽  
Vol 67 (1-2) ◽  
pp. 95-104 ◽  
Author(s):  
K.A. Pischow ◽  
A.S. Korhonen ◽  
M. Adamik ◽  
P.B. Barna
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Hard Coatings ◽  
Etching Technique ◽  
Cross Sectional ◽  
Ion Beam Etching

scholarly journals High-quality Au/BIG/GGG magnetoplasmonic crystals fabricated by a combined ion-beam etching technique

2015 ◽  
Vol 5 (7) ◽  
pp. 1647 ◽  
Author(s):  
A. L. Chekhov ◽  
V. L. Krutyanskiy ◽  
V. A. Ketsko ◽  
A. I. Stognij ◽  
T. V. Murzina
Keyword(s):  
Ion Beam ◽  
High Quality ◽  
Etching Technique ◽  
Ion Beam Etching

Surface Morphological Changes of Polyimide with Oxygen Reactive Ion Beam Etching (RIBE)

1988 ◽  
Vol 129 ◽  
Author(s):  
Kyung W. Paik ◽  
Arthur L. Ruoff
Keyword(s):  
Morphological Changes ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Ion Beam Etching ◽  
X Ray ◽  
Disordered Phase ◽  
Beam Incidence ◽  
Yield Difference ◽  
Sectional Plane

ABSTRACTAt the beginning of etching, surface asperities appeared on the top plane of the polyimide (PI) film. The formation of surface asperities is due to the ordered phase in PI film. The known dimension of the ordered phase measured by X-ray diffraction is consistant with the size of surface asperities, 100 Å, observed by TEM. Further ion doses made these asperties evolve into smooth bumps which then eroded into cones as a result of etch yield difference as a function of the angle of beam incidence Y(θ)/Y(0) which has a maximum at θ=70. Finally cones led to the development of grass-likestructure on the top plane of the PI film. The formation of platelike structure on the cross-sectional plane of PI indicates that the structural inhomogeniety of the PI film(the ordered and disordered phase) is the main cause for the surface morphological changes of PI.

Smoothing of polycrystalline Cu(In,Ga)(Se,S)2 thin films by low-energy ion-beam etching

1999 ◽  
Vol 17 (3) ◽  
pp. 793-798 ◽  
Author(s):  
F. Frost ◽  
G. Lippold ◽  
K. Otte ◽  
D. Hirsch ◽  
A. Schindler ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Etching

Electrical end-point detection during ion beam etching of thin films and multilayers

1995 ◽  
Vol 8 (8) ◽  
pp. 676-679 ◽  
Author(s):  
A Matthes ◽  
F Schmidl ◽  
K -U Barholz ◽  
F Elschner ◽  
H Schneidewind ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
End Point ◽  
End Point Detection ◽  
Point Detection

Irradiation Effect of Nitrogen Ion Beam on Carbon Nitride Thin Films

2003 ◽  
Vol 792 ◽  
Author(s):  
Shinichiro Aizawa ◽  
Yuka Nasu ◽  
Masami Aono ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Irradiation Effect ◽  
Carbon Filament ◽  
Cross Sectional ◽  
Nitrogen Ions ◽  
Nitrogen Ion

ABSTRACTIrradiation effect of low-energy nitrogen ion beam on amorphous carbon nitride (a-CNx) thin films has been investigated. The a-CNx films were prepared on silicon single crystal substrates by hot carbon-filament chemical vapor deposition (HFCVD). After deposition, the CNx films were irradiated by a nitrogen ion beam with energy from 0.1 to 2.0 keV. Irradiation effect on the film microstructure and composition was studied by SEM and XPS, focusing on the effect of nitrogen ion beam energy. Surface and cross sectional observations by SEM reveal that the as-deposited films show a densely distributed columnar structure and the films change to be a sparsely distributed cone-like structure after irradiation. It is also found that 2.0 keV ions skeltonize the films more clearly than 0.1 kev ions. Depth profiles of nitrogen in the films observed by XPS show that nitrogen absorption into films is more prominent after irradiation by 0.1 keV nitrogen ions than 2.0 keV ions.

Electro-optic Mach-Zehnder modulators with polycrystalline BaTiO3 thin films on MgO

2002 ◽  
Vol 748 ◽  
Author(s):  
A. Petraru ◽  
J. Schubert ◽  
M. Schmid ◽  
O. Trithaveesak ◽  
Ch. Buchal
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Ion Beam ◽  
Growth Conditions ◽  
Propagation Loss ◽  
Ion Beam Etching ◽  
Waveguide Propagation ◽  
Electro Optic ◽  
Ridge Waveguides ◽  
Waveguide Modulators

ABSTRACTThe optical and electro-optical properties of epitaxially grown thin films of ferroelectric BaTiO3 on MgO substrates have been established and high quality Mach-Zehnder waveguide modulators have been demonstrated. As a next step towards the integration of ferroelectric thin films on different substrates, we have modified the growth conditions by lowering the growth temperature to study polycrystalline, but still highly transparent BaTiO3 (BTO) films. Polycrystalline BTO on MgO substrates has been grown by pulsed laser deposition (PLD). The growth temperature was reduced from 800 °C to 400 °C at an oxygen pressure of 2×10-3 mbar. Although polycrystalline, the BTO is still birefringent with no= 2.32 and ne = 2.30. Ridge waveguides have been formed by ion beam etching. The estimated waveguide propagation loss is 4 dB/cm at 633 nm. Electro-optic Mach-Zehnder modulators have been realized. Using 3 mm long electrodes with a spacing of 10 μm, a Vπ voltage of 14 V was obtained at 633 nm wavelength. This is half of the observed effective electro-optic coefficient measured at epitaxial BTO films. At 1.5 μm wavelength similar results were observed.

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