Ruthenium Sputter Deposition on Organosilicate Glass and on Paralyne: an XPS Study of Interfacial Chemistry, Nucleation and Growth

2004 ◽  
Vol 812 ◽  
Author(s):  
X. Zhao ◽  
N.P. Magtoto ◽  
J. A. Kelber

AbstractThe interactions of sputter-deposited ruthenium with organosilicate glass (OSG) at 300 K have been studied by x-ray photoelectron spectroscopy (XPS) for Ru coverages from ∼ 0.1 monolayer to several monolayers, using in-situ sample transfer between the deposition and analysis chambers. The results indicate Stranski-Krastanov (SK) type growth, with the completion of the first layer of Ru at an average thickness corresponding to 1 monolayer average coverage. Ru(0) is the only electronic state present. XPS core level spectra indicate weak chemical interactions between Ru and the substrate. A less pronounced tendency towards SK growth was observed for Ru deposition on parylene. Deposition of Ru on OSG followed by electroless deposition of Cu resulted in the formation of a shiny copper film that failed the Scotch Tape test. Results indicate failure mainly at the Ru/OSG interface.

1993 ◽  
Vol 304 ◽  
Author(s):  
K. Konstadinidis ◽  
R. L. Opila ◽  
J. A. Taylor ◽  
A. C. Miller

AbstractWe have used X-ray Photoelectron Spectroscopy to study the chemical interactions at the interface formed during in situ deposition of Ti atoms on triazine, polyimide (PMDAODA), and polystyrene surfaces. For deposition on thin triazine films (∼ 100Å) we observe that titanium carbide is the dominant product, while oxides and nitrides are formed as well. Aging in air causes the carbide and nitride to convert to the more thermodynamically stable oxide. Titanium carbide is also the primary species at the Ti/polyimide and Ti/polystyrene interface. In all cases the reaction of Ti atoms with different sites in the polymer is nonselective.


1990 ◽  
Vol 5 (1) ◽  
pp. 218-222 ◽  
Author(s):  
Jeffrey R. Lince

The chemical composition and structure of MoS2 solid lubricant films are intimately related to their friction and wear characteristics. We have conducted an x-ray photoelectron spectroscopy (XPS) study of 1-μm thick radio frequency (rf)-sputter-deposited MoS2 films to determine the chemical state of the films, focusing on the role of oxygen impurities. Concentrations of chemisorbed and bulk species were determined from the Mo 3d, S 2p, and O 1s peak shapes and intensities after annealing the films to temperatures from 425 to 975 K. Films deposited on substrates that were at ∼345 K [ambient temperature (AT) films] and on substrates heated to ∼525 K [high temperature (HT) films] both had ∼10% oxygen within the bulk of the films. The relative areas and shapes of the XPS peaks for the HT films at all annealing temperatures were consistent with the formation of a MoS2−xOx solid solution, where O atoms were probably substituted into S sites in the 2H–MoS2 crystal lattice. In AT films, this phase composition was stable only for annealing temperatures ≥725 K, in agreement with previous studies of the changes in crystal structure of AT films with annealing. The results are discussed in terms of previous studies of the structure and composition of sputter-deposited MoS2 films.


1995 ◽  
Vol 385 ◽  
Author(s):  
K. Konstadinidis ◽  
F. Papadimitrakopoulos ◽  
M. Galvin ◽  
R. Opila

ABSTRACTThe chemical and electronic properties of aluminum/poly(p-phenylenevinylene) (PPV) interfaces were studied in situ using x-ray photoelectron spectroscopy (XPS). It was observed that the aluminum atoms react with the oxygen-containing groups present as impurities on the surface of PPV to form Al-O-C linkages. The Al atoms also interact with the wrsystem of the polymer as indicated by changes in the valence band. Contrary to to recent suggestions (Ettedgui et al.) the relation between surface oxygen content and band bending is not straightforward, as shown by deposition on PPV surfaces prepared by two different synthetic routes.


1991 ◽  
Vol 238 ◽  
Author(s):  
S. M. Mukhopadhyay ◽  
C. S. Chen

ABSTRACTThe interfacial chemistry between Ni and Al2O3 has been studied during the initial stages of bonding. We have evaporated thin films of Ni on different alumina substrates (thin oxide film on metallic Al, polished and scratched sapphire crystals, surface with second phase precipitates) and have analyzed how the interface grows, in situ, using X-ray Photoelectron Spectroscopy. It was found that a certain fraction of the first monolayer of Ni which forms on the alumina surface undergoes charge transfer to form NiO. This is due to oxygen-active sites such as unattached oxygen bonds on the surface. A measure of the concentration of such sites can therefore be obtained from the submonolayer fraction of Ni that gets oxidized. It was found that a rough surface offered less oxidation sites for Ni than a smooth one whereas a surface with second phase MgAI2O4 (spinel) precipitates offered more oxidation sites. Also, there is much less oxidation on a thin film of amorphous alumina grown on metallic Al than on a polished bulk sapphire surface. The implications of these studies to further understanding of the metal-ceramic interface have been discussed.


1988 ◽  
Vol 119 ◽  
Author(s):  
M. Bortz ◽  
F. S. Ohuchi

AbstractInterfacial reactions between either copper or titanium and cordierite-based (2MgO.2Al2O3.5SiO2) ceramic substrates are probed using X-ray Photoelectron Spectroscopy (XPS). Room temperature reactions are found to be strongly dependent on interfacial chemistry; while copper reacts weakly with the cordierite surface, titanium strongly reduces the Si-O and Al-O substrate bonds. Behavior during subsequent “in situ” annealing is dependent on substrate morphology. On amorphous cordierite films copper remains nonreactive while titanium dissociates remaining Si-O and Al-O bonds, forming a low valency Ti1+ oxide. On crystalline cordierite substrates copper diffuses rapidly upon annealing while titanium reduces substrate bonds forming a high valency Ti3+ oxide. Furthermore, thin 5Å Ti interlayers prevent copper diffusion at temperatures below 650°C. This study represents the first comprehensive treatment of the interfacial reactions in metal-multicomponent ceramic systems.


1994 ◽  
Vol 78 (3) ◽  
pp. 219-231 ◽  
Author(s):  
C. Hinnen ◽  
D. Imbert ◽  
J.M. Siffre ◽  
P. Marcus

1990 ◽  
Vol 206 ◽  
Author(s):  
B.-Y. Yang ◽  
T. Gu ◽  
R.Q. Yu ◽  
J.S. Lannin ◽  
R.W. Collins

ABSTRACTThe evolution of the nanostructure of a-Ge sputter-deposited onto naturally oxidized c-Si and disordered carbon substrates is characterized by in situ ellipsometry, with the focus of attention being on the initial stage when clusters are in evidence. The structural data deduced from ellipsometry are reproducible, are a sensitive function of the preparation parameters, and are also consistent with data deduced from less sensitive Auger electron spectroscopy. The information provided by ellipsometry is of critical importance in studying the effects of average size on the electronic and vibrational properties of clusters by ultraviolet photoelectron spectroscopy and Raman spectroscopy. Other structural probes of clusters for this system, including transmission electron microscopy, have failed to yield reliable results due to the small cluster size.


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