Electrical and Optical Properties of Amorphous and Microcrystalline Hydrogenated Silicon Films Deposited Using Saddle Field Glow Discharge

2003 ◽  
Vol 762 ◽  
Author(s):  
I. Milostnaya ◽  
T. Allen ◽  
F. Gaspari ◽  
N.P. Kherani ◽  
D. Yeghikyan ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Raman Spectroscopy ◽  
Optical Properties ◽  
Glow Discharge ◽  
Silicon Films ◽  
Electrical And Optical Properties ◽  
Hydrogenated Silicon ◽  
Sem And Tem ◽  
Vis Spectroscopy ◽  
Dc Saddle Field

AbstractAmorphous (a-Si:H) and microcrystalline (μc-Si:H) hydrogenated silicon films were obtained using DC saddle field glow discharge. The structure of the films was determined by Raman spectroscopy, SEM and TEM. The optoelectronic characteristics of both a-Si:H and μcSi:H were investigated using FTIR, UV/VIS spectroscopy, dark electrical conductivity (σd) and photoconductivity (σph) measurements. Boron and phosphorous doping of a-Si:H and μc-Si:H films was also investigated. The results show that both a-Si:H and μc-Si:H undoped films are highly resistive (σd=10-8-10-10 Ω-1cm-1). The doping efficiency of μc-Si:H films is much higher than a-Si:H films. The Tauc gap for a-Si:H was in the range 1.8-1.9 eV and for μc-Si:H films it was in the range 1.9-2.5 eV. The photoconductivity measurements of undoped films indicate a higher photosensitivity of a-Si:H films (σph/σd=104)than that of μc-Si:H films (σph/σd=10-100).

Electrical and Optical Properties of Oxygenated Microcrystalline Silicon (mc-Si:O:H)

1992 ◽  
Vol 242 ◽  
Author(s):  
M. Faraji ◽  
Sunil Gokhale ◽  
S. M. Chaudhari ◽  
M. G. Takwale ◽  
S. V. Ghaisas
Keyword(s):  
Optical Properties ◽  
Glow Discharge ◽  
Silicon Surface ◽  
Volume Fraction ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Electrical And Optical Properties ◽  
Radio Frequency Glow Discharge ◽  
Absorption Studies ◽  
Discharge Method

ABSTRACTHydrogenated microcrystalline silicon with oxygen(mc-Si:O:H) is grown using radio frequency glow discharge method. Oxygen is introduced during growth by varying it's partial pressure in the growth chamber. The crystalline volume fraction ‘f’ and the crystallite size ‘δ’ are found to vary with the oxygen content. Results indicate that oxygen can etch the silicon surface when present in low amount while it forms a-SiO2-x with increasing contents. Optical absorption studies in the range of 2 to 3 eV suggest that the absorption coefficient ‘α’ lies in between the values of c-Si and a-Si:H.being closer to a-Si:H. The Hall mobility measurements for these samples indicate that for optimum oxygen contents the mobility as high as 35 cm2 V-1 sec-1 can be obtained. Results on I-V characteristics for p-i-n structure are presented.

Electrical and Optical Properties of Amorphous Si1-xSnx: H Structures

1986 ◽  
Vol 77 ◽  
Author(s):  
D. Girginoudi ◽  
A. Thanailakis ◽  
A. Christou
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
Entire Range ◽  
Conductivity Measurements ◽  
Electrical And Optical Properties ◽  
Hydrogenated Silicon ◽  
Tin Films ◽  
Amorphous Hydrogenated Silicon ◽  
Conductivity Increase ◽  
Band Edge Luminescence

ABSTRACTAmorphous hydrogenated silicon-tin films (α — Six Snx:H) have been prepared by co-electron beam and Knudsen cell deposition. It is shown that the dependence of Eg on x, over the entire range of 0 < x < 0.51 studied, cannot be described by a single linear relationship. The d.c. conductivity measurements indicate two distinct conduction regions as a function of x. The addition of Sn up to x = 0.10 creates a high density of dangling bonds and moves the band edges so a significant conductivity increase is observed. The bonding between Si and H is preferred to Sn and H. Sn-H bonds were observed only for x > 0.40. Photoluminescence measurements show that band edge luminescence dominates at 1.3–1.4 eV.

Enhanced Electrical Properties of AZO/IZO Multilayered Thin Film with Post Laser Annealing Process

2021 ◽  
Vol 21 (3) ◽  
pp. 1971-1977
Author(s):  
Jihye Kang ◽  
Dongsu Park ◽  
Donghun Lee ◽  
Masao Kamiko ◽  
Sung-Jin Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Multilayer Structure ◽  
Laser Annealing ◽  
Transparent Conducting Oxide ◽  
Sol Gel ◽  
Electrical And Optical Properties ◽  
Vis Spectroscopy ◽  
Doped Zno

In this research, alternative deposition process of ZnO-based thin films have been studied for transparent conducting oxide (TCO) application. To improve the electrical and optical properties of transparent oxide thin films, alternatively stacked Al-doped ZnO and In-doped ZnO thin films were investigated. Multilayer structure of alternative 6 layers of thin films were prepared in this research. Especially, Aluminum and Indium were chosen as dopant materials. Thin films of Al-doped ZnO (AZO) and In-doped ZnO (IZO) were alternatively deposited by spin coating with sol-gel method. After deposition of multilayered thin films, multi steps of furnace (F), rapid thermal annealing (R) and CO2 laser annealing (L) processes were carried out and investigated thin film properties by dependence of post-annealing sequence and thin film structures. The electrical and optical properties of thin films were investigated by 4-point probe and UV-vis spectroscopy and its shows the greatest sheet resistance value of 0.59 kΩ/sq. from AZO/IZO multilayered structure and upper 85% of transmittance. The structural property and surface morphology were measured by X-Ray Diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The Al- and In-doped ZnO thin film shows the highest intensity value at (002) peak of AZO/IZO multilayer structure which was performed FRL process.

Structural, Electrical and Optical Properties of Laser Deposited Thin Films of Srco0.8Fe0.2O3-δ

1994 ◽  
Vol 369 ◽  
Author(s):  
C. Zhang ◽  
H. Deng ◽  
J. Varon ◽  
B. Abeles ◽  
Y. Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Conductivity ◽  
Optical Properties ◽  
Optical Absorption ◽  
Laser Deposition ◽  
Electrical And Optical Properties ◽  
Thermally Activated ◽  
Characteristic Features

AbstractThin film SrCo0.8Fe0.2O3-δ were made by pulse laser deposition. The electrical conductivity is thermally activated in the temperature 25-500 °C with an activation energy of 0.17-0.19 eV and is temperature independant from 500-800 °C. The optical absorption shows characteristic features which are interpreted qualitatively in terms of a simple band structure diagram.

scholarly journals Nanostructure of thin silicon films by combining HRTEM, XRD and Raman spectroscopy measurements and the implication to the optical properties

2008 ◽  
Vol 254 (9) ◽  
pp. 2748-2754 ◽  
Author(s):  
Andreja Gajović ◽  
Davor Gracin ◽  
Igor Djerdj ◽  
Nenad Tomašić ◽  
Krunoslav Juraić ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Optical Properties ◽  
Silicon Films ◽  
Thin Silicon
Sign in / Sign up

Export Citation Format

Share Document