Advances in the Realisation of GaN-Based Microcavities: Towards Strong Coupling at Room Temperature

ABSTRACTIn a recent paper [Phys. Rev. B 68, 153313 (2003)], we reported the first experimental observation of the strong coupling regime in a GaN-based microcavity. The λ/2 GaN optical cavity was grown by molecular beam epitaxy on a Si(111) substrate. The upper mirror is a SiO2/Si3N4 dielectric mirror and the silicon substrate acts as the bottom mirror. With such a relatively simple and low-finesse microcavity, a Rabi splitting of 31 meV was measured at 5K. On the basis of this very encouraging result, approaches to fabricate high-finesse GaN-based cavities exhibiting strong coupling with stable polaritons at room temperature are discussed.

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Strong optomechanical coupling at room temperature by coherent scattering

Nature Communications ◽

10.1038/s41467-020-20419-2 ◽

2021 ◽

Vol 12 (1) ◽

Cited By ~ 1

Author(s):

Andrés de los Ríos Sommer ◽

Nadine Meyer ◽

Romain Quidant

Keyword(s):

Strong Coupling ◽

Coupling Strength ◽

Room Temperature ◽

Quantum Control ◽

Optical Cavity ◽

Coherent Scattering ◽

Strong Coupling Regime ◽

Cavity Decay ◽

Decoherence Rate ◽

Optomechanical Coupling

AbstractQuantum control of a system requires the manipulation of quantum states faster than any decoherence rate. For mesoscopic systems, this has so far only been reached by few cryogenic systems. An important milestone towards quantum control is the so-called strong coupling regime, which in cavity optomechanics corresponds to an optomechanical coupling strength larger than cavity decay rate and mechanical damping. Here, we demonstrate the strong coupling regime at room temperature between a levitated silica particle and a high finesse optical cavity. Normal mode splitting is achieved by employing coherent scattering, instead of directly driving the cavity. The coupling strength achieved here approaches three times the cavity linewidth, crossing deep into the strong coupling regime. Entering the strong coupling regime is an essential step towards quantum control with mesoscopic objects at room temperature.

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Strong Coupling: Polariton Bose Condensation

10.1093/oso/9780198782995.003.0008 ◽

2017 ◽

Author(s):

Alexey V. Kavokin ◽

Jeremy J. Baumberg ◽

Guillaume Malpuech ◽

Fabrice P. Laussy

Keyword(s):

Strong Coupling ◽

Room Temperature ◽

Elevated Temperatures ◽

Dissipative System ◽

Bose Condensation ◽

Einstein Condensation ◽

Strong Coupling Regime ◽

Stimulated Scattering ◽

Exciton Polaritons ◽

Bose Einstein

In this Chapter we address the physics of Bose-Einstein condensation and its implications to a driven-dissipative system such as the polariton laser. We discuss the dynamics of exciton-polaritons non-resonantly pumped within a microcavity in the strong coupling regime. It is shown how the stimulated scattering of exciton-polaritons leads to formation of bosonic condensates that may be stable at elevated temperatures, including room temperature.

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Room-temperature ferromagnetism in (Mn, N)-codoped TiO2 films grown by plasma assisted molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.3006135 ◽

2008 ◽

Vol 104 (9) ◽

pp. 093914 ◽

Cited By ~ 9

Author(s):

X. Y. Li ◽

S. X. Wu ◽

L. M. Xu ◽

Y. J. Liu ◽

X. J. Xing ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Room Temperature ◽

Molecular Beam ◽

Room Temperature Ferromagnetism ◽

Tio2 Films ◽

Codoped Tio2

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Room-Temperature Wafer Bonded Multi-Junction Solar Cell Grown by Solid State Molecular Beam Epitaxy

MRS Advances ◽

10.1557/adv.2016.429 ◽

2016 ◽

Vol 1 (43) ◽

pp. 2907-2916 ◽

Cited By ~ 3

Author(s):

Shulong Lu ◽

Shiro Uchida

Keyword(s):

Solar Cell ◽

Molecular Beam Epitaxy ◽

Wafer Bonding ◽

Room Temperature ◽

Molecular Beam ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Device Structure ◽

Junction Solar Cell

ABSTRACTWe studied the InGaP/GaAs//InGaAsP/InGaAs four-junction solar cells grown by molecular beam epitaxy (MBE), which were fabricated by the novel wafer bonding. In order to reach a higher conversion efficiency at highly concentrated illumination, heat generation should be minimized. We have improved the device structure to reduce the thermal and electrical resistances. Especially, the bond resistance was reduced to be the lowest value of 2.5 × 10-5 Ohm cm2 ever reported for a GaAs/InP wafer bond, which was obtained by the specific combination of p+-GaAs/n-InP bonding and by using room-temperature wafer bonding. Furthermore, in order to increase the short circuit current density (Jsc) of 4-junction solar cell, we have developed the quality of InGaAsP material by increasing the growth temperature from 490 °C to 510 °C, which leads to a current matching. In a result, an efficiency of 42 % at 230 suns of the four-junction solar cell fabricated by room-temperature wafer bonding was achieved.

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ZnSe Nanowire Photodetector Prepared on Oxidized Silicon Substrate by Molecular-Beam Epitaxy

Journal of The Electrochemical Society ◽

10.1149/1.3077580 ◽

2009 ◽

Vol 156 (4) ◽

pp. J73 ◽

Cited By ~ 29

Author(s):

C. H. Hsiao ◽

S. J. Chang ◽

S. B. Wang ◽

S. P. Chang ◽

T. C. Li ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Silicon Substrate ◽

Molecular Beam

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Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)

MRS Proceedings ◽

10.1557/proc-595-f99w11.65 ◽

1999 ◽

Vol 595 ◽

Cited By ~ 1

Author(s):

U. Hömmerich ◽

J. T. Seo ◽

J. D. MacKenzie ◽

C. R. Abernathy ◽

R. Birkhahn ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Excited States ◽

Room Temperature ◽

Molecular Beam ◽

Average Lifetime ◽

Green Luminescence ◽

Si Substrates ◽

Lifetime Analysis ◽

Metalorganic Molecular Beam Epitaxy ◽

Er Doped

AbstractWe report on the luminescence properties of Er doped GaN grown prepared by metalorganic molecular beam epitaxy (MOMBE) and solid-source molecular beam epitaxy (SSMBE) on Si substrates. Both types of samples emitted characteristic 1.54 µm PL resulting from the intra-4f Er3+ transition 4I13/2→4I15/2. Under below-gap excitation the samples exhibited very similar 1.54 µm PL intensities. On the contrary, under above-gap excitation GaN: Er (SSMBE) showed ∼80 times more intense 1.54 µm PL than GaN: Er (MOMBE). In addition, GaN: Er (SSMBE) also emitted intense green luminescence at 537 nm and 558 nm, which was not observed from GaN: Er (MOMBE). The average lifetime of the green PL was determined to be 10.8 µs at 15 K and 5.5 µs at room temperature. A preliminary lifetime analysis suggests that the decrease in lifetime is mainly due to the strong thermalization between the 2H11/2 and 4S3/2 excited states. Nonradiative decay processes are expected to only weakly affect the green luminescence.

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Aluminum nitride doped with transition metal group atoms as a material for spintronics

Izvestiya vysshikh uchebnykh zavedenii. Fizika ◽

10.17223/00213411/63/11/162 ◽

2020 ◽

pp. 162-172

Author(s):

S.S. Khludkov ◽

◽

I.A. Prudaev ◽

L.O. Root ◽

O.P. Tolbanov ◽

...

Keyword(s):

Experimental Data ◽

Magnetic Properties ◽

Molecular Beam Epitaxy ◽

Transition Metal ◽

Aluminum Nitride ◽

Room Temperature ◽

Molecular Beam ◽

Scientific Literature ◽

Material Growth ◽

Metal Group

Aluminum nitride doped with transition metal group atoms as a material for spintronics The overview of scientific literature on electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on literature sources published mainly in the last 10 years. The doping was carried out by different methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and it is a promising material for spintronics.

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Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy

Selected Topics in Group IV and II–VI Semiconductors ◽

10.1016/b978-0-444-82411-0.50012-7 ◽

1996 ◽

pp. 15-20

Author(s):

H. Presting ◽

T. Zinke ◽

O. Brux ◽

M. Gail ◽

G. Abstreiter ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Room Temperature ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Room Temperature Luminescence

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Molecular Beam Epitaxy of Znl-x Cdx Se/ZnSe Heterostructures And Their Optical Properties

MRS Proceedings ◽

10.1557/proc-228-301 ◽

1991 ◽

Vol 228 ◽

Cited By ~ 5

Author(s):

H. Luo ◽

N. Samarth ◽

J. K. Furdyna ◽

H. Jeon ◽

J. Ding ◽

...

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Room Temperature ◽

Molecular Beam ◽

Stimulated Emission ◽

Optically Pumped ◽

Absorption Coefficients ◽

Excitonic Absorption ◽

Lasing Mechanism

ABSTRACTSuperlattices and quantum wells of Znl-xCdxSe/ZnSe, and heterostructures based on ZnSe/CdSe digital alloys have been grown by molecular beam epitaxy (MBE). Their optical properties were studied with particular emphasis on excitonic absorption and photopumped stimulated emission. Excitonic absorption is easily observable up to 400 K, and is characterized by extremely large absorption coefficients (α = 2×105cm−1). Optically pumped lasing action is obtained at room temperature with a typical threshold intensity of 100 kW/cm2. The lasing mechanism in these II-VI quantum wells appears to be quite different from that in the better studied III-V materials: in our case, the onset of stimulated emission occurs before the saturation of the excitonic absorption, and the stimulated emission occurs at an energy lower than that of the excitonic absorption.

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