Microwave Measurements of Ferroelectric Thin Films: Techniques, Error and Limitations

2003 ◽  
Vol 784 ◽  
Author(s):  
Peter Kr. Petrov
Keyword(s):  
Thin Films ◽  
Sensitivity Analysis ◽  
Dielectric Loss ◽  
Measurement Data ◽  
Ferroelectric Thin Films ◽  
Microwave Properties ◽  
Microwave Measurements ◽  
Ferroelectric Films

ABSTRACTThis paper examines the problem of evaluating the microwave properties of thin ferroelectric films patterned as planar capacitors. Two types of microwave measurements of ferroelectric thin films are considered: reflection and resonance type measurements. Algorithms are presented for evaluation of capacitance-permittivity and dielectric loss. Using sensitivity analysis, the error and limitations associated with these measurements are estimated. The end result is a series of formulae that use the network analyser's measurement data to calculate the capacitance-permittivity, the dielectric loss, and the associated error.

Preparation of Bi2SiO5-SrBi2Ta2O9 Ferroelectric Thin Films by RF Magnetron Sputtering

2002 ◽  
Vol 748 ◽  
Author(s):  
Shin Kikuchi ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Remnant Polarization ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Ferroelectric Films ◽  
Typical Composition

ABSTRACTSi-added SrBi2Ta2O9 (SBT) ferroelectric films were prepared by RF magnetron sputtering on a Pt/Ti/SiO2/Si (100) structure. The films were deposited at temperatures below 100°C for preventing Bi evaporation and crystallized at 800°C in air. A typical composition was Sr0.79Bi2.37Ta2.00Si0.2Ox. The remnant polarization value(2Pr) of the Si-added SBT film was 16C/cm2 and leakage current density was 5×10-8A/cm2. The current density was significantly decreased by adding Si atoms.

Effective Direct Piezoelectric Constants in Epitaxial Ferroelectric Films as MEMS Sensors

2005 ◽  
Vol 881 ◽  
Author(s):  
Jun Ouyang ◽  
R. Ramesh ◽  
A. L. Roytburd
Keyword(s):  
Thin Films ◽  
Orientation Dependence ◽  
Ferroelectric Thin Films ◽  
Piezoelectric Constant ◽  
Mems Sensors ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Mems Sensor ◽  
Sensor Devices ◽  
Piezoelectric Constants

AbstractFollowing our previous work on the converse piezoelectric constant- in epitaxial ferroelectric films for MEMS actuator applications, the orientation dependence of the direct piezoelectric constants , and are generally formulated, which can help to predict and optimize the performance of piezoelectric MEMS sensor devices based on ferroelectric thin films. Numerical results are obtained and discussed for Pb(ZrxTi1-x)O3 thin films grow on Si substrates with various compositions and structures.

MICROWAVE PROPERTIES OF TUNABLE PHASE SHIFTER USING SUPERCONDUCTOR/FERROELECTRIC THIN FILMS

2005 ◽  
Vol 77 (1) ◽  
pp. 79-85 ◽  
Author(s):  
MIN HWAN KWAK ◽  
YOUNG TAE KIM ◽  
SEUNG EON MOON ◽  
HAN-CHEOL RYU ◽  
SU-JAE LEE ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Shifter ◽  
Ferroelectric Thin Films ◽  
Microwave Properties

Ion Modification for Improvement of Electrical Properties of Perovskite-based Ferroelectric Thin Films Fabricated by Chemical Solution Deposition Method

2005 ◽  
Vol 902 ◽  
Author(s):  
Hiroshi Uchida ◽  
Shintaro Yasui ◽  
Risako Ueno ◽  
Hiroshi Nakaki ◽  
Ken Nishida ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Electrical Properties ◽  
Chemical Solution Deposition ◽  
Perovskite Oxides ◽  
Ferroelectric Thin Films ◽  
Chemical Solution ◽  
Ferroelectric Films ◽  
Solution Deposition ◽  
Crystal Anisotropy

AbstractIon modification for various perovskite-based ferroelectric thin films using rare-earth cations was attempted for improving the electrical properties. Strategy for controlling the electrical properties is mainly based on two concepts, that is, (i) substituting the volatile cations such as Pb2+ and Bi3+, and (ii) controlling the crystal anisotropy of perovskite unit cell. In this study, the influences of ion-modification conditions (i.e., amount, species and occupying site of substituent cations) on the electrical properties of perovskite-based ferroelectric films fabricated by a chemical solution deposition were investigated. Substituting volatile cations in simple-perovskite oxides, such Pb2+ in Pb(Zr,Ti)O3 and Bi3+ in BiFeO3, for the rare-earth cations like La3+ and Nd3+ reduced the leakage current density of these films due to suppressing the metal and / or oxygen vacancies, as well as in layered-perovskite oxides, such as Bi4Ti3O12 films [i.e., strategy (i)]. Also, crystal anisotropy of perovskite-based oxides could controlled by varying the species and the occupying site of substituent cations [i.e., strategy (ii)]; for example, the crystal anisotropy of Pb(Zr,Ti)O3 lattice was elongated by Ti- and Zr-site (B-site) substitution using rare-earth cations whose ionic radii locate on the smaller part of rare-earth series (such as Y3+, Dy3+), that resulted in enhancing the spontaneous polarization. We concluded that the strategy for controlling the electrical property mentioned in this study would be applicable for a various kind of perovskite-based ferroelectric films.

Citrate complexing sol–gel process of lead-free (K,Na)NbO3 ferroelectric films

2016 ◽  
Vol 30 (13) ◽  
pp. 1650157 ◽  
Author(s):  
Linlin Yao ◽  
Kongjun Zhu
Keyword(s):  
Thin Films ◽  
Citric Acid ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Raw Material ◽  
Lead Free ◽  
Ferroelectric Films ◽  
Sol Gel Process ◽  
Porous Morphology ◽  
Loop Measurement

The citrate complexing sol–gel process to fabricate lead-free (K,[Formula: see text]Na)NbO3 ferroelectric thin films was studied. Soluble niobium source of niobium–citric acid (Nb–CA) solution was utilized as a raw material to synthesize (K,[Formula: see text]Na)NbO3 thin films, by pyrolyzing at 450–550[Formula: see text]C and annealing at 650[Formula: see text]C. The film pyrolyzed at 450[Formula: see text]C shows poor crystallization with porous morphology, whereas the film pyrolyzed at 550[Formula: see text]C appear to be well-crystallized and denser, and the ferroelectricity was also proved by the [Formula: see text]–[Formula: see text] hysteresis loop measurement.

Highly stable performance of flexible Hf0.6Zr0.4O2 ferroelectric thin films under multi-service conditions

2020 ◽  
Vol 8 (11) ◽  
pp. 3878-3886 ◽  
Author(s):  
Wen-Yan Liu ◽  
Jia-Jia Liao ◽  
Jie Jiang ◽  
Yi-Chun Zhou ◽  
Qiang Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Ferroelectric Films ◽  
Stable Performance ◽  
Service Conditions ◽  
Fatigue Endurance ◽  
Harsh Conditions

Flexible HZO ferroelectric films with superior ferroelectricity, retention and fatigue endurance under multiple harsh conditions.

scholarly journals Nonlinear Microwave Properties of Ferroelectric Thin Films

2004 ◽  
Vol 13 (1-3) ◽  
pp. 223-227 ◽  
Author(s):  
R. W�rdenweber ◽  
R. Ott ◽  
P. Lahl
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Microwave Properties

Photovoltaic Effect in Thin Ferroelectric Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Philip S. Brody ◽  
B. J. Rod ◽  
L. P. Cook ◽  
P. K. Schenck
Keyword(s):  
Thin Films ◽  
Photovoltaic Effect ◽  
Ferroelectric Thin Films ◽  
Polarization Field ◽  
Polarization Reversal ◽  
Ferroelectric Films ◽  
Initial Current ◽  
Elapsed Time ◽  
Steady Current

AbstractPolarization-dependent photovoltaic currents are observed in continuously illuminated ferroelectric thin films under conditions of polarization reversal. Following reversal, an initial current rapidly decays to an essentially steady current, which then decays slowly with the current decreasing in proportion to the logarithm of elapsed time. These polarization-dependent currents are attributed to the action of internal fields on photocarriers where the fields result from the incomplete screening of the polarization field.

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