The microstructure and optical properties of crystallized hydrogenated silicon films prepared by very high frequency glow discharge

2011 ◽  
Vol 257 (20) ◽  
pp. 8350-8354 ◽  
Author(s):  
Desheng Wang ◽  
Zhibo Yang ◽  
Fei Li ◽  
Deyan He
Keyword(s):  
Optical Properties ◽  
Glow Discharge ◽  
High Frequency ◽  
Silicon Films ◽  
Very High Frequency ◽  
Hydrogenated Silicon ◽  
Very High

Nanocrystalline Silicon Films Grown at High Pressure in Very High Frequency Plasma Enhanced Chemical Vapor Deposition System

2010 ◽  
Vol 663-665 ◽  
pp. 1171-1174 ◽  
Author(s):  
Yan Qing Guo ◽  
Rui Huang ◽  
Jie Song ◽  
Xiang Wang ◽  
Yi Xiong Zhang
Keyword(s):  
High Pressure ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Very High Frequency ◽  
Hydrogen Dilution ◽  
Very High ◽  
Nanocrystalline Silicon Films

Nanocrystalline silicon films have been fabricated from SiH4 diluted with H2 in very high frequency (40.68 MHz) plasma enhanced chemical vapor deposition system at low temperatures (250oC). The influence of pressure on the structural properties of nanocrystalline silicon films has been investigated. The experimental results reveal that a very high hydrogen dilution is needed to crystallize the film grown at high pressure. If the hydrogen dilution is not high enough, the film could also be crystallized through lowering the pressure. Furthermore, the crystallinity and grain size increase with decreasing the pressure. These results could be attributed to the increase of ion bombardment energy and the higher atomic hydrogen flux toward the growing film surface at lower pressures.

Electrical and Optical Properties of Amorphous and Microcrystalline Hydrogenated Silicon Films Deposited Using Saddle Field Glow Discharge

2003 ◽  
Vol 762 ◽  
Author(s):  
I. Milostnaya ◽  
T. Allen ◽  
F. Gaspari ◽  
N.P. Kherani ◽  
D. Yeghikyan ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Raman Spectroscopy ◽  
Optical Properties ◽  
Glow Discharge ◽  
Silicon Films ◽  
Electrical And Optical Properties ◽  
Hydrogenated Silicon ◽  
Sem And Tem ◽  
Vis Spectroscopy ◽  
Dc Saddle Field

AbstractAmorphous (a-Si:H) and microcrystalline (μc-Si:H) hydrogenated silicon films were obtained using DC saddle field glow discharge. The structure of the films was determined by Raman spectroscopy, SEM and TEM. The optoelectronic characteristics of both a-Si:H and μcSi:H were investigated using FTIR, UV/VIS spectroscopy, dark electrical conductivity (σd) and photoconductivity (σph) measurements. Boron and phosphorous doping of a-Si:H and μc-Si:H films was also investigated. The results show that both a-Si:H and μc-Si:H undoped films are highly resistive (σd=10-8-10-10 Ω-1cm-1). The doping efficiency of μc-Si:H films is much higher than a-Si:H films. The Tauc gap for a-Si:H was in the range 1.8-1.9 eV and for μc-Si:H films it was in the range 1.9-2.5 eV. The photoconductivity measurements of undoped films indicate a higher photosensitivity of a-Si:H films (σph/σd=104)than that of μc-Si:H films (σph/σd=10-100).

Effect of ion bombardment in very-high frequency glow discharge on growth and properties of SiHx films

1997 ◽  
Vol 15 (2) ◽  
pp. 298-306 ◽  
Author(s):  
A. I. Kosarev ◽  
A. S. Smirnov ◽  
A. S. Abramov ◽  
A. J. Vinogradov ◽  
A. Yu. Ustavschikov ◽  
...  
Keyword(s):  
Glow Discharge ◽  
High Frequency ◽  
Ion Bombardment ◽  
Very High Frequency ◽  
Very High

High Rate Deposition of Amorphous Silicon Based Solar Cells using Modified Very High Frequency Glow Discharge

2007 ◽  
Vol 989 ◽  
Author(s):  
Guozhen Yue ◽  
Baojie Yan ◽  
Jeffrey Yang ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Cell Performance ◽  
High Rate ◽  
Active Area ◽  
Very High Frequency ◽  
Single Junction ◽  
Very High

AbstractWe report our recent progress on high rate deposition of hydrogenated amorphous silicon (a-Si:H) and silicon germanium (a-SiGe:H) based n-i-p solar cells. The intrinsic a-Si:H and a-SiGe:H layers were deposited using modified very high frequency (MVHF) glow discharge. We found that both the initial cell performance and stability of the MVHF a-Si:H single-junction cells are independent of the deposition rate up to 15 Å/s. The average initial and stable active-area cell efficiencies of 10.0% and 8.5%, respectively, were obtained for the cells on textured Ag/ZnO coated stainless steel substrates. a-SiGe:H single-junction cells were also optimized at a rate of ~10 Å/s. The cell performance is similar to those made using conventional radio frequency technique at 3 Å/s. By combining the optimized component cells made at 10 Å/s, an a-Si:H/a-SiGe:H double-junction solar cell with an initial active-area efficiency of 11.7% was achieved.

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