Electron Microscopy Study of Submicron Size Antiferromagnetic KMnF3 Nanoparticles and Their Self-assembly

2003 ◽  
Vol 775 ◽  
Author(s):  
Jeffrey Anderson ◽  
Rubi Garcia ◽  
Weilie L. Zhou

AbstractSubmicron KMnF3 cubic and spherical nanoparticles were synthesized using the reverse micelle method. The nanostructures of the nanocrystals were studied by field emission electron microscopy and transmission electron microscopy. KMnF3 nanocrystals synthesized at room temperature started with cubic submicron particles (∼100 nm) and consisted of KMnF3 nanocrystallites (10-15 nm). As the reaction continued, the nanocrystals fused together and transformed into perfect cubic nanocrystals. Spherical beads composed of KMnF3 nanocrystallites were observed at low temperature synthesis. As the reaction continued, the spherical particles grew larger, however, no characteristic cubic shape of KMnF3 nanoparticles were observed. Even as they grew larger, there was no evidence of homogeneous crystal morphology as seen in the room temperature samples. Cubic shape KMnF3 nanocrystals were self-assembled into large area self-assembling patterns.

1988 ◽  
Vol 133 ◽  
Author(s):  
L. M. Hsiung ◽  
N. S. Stoloff

ABSTRACTTransmission electron microscopy of single-slip oriented Ni3Al single crystals cyclically deformed at room temperature revealed a high density of dislocation dipoles and point defect clusters. The majority of the defect clusters were identified by weak-beam TEM to be of vacancy type. The observations of circular perfect dislocation loops, Frank loops, and spherical voids revealed the evidence of vacancy condensation during fatigue cycling at room temperature. Together with SEM observations of surface topography, it is suggested that fatigue crack initiation in Ni3Al single crystals can be rationalized by formation of microvoids at PSB/matrix interfaces.


2011 ◽  
Vol 194 (2-4) ◽  
pp. 166-170 ◽  
Author(s):  
Ping-An Fang ◽  
Henry C. Margolis ◽  
James F. Conway ◽  
James P. Simmer ◽  
Gary H. Dickinson ◽  
...  

2002 ◽  
Vol 17 (2) ◽  
pp. 479-486 ◽  
Author(s):  
T. Gorelik ◽  
U. Kaiser ◽  
Ch. Schubert ◽  
W. Wesch ◽  
U. Glatzel

Hexagonal 6H– and 4H–SiC wafers were implanted with (1−1.5) × 1016 cm−2 germanium ions at room temperature and at 700 °C with subsequent annealing between 1000 and 1600 °C. Structural changes in the SiC matrix were studied in detail by means of transmission electron microscopy (TEM). After implantation at room temperature the hexagonal SiC matrix becomes amorphous and, after annealing, recrystallizes into cubic SiC. The latter process was accompanied by the creation of voids and cracks. In case of high-temperature (700 °C) implantation, where amorphization was avoided, no polytype change in as-implanted and annealed SiC wafers was observed. In annealed samples nanocrystalline precipitates with high Ge content were observed in high-resolution TEM images.


2018 ◽  
Vol 534 (1) ◽  
pp. 73-80 ◽  
Author(s):  
A. G. Castellanos-Guzmán ◽  
O. Jiménez ◽  
C. Miramontes-Corona ◽  
D. Mendoza-Anaya ◽  
O. R. Camacho ◽  
...  

2002 ◽  
Vol 728 ◽  
Author(s):  
Chunhai Ji ◽  
Elena A. Guliants ◽  
Don Abeysinghe ◽  
Wayne A. Anderson

AbstractTwo-dimensional arrays of self-organized Si nanowires were synthesized using the metal induced growth (MIG) method. In MIG processing, the thermally evaporated 25∼100 nm thick Ni films serve as prelayers for magnetron sputtered Si. When sputtering at 550°C, the Si crystallization occurs via the formation of nickel disilicide followed by subsequent epitaxial growth of Si crystals on nickel disilicide due to an extremely small lattice mismatch. Scanning electron microscopy study showed that the nanowires originated from the Si thin film and grew upwards in bundles. The diameter of the nanowires was 20∼50 nm. The length of the nanowires was typically 1 νm. Transmission electron microscopy and electron diffraction analysis revealed the single crystal structure of nanowires. Quantum-size effects in the produced wires were investigated by measuring the photoluminescence spectra at both low and room temperature. An intense room temperature PL peak centered around 690 nm with FWHM of 180 nm showed the promise of MIG-Si nanowires for red light-emitting diode applications. In addition, self-aligned silicide film on the bottom provides an ultimate back Ohmic contact, which significantly simplifies the fabrication of optoelectronic devices.


1988 ◽  
Vol 121 ◽  
Author(s):  
Jeffrey Adams ◽  
Thomas Baird ◽  
Paul S. Braterman ◽  
James A. Cairns ◽  
David L. Segal

ABSTRACTThe hydrolysis of tetraethoxysilane was studied in an ethanol-water system with ammonium hydroxide catalyst. Reactions were carried out with water concentrations of 5M and 10M and ammonia concentrations up to 1.7M, and the products examined by electron optical methods. Variation of reagent concentrations lead to changes in the product morphology from small irregular particles, through roughly spherical and spherical particles to large fused particles. Within the range of particulate material the variations in size can be related to the effect of reagent concentrations by consideration of the reactions occurring. The effect on morphology of replacing ammonia with ethylamine was investigated and resembles that of the use of much higher ammonia concentrations.


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