Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys

2003 ◽  
Vol 798 ◽  
Author(s):  
S. X. Li ◽  
J. Wu ◽  
W. Walukiewicz ◽  
W. Shan ◽  
E. E. Haller ◽  
...  
Keyword(s):  
Pressure Dependence ◽  
Pressure Coefficient ◽  
Accurate Method ◽  
Group Iii Nitrides ◽  
Localized States ◽  
Optical Transitions ◽  
Group Iii ◽  
Pressure Coefficients ◽  
Nitride Alloys ◽  
Group Iii Nitride

ABSTRACTThe hydrostatic pressure dependence of the optical transitions in InN, In-rich In1-xGaxN (0 < x < 0.5) and In1-xAlxN (x = 0.25) alloys is studied using diamond anvil cells. The absorption edges and the photoluminescence peaks shift to higher energy with pressure. The pressure coefficient of InN is determined to be 3.0±0.1 meV/kbar. Together with previous experimental results, our data suggest that the pressure coefficients of group-III nitride alloys have only a weak dependence on the alloy composition. Photoluminescence gives much smaller pressure coefficients, which is attributed to emission involving highly localized states. This indicates that photoluminescence might not be an accurate method to study the pressure dependence of the fundamental bandgaps of group III-nitrides.

scholarly journals Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys

2003 ◽  
Vol 83 (24) ◽  
pp. 4963-4965 ◽  
Author(s):  
S. X. Li ◽  
J. Wu ◽  
E. E. Haller ◽  
W. Walukiewicz ◽  
W. Shan ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Pressure Dependence ◽  
Group Iii ◽  
Nitride Alloys ◽  
Group Iii Nitride

Group III-nitride alloys as photovoltaic materials

2004 ◽  
Author(s):  
Joel W. Ager III ◽  
Junqiao Wu ◽  
Kin M. Yu ◽  
R. E. Jones ◽  
S. X. Li ◽  
...  
Keyword(s):  
Group Iii ◽  
Photovoltaic Materials ◽  
Nitride Alloys ◽  
Group Iii Nitride

scholarly journals Preparation of the group III nitride thin films AlN, GaN, InN by direct and reactive pulsed laser ablation

2001 ◽  
Vol 3 (3) ◽  
pp. 111-121 ◽  
Author(s):  
Aldo Mele ◽  
Anna Giardini ◽  
Tonia M. Di Palma ◽  
Chiara Flamini ◽  
Hideo Okabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Group Iii Nitrides ◽  
X Ray Diffraction ◽  
Subsequent Reaction ◽  
X Ray ◽  
Group Iii ◽  
Emission Spectroscopic Analysis ◽  
Group Iii Nitride

The methods of preparation of the group III nitrides AlN, GaN, and InN by laser ablation (i.e. laser sputtering), is here reviewed including studies on their properties. The technique, concerns direct ablation of nitride solid targets by laser to produce a plume which is collected on a substrate. Alternatively nitride deposition is obtained as a result of laser ablation of the metal and subsequent reaction in anNH3atmosphere. Optical multichannel emission spectroscopic analysis, and time of flight (TOF) mass spectrometry have been applied forin situidentification of deposition precursors in the plume moving from the target. Epitaxial AlN, GaN, and InN thin films on various substrates have been grown. X-ray diffraction, scanning electron microscopy, have been used to characterise thin films deposited by these methods.

scholarly journals Phase separation and ordering in group-III nitride alloys

2004 ◽  
Vol 34 (2b) ◽  
pp. 593-597 ◽  
Author(s):  
L. K. Teles ◽  
M. Marques ◽  
L. M. R. Scolfaro ◽  
J. R. Leite ◽  
L. G. Ferreira
Keyword(s):  
Phase Separation ◽  
Group Iii ◽  
Nitride Alloys ◽  
Group Iii Nitride

AlGaN/GaN Based Heterostructures for MEMS and NEMS Applications

2010 ◽  
Vol 159 ◽  
pp. 27-38
Author(s):  
Volker Cimalla ◽  
C. C. Röhlig ◽  
V. Lebedev ◽  
Oliver Ambacher ◽  
Katja Tonisch ◽  
...  
Keyword(s):  
Microelectromechanical Systems ◽  
Longitudinal Vibration ◽  
Wide Band ◽  
Group Iii Nitrides ◽  
Vibration Modes ◽  
Wide Band Gap ◽  
Group Iii ◽  
Wide Band Gap Semiconductors ◽  
Dimensional Electron Gas ◽  
Group Iii Nitride

With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are receiving more attention. The outstanding properties of group III-nitrides offer many more possibilities for the implementation of new functionalities and a variety of technologies are available to realize group III-nitride based MEMS. In this work we demonstrate the application of these techniques for the fabrication of full-nitride MEMS. It includes a novel actuation and sensing principle based on the piezoelectric effect and employing a two-dimensional electron gas confined in AlGaN/GaN heterostructures as integrated back electrode. Furthermore, the actuation of flexural and longitudinal vibration modes in resonator bridges are demonstrated as well as their sensing properties.

Band gaps of InN and group III nitride alloys

2003 ◽  
Vol 34 (1-2) ◽  
pp. 63-75 ◽  
Author(s):  
J. Wu ◽  
W. Walukiewicz
Keyword(s):  
Band Gaps ◽  
Group Iii ◽  
Nitride Alloys ◽  
Group Iii Nitride

scholarly journals Novel approach to simulation of group-III nitrides growth by MOVPE

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
S. Yu. Karpov ◽  
V. G. Prokofyev ◽  
E. V. Yakovlev ◽  
R. A. Talalaev ◽  
Yu. N. Makarov
Keyword(s):  
Growth Process ◽  
Solid Phase ◽  
Molecular Nitrogen ◽  
Horizontal Tube ◽  
Group Iii Nitrides ◽  
Process Conditions ◽  
Group Iii ◽  
Novel Approach ◽  
Kinetic Effects ◽  
Group Iii Nitride

Recent studies revealed specific features of chemical processes occurring on the surface of growing group-III nitrides – extremely low sticking probability of molecular nitrogen, low sticking coefficient and incomplete decomposition of ammonia frequently used as the nitrogen precursor. These features (kinetic by nature) result in the growth process going on under conditions remarkably deviated from the gas-solid heterogeneous equilibrium. In this paper we propose a novel approach to modeling of group-III nitride growth by MOVPE taking into account these features. In the model the sticking/evaporation coefficients of N2 and NH3 extracted from independent experiments are used allowing adequate description of the kinetic effects. The model is applied to analysis of growth of binary (GaN) and ternary (InGaN) compounds in a horizontal tube reactor. The growth rate and the solid phase composition are predicted theoretically and compared with available experimental data. The modeling results reveal lower ammonia decomposition ratio on the surface of the crystal as compared to thermodynamic expectations. The developed model can be used for optimization of growth process conditions.

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