Structural, Electrical and Optical Properties of Laser Deposited Thin Films of Srco0.8Fe0.2O3-δ

1994 ◽  
Vol 369 ◽  
Author(s):  
C. Zhang ◽  
H. Deng ◽  
J. Varon ◽  
B. Abeles ◽  
Y. Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Conductivity ◽  
Optical Properties ◽  
Optical Absorption ◽  
Laser Deposition ◽  
Electrical And Optical Properties ◽  
Thermally Activated ◽  
Characteristic Features

AbstractThin film SrCo0.8Fe0.2O3-δ were made by pulse laser deposition. The electrical conductivity is thermally activated in the temperature 25-500 °C with an activation energy of 0.17-0.19 eV and is temperature independant from 500-800 °C. The optical absorption shows characteristic features which are interpreted qualitatively in terms of a simple band structure diagram.

Structural and optical properties of Zn1−xCoxO and ZnCo2O4 thin films

2005 ◽  
Vol 891 ◽  
Author(s):  
Kousik Samanta ◽  
Pijush Bhattacharya ◽  
Ram S. Katiyar ◽  
W. Iwamoto ◽  
R. R. Urbano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Optical Absorption ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structural And Optical Properties ◽  
Ceramic Targets ◽  
Co Concentrations

ABSTRACTThin films of Co substituted ZnO and ZnCo2O4 were deposited on c-axis (0001) oriented Al2O3 substrates using pulsed laser deposition. The XRD results showed all the films were highly (002) oriented with a less intense peak of (311) for ZnCo2O4 thin film. Micro-Raman spectra of ceramic targets showed the modes related to wurtzite ZnO and spinel ZnCo2O4 structures. In thin films of Zn1−xCoxO no modes corresponding to ZnCo2O4 were detected. The intensity of E1(LO) and multiphonon peak at 584 and 540 cm−1 respectively, increased with increase in Co substitution. The optical absorption of the films showed that the band gap decreased with increase of Co concentrations at room temperature along with the sub-bandgap absorptions due to d-d transitions of Co2+. Similar sub-bandgap d-d transition was also observed in the absorption spectra ZnCo2O4 thin films. The highest saturated magnetization (0.2μB/Co) was obtained for 5%Co substituted ZnO.

The Optical Properties of Thin Films Tin Oxide with Triple Doping (Aluminum, Indium, and Fluorine) for Electronic Device

2021 ◽  
Vol 317 ◽  
pp. 477-482
Author(s):  
Aris Doyan ◽  
Susilawati ◽  
Muhammad Taufik ◽  
Syamsul Hakim ◽  
Lalu Muliyadi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Optical Properties ◽  
Tin Oxide ◽  
Electronic Device ◽  
Film Material ◽  
Mass Percentage ◽  
Gap Energy ◽  
As Doping

Tin oxide (SnO2) thin film is a form of modification of semiconductor material in nanosize. The thin film study aims to analyze the effect of triple doping (Aluminum, Indium, and Fluorine) on the optical properties of SnO2: (Al + In + F) thin films. Aluminum, Indium, and Fluorine as doping SnO2 with a mass percentage of 0, 5, 10, 15, 20, and 25% of the total thin-film material. The addition of Al, In, and F doping causes the thin film to change optical properties, namely the transmittance and absorbance values ​​changing. The transmittance value is 67.50, 73.00, 82.30, 87.30, 94.6, and 99.80 which is at a wavelength of 350 nm for the lowest to the highest doping percentage, respectively. The absorbance value increased with increasing doping percentage at 300 nm wavelength of 0.52, 0.76, 0.97, 1.05, 1.23, and 1.29 for 0, 5, 10, 15, 20, and 25% doping percentages, respectively. The absorbance value is then used to find the gap energy of the SnO2: (Al + In + F) thin film of the lowest doping percentage to the highest level i.e. 3.60, 3.55, 3.51, 3.47, 3.42, and 3.41 eV. Thin-film activation energy also decreased with values of 2.27, 2.04, 1.85, 1.78, 1.72, and 1.51 eV, respectively for an increasing percentage of doping. The thin-film SnO2: (Al + In + F) which experiences a gap energy reduction and activation energy makes the thin film more conductive because electron mobility from the valence band to the conduction band requires less energy and faster electron movement as a result of the addition of doping.

ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY R.F. MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Electrical And Optical Properties ◽  
Axis Orientation ◽  
Sputtering Power

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .

Enhanced Electrical Properties of AZO/IZO Multilayered Thin Film with Post Laser Annealing Process

2021 ◽  
Vol 21 (3) ◽  
pp. 1971-1977
Author(s):  
Jihye Kang ◽  
Dongsu Park ◽  
Donghun Lee ◽  
Masao Kamiko ◽  
Sung-Jin Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Multilayer Structure ◽  
Laser Annealing ◽  
Transparent Conducting Oxide ◽  
Sol Gel ◽  
Electrical And Optical Properties ◽  
Vis Spectroscopy ◽  
Doped Zno

In this research, alternative deposition process of ZnO-based thin films have been studied for transparent conducting oxide (TCO) application. To improve the electrical and optical properties of transparent oxide thin films, alternatively stacked Al-doped ZnO and In-doped ZnO thin films were investigated. Multilayer structure of alternative 6 layers of thin films were prepared in this research. Especially, Aluminum and Indium were chosen as dopant materials. Thin films of Al-doped ZnO (AZO) and In-doped ZnO (IZO) were alternatively deposited by spin coating with sol-gel method. After deposition of multilayered thin films, multi steps of furnace (F), rapid thermal annealing (R) and CO2 laser annealing (L) processes were carried out and investigated thin film properties by dependence of post-annealing sequence and thin film structures. The electrical and optical properties of thin films were investigated by 4-point probe and UV-vis spectroscopy and its shows the greatest sheet resistance value of 0.59 kΩ/sq. from AZO/IZO multilayered structure and upper 85% of transmittance. The structural property and surface morphology were measured by X-Ray Diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The Al- and In-doped ZnO thin film shows the highest intensity value at (002) peak of AZO/IZO multilayer structure which was performed FRL process.

Influence of the conditions of pulsed laser deposition on the structural, electrical, and optical properties of VO2 thin films

2015 ◽  
Vol 49 (5) ◽  
pp. 563-569 ◽  
Author(s):  
O. A. Novodvorsky ◽  
L. S. Parshina ◽  
O. D. Khramova ◽  
V. A. Mikhalevsky ◽  
K. D. Shcherbachev ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electrical And Optical Properties ◽  
Vo2 Thin Films
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